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Substrate orientation: a way towards higher quality monolayer graphene growth on 6H-SiC(0001)

Virojanadara, C.; Yakimova, R.; Osiecki, J.R.; Syväjärvi, M.; Uhrberg, R.I.G.; Johansson, L.I. and Zakharov, Alexei LU (2009) In Surface Science 603(15). p.87-90
Abstract
The influence of substrate orientation on the morphology of graphene growth on 6H-SiC(0 0 0 1) was investigated using low-energy electron and scanning tunneling microscopy (LEEM and STM). Large area monolayer graphene was successfully furnace-grown on these substrates. Larger terrace widths and smaller step heights were obtained on substrates with a smaller mis-orientation from on-axis (0.03°) than on those with a larger (0.25°). Two different types of a carbon atom networks, honeycomb and three-for-six arrangement, were atomically resolved in the graphene monolayer. These findings are of relevance for various potential applications based on graphene–SiC structures.
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Surface Science
volume
603
issue
15
pages
87 - 90
publisher
Elsevier
external identifiers
  • wos:000268371000001
  • scopus:67649354231
ISSN
0039-6028
DOI
10.1016/j.susc.2009.05.005
language
English
LU publication?
yes
id
6ece5bbb-befa-400c-9235-a465c0cb3d35 (old id 1457634)
date added to LUP
2009-08-31 08:43:36
date last changed
2017-12-10 04:23:52
@article{6ece5bbb-befa-400c-9235-a465c0cb3d35,
  abstract     = {The influence of substrate orientation on the morphology of graphene growth on 6H-SiC(0 0 0 1) was investigated using low-energy electron and scanning tunneling microscopy (LEEM and STM). Large area monolayer graphene was successfully furnace-grown on these substrates. Larger terrace widths and smaller step heights were obtained on substrates with a smaller mis-orientation from on-axis (0.03°) than on those with a larger (0.25°). Two different types of a carbon atom networks, honeycomb and three-for-six arrangement, were atomically resolved in the graphene monolayer. These findings are of relevance for various potential applications based on graphene–SiC structures.},
  author       = {Virojanadara, C. and Yakimova, R. and Osiecki, J.R. and Syväjärvi, M. and Uhrberg, R.I.G. and Johansson, L.I. and Zakharov, Alexei},
  issn         = {0039-6028},
  language     = {eng},
  number       = {15},
  pages        = {87--90},
  publisher    = {Elsevier},
  series       = {Surface Science},
  title        = {Substrate orientation: a way towards higher quality monolayer graphene growth on 6H-SiC(0001)},
  url          = {http://dx.doi.org/10.1016/j.susc.2009.05.005},
  volume       = {603},
  year         = {2009},
}