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Temperature dependence of GaSb overgrowth of tungsten on GaSb (001) substrates using MOVPE

Astromskas, Gvidas LU ; Borg, Mattias LU ; Caroff, Philippe LU and Wernersson, Lars-Erik (2008) 20th International Conference on Indium Phosphide and Related Materials In 20th International Conference on Indium Phosphide and Related Materials, 2008. IPRM 2008 p.354-356
Abstract
We demonstrate GaSb overgrowth over tungsten patterns and that selective area epitaxy is achievable in the W/GaSb system. By controlling the facet growth at low temperatures, it is possible to embed a metal grating in a thin layer.
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
keywords
tungsten, overgrowth, lateral growth, SAE, GaSb
in
20th International Conference on Indium Phosphide and Related Materials, 2008. IPRM 2008
pages
354 - 356
publisher
IEEE--Institute of Electrical and Electronics Engineers Inc.
conference name
20th International Conference on Indium Phosphide and Related Materials
external identifiers
  • wos:000267695700099
  • scopus:70149098540
ISSN
1092-8669
DOI
10.1109/ICIPRM.2008.4702990
language
English
LU publication?
yes
id
a0fad89e-b6d4-49cf-8438-ce56722af915 (old id 1463536)
date added to LUP
2009-08-18 09:19:26
date last changed
2017-01-01 05:33:50
@inproceedings{a0fad89e-b6d4-49cf-8438-ce56722af915,
  abstract     = {We demonstrate GaSb overgrowth over tungsten patterns and that selective area epitaxy is achievable in the W/GaSb system. By controlling the facet growth at low temperatures, it is possible to embed a metal grating in a thin layer.},
  author       = {Astromskas, Gvidas and Borg, Mattias and Caroff, Philippe and Wernersson, Lars-Erik},
  booktitle    = {20th International Conference on Indium Phosphide and Related Materials, 2008. IPRM 2008},
  issn         = {1092-8669},
  keyword      = {tungsten,overgrowth,lateral growth,SAE,GaSb},
  language     = {eng},
  pages        = {354--356},
  publisher    = {IEEE--Institute of Electrical and Electronics Engineers Inc.},
  title        = {Temperature dependence of GaSb overgrowth of tungsten on GaSb (001) substrates using MOVPE},
  url          = {http://dx.doi.org/10.1109/ICIPRM.2008.4702990},
  year         = {2008},
}