InAs film grown on Si(111) by Metalorganic Vapor Phase Epitaxy
Caroff, Philippe LU ; Borg, Mattias LU
; Wheeler, D.
; Keplinger, M.
; Mandl, Bernhard
LU
; Stangl, J.
; Seabaugh, A.
; Bauer, G.
and Wernersson, Lars-Erik
LU
(2008)
17th International Vacuum Congress/13th International Conference on Surface Science/Internatinal Conference on Nanoscience and Technology
100.
p.042017-042017
- Abstract
- We report the successful growth of high quality InAs films directly on Si( 111) by Metal Organic Vapor Phase Epitaxy. A nearly mirror-like and uniform InAs film is obtained at 580 C for a thickness of 2 mu m. We measured a high value of the electron mobility of 5100 cm(2)/Vs at room temperature. The growth is performed using a standard two-step procedure. The influence of the nucleation layer, group V flow rate, and layer thickness on the electrical and morphological properties of the InAs film have been investigated. We present results of our studies by Atomic Force Microscopy, Scanning Electron Microscopy, electrical Hall/van der Pauw and structural X-Ray Diffraction characterization.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/1586299
- author
- Caroff, Philippe
LU
; Borg, Mattias
LU
; Wheeler, D.
; Keplinger, M.
; Mandl, Bernhard
LU
; Stangl, J.
; Seabaugh, A.
; Bauer, G.
and Wernersson, Lars-Erik
LU
- organization
- publishing date
- 2008
- type
- Chapter in Book/Report/Conference proceeding
- publication status
- published
- subject
- host publication
- Journal of Physics: Conference Series
- volume
- 100
- pages
- 042017 - 042017
- publisher
- IOP Publishing
- conference name
- 17th International Vacuum Congress/13th International Conference on Surface Science/Internatinal Conference on Nanoscience and Technology
- conference location
- Stockholm, Sweden
- conference dates
- 2007-07-02 - 2007-07-06
- external identifiers
-
- wos:000275655200065
- scopus:77954346639
- ISSN
- 1742-6596
- 1742-6588
- DOI
- 10.1088/1742-6596/100/4/042017
- language
- English
- LU publication?
- yes
- id
- d8cf8d08-c6c6-4196-aaa0-0727976fef93 (old id 1586299)
- date added to LUP
- 2016-04-01 12:37:48
- date last changed
- 2025-01-03 00:48:57
@inproceedings{d8cf8d08-c6c6-4196-aaa0-0727976fef93,
abstract = {{We report the successful growth of high quality InAs films directly on Si( 111) by Metal Organic Vapor Phase Epitaxy. A nearly mirror-like and uniform InAs film is obtained at 580 C for a thickness of 2 mu m. We measured a high value of the electron mobility of 5100 cm(2)/Vs at room temperature. The growth is performed using a standard two-step procedure. The influence of the nucleation layer, group V flow rate, and layer thickness on the electrical and morphological properties of the InAs film have been investigated. We present results of our studies by Atomic Force Microscopy, Scanning Electron Microscopy, electrical Hall/van der Pauw and structural X-Ray Diffraction characterization.}},
author = {{Caroff, Philippe and Borg, Mattias and Wheeler, D. and Keplinger, M. and Mandl, Bernhard and Stangl, J. and Seabaugh, A. and Bauer, G. and Wernersson, Lars-Erik}},
booktitle = {{Journal of Physics: Conference Series}},
issn = {{1742-6596}},
language = {{eng}},
pages = {{042017--042017}},
publisher = {{IOP Publishing}},
title = {{InAs film grown on Si(111) by Metalorganic Vapor Phase Epitaxy}},
url = {{http://dx.doi.org/10.1088/1742-6596/100/4/042017}},
doi = {{10.1088/1742-6596/100/4/042017}},
volume = {{100}},
year = {{2008}},
}