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Heterogeneous integration of InAs on W/GaAs by MOVPE

Astromskas, Gvidas LU and Wernersson, Lars-Erik LU (2008) 17th International Vacuum Congress/13th International Conference on Surface Science/Internatinal Conference on Nanoscience and Technology 100. p.042043-042043
Abstract
InAs has been grown on W-GaAs patterned substrates using MOVPE. The selectivity of the growth and the nucleation process has been studied as a function of the temperature and the V/III-ratio in the MOVPE reactor. It is shown that the W guides the nucleation of the InAs on the GaAs and that the islands formed may be used to embed metal features in a hybride InAs/GaAs structure in agreement with previous overgrowth studies of W-InAs and W-GaAs. The electrical properties has also been evaluated demonstrating a reduction of resistance by a factor 5 for a hybride structure with an embedded grating as compared to an InAs/GaAs reference sample.
Please use this url to cite or link to this publication:
author
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organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
host publication
Journal of Physics: Conference Series
volume
100
pages
042043 - 042043
publisher
IOP Publishing
conference name
17th International Vacuum Congress/13th International Conference on Surface Science/Internatinal Conference on Nanoscience and Technology
conference location
Stockholm, Sweden
conference dates
2007-07-02 - 2007-07-06
external identifiers
  • wos:000275655200091
  • scopus:77954316813
ISSN
1742-6588
1742-6596
DOI
10.1088/1742-6596/100/4/042043
language
English
LU publication?
yes
id
97e6337b-8033-4aac-af5e-9aff36d8a026 (old id 1586310)
date added to LUP
2016-04-01 11:34:18
date last changed
2025-01-14 10:41:59
@inproceedings{97e6337b-8033-4aac-af5e-9aff36d8a026,
  abstract     = {{InAs has been grown on W-GaAs patterned substrates using MOVPE. The selectivity of the growth and the nucleation process has been studied as a function of the temperature and the V/III-ratio in the MOVPE reactor. It is shown that the W guides the nucleation of the InAs on the GaAs and that the islands formed may be used to embed metal features in a hybride InAs/GaAs structure in agreement with previous overgrowth studies of W-InAs and W-GaAs. The electrical properties has also been evaluated demonstrating a reduction of resistance by a factor 5 for a hybride structure with an embedded grating as compared to an InAs/GaAs reference sample.}},
  author       = {{Astromskas, Gvidas and Wernersson, Lars-Erik}},
  booktitle    = {{Journal of Physics: Conference Series}},
  issn         = {{1742-6588}},
  language     = {{eng}},
  pages        = {{042043--042043}},
  publisher    = {{IOP Publishing}},
  title        = {{Heterogeneous integration of InAs on W/GaAs by MOVPE}},
  url          = {{https://lup.lub.lu.se/search/files/2546520/1731339.PDF}},
  doi          = {{10.1088/1742-6596/100/4/042043}},
  volume       = {{100}},
  year         = {{2008}},
}