Probing Strain in Bent Semiconductor Nanowires with Raman Spectroscopy.
Chen, Jianing LU ; Conache, Gabriela LU ; Pistol, Mats-Erik LU ; Gray, Struan LU ; Borgström, Magnus LU
; Xu, Hongxing
LU
; Xu, Hongqi
LU
; Samuelson, Lars
LU
and Håkanson, Ulf
LU
(2010)
In Nano Letters
10(4).
p.1280-1286
- Abstract
- We present a noninvasive optical method to determine the local strain in individual semiconductor nanowires. InP nanowires were intentionally bent with an atomic force microscope and variations in the optical phonon frequency along the wires were mapped using Raman spectroscopy. Sections of the nanowires with a high curvature showed significantly broadened phonon lines. These observations together with deformation potential theory show that compressive and tensile strain inside the nanowires is the physical origin of the observed phonon energy variations.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/1582742
- author
- Chen, Jianing
LU
; Conache, Gabriela
LU
; Pistol, Mats-Erik
LU
; Gray, Struan
LU
; Borgström, Magnus
LU
; Xu, Hongxing
LU
; Xu, Hongqi
LU
; Samuelson, Lars
LU
and Håkanson, Ulf
LU
- organization
- publishing date
- 2010
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Nano Letters
- volume
- 10
- issue
- 4
- pages
- 1280 - 1286
- publisher
- The American Chemical Society (ACS)
- external identifiers
-
- wos:000276557100033
- pmid:20192231
- scopus:77951072178
- pmid:20192231
- ISSN
- 1530-6992
- DOI
- 10.1021/nl904040y
- language
- English
- LU publication?
- yes
- id
- f4fb5e87-212a-4638-bb8e-bf2d50dfb377 (old id 1582742)
- date added to LUP
- 2016-04-01 14:26:38
- date last changed
- 2024-10-10 17:00:33
@article{f4fb5e87-212a-4638-bb8e-bf2d50dfb377,
abstract = {{We present a noninvasive optical method to determine the local strain in individual semiconductor nanowires. InP nanowires were intentionally bent with an atomic force microscope and variations in the optical phonon frequency along the wires were mapped using Raman spectroscopy. Sections of the nanowires with a high curvature showed significantly broadened phonon lines. These observations together with deformation potential theory show that compressive and tensile strain inside the nanowires is the physical origin of the observed phonon energy variations.}},
author = {{Chen, Jianing and Conache, Gabriela and Pistol, Mats-Erik and Gray, Struan and Borgström, Magnus and Xu, Hongxing and Xu, Hongqi and Samuelson, Lars and Håkanson, Ulf}},
issn = {{1530-6992}},
language = {{eng}},
number = {{4}},
pages = {{1280--1286}},
publisher = {{The American Chemical Society (ACS)}},
series = {{Nano Letters}},
title = {{Probing Strain in Bent Semiconductor Nanowires with Raman Spectroscopy.}},
url = {{http://dx.doi.org/10.1021/nl904040y}},
doi = {{10.1021/nl904040y}},
volume = {{10}},
year = {{2010}},
}