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Deposition of HfO2 on InAs by atomic-layer deposition

Wheeler, D. ; Wernersson, Lars-Erik LU ; Fröberg, Linus LU ; Thelander, Claes LU ; Mikkelsen, Anders LU ; Weststrate, K. -J. ; Sonnet, A. ; Vogel, E. M. and Seabaugh, A. (2009) 16th Biennial Conference on Insulating Films on Semiconductors 86(7-9). p.1561-1563
Abstract
Metal-oxide-semiconductor (MOS) capacitors are formed on bulk InAs substrates by atomic-layer deposition (ALD) of HfO2. Prior to film growth, InAs substrates receive a wet-chemical treatment of HCl, buffered HF (BHF), or (NH4)(2)S. Hafnium dioxide films are grown using 75 ALD cycles with substrate temperatures of 100, 200, and 300 degrees C. Substrate temperature is found to have a significant influence on the current-voltage (I-V) and capacitance-voltage (C-V) characteristics of the capacitors, while the influence of substrate pretreatment manifests itself in interface trap density, D-it, as measured by the Terman method. (C) 2009 Elsevier B.V. All rights reserved.
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author
; ; ; ; ; ; ; and
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
keywords
Atomic-layer deposition, III-V Metal-oxide-semiconductor, Hafnium dioxide, Indium arsenide
host publication
Microelectronic Engineering
volume
86
issue
7-9
pages
1561 - 1563
publisher
Elsevier
conference name
16th Biennial Conference on Insulating Films on Semiconductors
conference dates
2009-06-28 - 2009-07-07
external identifiers
  • wos:000267460100010
  • scopus:67349131254
ISSN
0167-9317
1873-5568
DOI
10.1016/j.mee.2009.03.091
language
English
LU publication?
yes
id
eef99317-e325-4ea1-bf10-8d03ae0e43f4 (old id 1463015)
date added to LUP
2016-04-01 11:45:14
date last changed
2025-01-14 17:20:03
@inproceedings{eef99317-e325-4ea1-bf10-8d03ae0e43f4,
  abstract     = {{Metal-oxide-semiconductor (MOS) capacitors are formed on bulk InAs substrates by atomic-layer deposition (ALD) of HfO2. Prior to film growth, InAs substrates receive a wet-chemical treatment of HCl, buffered HF (BHF), or (NH4)(2)S. Hafnium dioxide films are grown using 75 ALD cycles with substrate temperatures of 100, 200, and 300 degrees C. Substrate temperature is found to have a significant influence on the current-voltage (I-V) and capacitance-voltage (C-V) characteristics of the capacitors, while the influence of substrate pretreatment manifests itself in interface trap density, D-it, as measured by the Terman method. (C) 2009 Elsevier B.V. All rights reserved.}},
  author       = {{Wheeler, D. and Wernersson, Lars-Erik and Fröberg, Linus and Thelander, Claes and Mikkelsen, Anders and Weststrate, K. -J. and Sonnet, A. and Vogel, E. M. and Seabaugh, A.}},
  booktitle    = {{Microelectronic Engineering}},
  issn         = {{0167-9317}},
  keywords     = {{Atomic-layer deposition; III-V Metal-oxide-semiconductor; Hafnium dioxide; Indium arsenide}},
  language     = {{eng}},
  number       = {{7-9}},
  pages        = {{1561--1563}},
  publisher    = {{Elsevier}},
  title        = {{Deposition of HfO2 on InAs by atomic-layer deposition}},
  url          = {{http://dx.doi.org/10.1016/j.mee.2009.03.091}},
  doi          = {{10.1016/j.mee.2009.03.091}},
  volume       = {{86}},
  year         = {{2009}},
}