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Probing Strain in Bent Semiconductor Nanowires with Raman Spectroscopy.

Chen, Jianing LU ; Conache, Gabriela LU ; Pistol, Mats-Erik LU ; Gray, Struan LU ; Borgström, Magnus LU ; Xu, Hongxing LU ; Xu, Hongqi LU ; Samuelson, Lars LU and Håkanson, Ulf LU (2010) In Nano Letters 10(4). p.1280-1286
Abstract
We present a noninvasive optical method to determine the local strain in individual semiconductor nanowires. InP nanowires were intentionally bent with an atomic force microscope and variations in the optical phonon frequency along the wires were mapped using Raman spectroscopy. Sections of the nanowires with a high curvature showed significantly broadened phonon lines. These observations together with deformation potential theory show that compressive and tensile strain inside the nanowires is the physical origin of the observed phonon energy variations.
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Nano Letters
volume
10
issue
4
pages
1280 - 1286
publisher
The American Chemical Society
external identifiers
  • wos:000276557100033
  • pmid:20192231
  • scopus:77951072178
ISSN
1530-6992
DOI
10.1021/nl904040y
language
English
LU publication?
yes
id
f4fb5e87-212a-4638-bb8e-bf2d50dfb377 (old id 1582742)
date added to LUP
2010-04-09 12:19:32
date last changed
2018-05-29 09:44:49
@article{f4fb5e87-212a-4638-bb8e-bf2d50dfb377,
  abstract     = {We present a noninvasive optical method to determine the local strain in individual semiconductor nanowires. InP nanowires were intentionally bent with an atomic force microscope and variations in the optical phonon frequency along the wires were mapped using Raman spectroscopy. Sections of the nanowires with a high curvature showed significantly broadened phonon lines. These observations together with deformation potential theory show that compressive and tensile strain inside the nanowires is the physical origin of the observed phonon energy variations.},
  author       = {Chen, Jianing and Conache, Gabriela and Pistol, Mats-Erik and Gray, Struan and Borgström, Magnus and Xu, Hongxing and Xu, Hongqi and Samuelson, Lars and Håkanson, Ulf},
  issn         = {1530-6992},
  language     = {eng},
  number       = {4},
  pages        = {1280--1286},
  publisher    = {The American Chemical Society},
  series       = {Nano Letters},
  title        = {Probing Strain in Bent Semiconductor Nanowires with Raman Spectroscopy.},
  url          = {http://dx.doi.org/10.1021/nl904040y},
  volume       = {10},
  year         = {2010},
}