Temperature dependence of GaSb overgrowth of tungsten on GaSb (001) substrates using MOVPE
(2008) 20th International Conference on Indium Phosphide and Related Materials p.354-356- Abstract
- We demonstrate GaSb overgrowth over tungsten patterns and that selective area epitaxy is achievable in the W/GaSb system. By controlling the facet growth at low temperatures, it is possible to embed a metal grating in a thin layer.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/1463536
- author
- Astromskas, Gvidas
LU
; Borg, Mattias
LU
; Caroff, Philippe LU and Wernersson, Lars-Erik
- organization
- publishing date
- 2008
- type
- Chapter in Book/Report/Conference proceeding
- publication status
- published
- subject
- keywords
- tungsten, overgrowth, lateral growth, SAE, GaSb
- host publication
- 20th International Conference on Indium Phosphide and Related Materials, 2008. IPRM 2008
- pages
- 354 - 356
- publisher
- IEEE - Institute of Electrical and Electronics Engineers Inc.
- conference name
- 20th International Conference on Indium Phosphide and Related Materials
- conference location
- Versailles, France
- conference dates
- 2008-05-25 - 2008-05-29
- external identifiers
-
- wos:000267695700099
- scopus:70149098540
- ISSN
- 1092-8669
- DOI
- 10.1109/ICIPRM.2008.4702990
- language
- English
- LU publication?
- yes
- id
- a0fad89e-b6d4-49cf-8438-ce56722af915 (old id 1463536)
- date added to LUP
- 2016-04-01 13:15:33
- date last changed
- 2022-01-27 18:13:12
@inproceedings{a0fad89e-b6d4-49cf-8438-ce56722af915, abstract = {{We demonstrate GaSb overgrowth over tungsten patterns and that selective area epitaxy is achievable in the W/GaSb system. By controlling the facet growth at low temperatures, it is possible to embed a metal grating in a thin layer.}}, author = {{Astromskas, Gvidas and Borg, Mattias and Caroff, Philippe and Wernersson, Lars-Erik}}, booktitle = {{20th International Conference on Indium Phosphide and Related Materials, 2008. IPRM 2008}}, issn = {{1092-8669}}, keywords = {{tungsten; overgrowth; lateral growth; SAE; GaSb}}, language = {{eng}}, pages = {{354--356}}, publisher = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}}, title = {{Temperature dependence of GaSb overgrowth of tungsten on GaSb (001) substrates using MOVPE}}, url = {{https://lup.lub.lu.se/search/files/3262219/1731333.pdf}}, doi = {{10.1109/ICIPRM.2008.4702990}}, year = {{2008}}, }