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InAs film grown on Si(111) by Metalorganic Vapor Phase Epitaxy

Caroff, Philippe LU ; Borg, Mattias LU ; Wheeler, D.; Keplinger, M.; Mandl, Bernhard LU ; Stangl, J.; Seabaugh, A.; Bauer, G. and Wernersson, Lars-Erik LU (2008) 17th International Vacuum Congress/13th International Conference on Surface Science/Internatinal Conference on Nanoscience and Technology In Journal of Physics: Conference Series 100. p.042017-042017
Abstract
We report the successful growth of high quality InAs films directly on Si( 111) by Metal Organic Vapor Phase Epitaxy. A nearly mirror-like and uniform InAs film is obtained at 580 C for a thickness of 2 mu m. We measured a high value of the electron mobility of 5100 cm(2)/Vs at room temperature. The growth is performed using a standard two-step procedure. The influence of the nucleation layer, group V flow rate, and layer thickness on the electrical and morphological properties of the InAs film have been investigated. We present results of our studies by Atomic Force Microscopy, Scanning Electron Microscopy, electrical Hall/van der Pauw and structural X-Ray Diffraction characterization.
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author
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
in
Journal of Physics: Conference Series
volume
100
pages
042017 - 042017
publisher
IOP Publishing
conference name
17th International Vacuum Congress/13th International Conference on Surface Science/Internatinal Conference on Nanoscience and Technology
external identifiers
  • wos:000275655200065
  • scopus:77954346639
ISSN
1742-6588
1742-6596
DOI
10.1088/1742-6596/100/4/042017
language
English
LU publication?
yes
id
d8cf8d08-c6c6-4196-aaa0-0727976fef93 (old id 1586299)
date added to LUP
2010-04-28 08:57:12
date last changed
2017-08-06 03:51:57
@inproceedings{d8cf8d08-c6c6-4196-aaa0-0727976fef93,
  abstract     = {We report the successful growth of high quality InAs films directly on Si( 111) by Metal Organic Vapor Phase Epitaxy. A nearly mirror-like and uniform InAs film is obtained at 580 C for a thickness of 2 mu m. We measured a high value of the electron mobility of 5100 cm(2)/Vs at room temperature. The growth is performed using a standard two-step procedure. The influence of the nucleation layer, group V flow rate, and layer thickness on the electrical and morphological properties of the InAs film have been investigated. We present results of our studies by Atomic Force Microscopy, Scanning Electron Microscopy, electrical Hall/van der Pauw and structural X-Ray Diffraction characterization.},
  author       = {Caroff, Philippe and Borg, Mattias and Wheeler, D. and Keplinger, M. and Mandl, Bernhard and Stangl, J. and Seabaugh, A. and Bauer, G. and Wernersson, Lars-Erik},
  booktitle    = {Journal of Physics: Conference Series},
  issn         = {1742-6588},
  language     = {eng},
  pages        = {042017--042017},
  publisher    = {IOP Publishing},
  title        = {InAs film grown on Si(111) by Metalorganic Vapor Phase Epitaxy},
  url          = {http://dx.doi.org/10.1088/1742-6596/100/4/042017},
  volume       = {100},
  year         = {2008},
}