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Heterogeneous integration of InAs on W/GaAs by MOVPE

Astromskas, Gvidas LU and Wernersson, Lars-Erik LU (2008) 17th International Vacuum Congress/13th International Conference on Surface Science/Internatinal Conference on Nanoscience and Technology In Journal of Physics: Conference Series 100. p.042043-042043
Abstract
InAs has been grown on W-GaAs patterned substrates using MOVPE. The selectivity of the growth and the nucleation process has been studied as a function of the temperature and the V/III-ratio in the MOVPE reactor. It is shown that the W guides the nucleation of the InAs on the GaAs and that the islands formed may be used to embed metal features in a hybride InAs/GaAs structure in agreement with previous overgrowth studies of W-InAs and W-GaAs. The electrical properties has also been evaluated demonstrating a reduction of resistance by a factor 5 for a hybride structure with an embedded grating as compared to an InAs/GaAs reference sample.
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author
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
in
Journal of Physics: Conference Series
volume
100
pages
042043 - 042043
publisher
IOP Publishing
conference name
17th International Vacuum Congress/13th International Conference on Surface Science/Internatinal Conference on Nanoscience and Technology
external identifiers
  • wos:000275655200091
  • scopus:77954316813
ISSN
1742-6588
1742-6596
DOI
10.1088/1742-6596/100/4/042043
language
English
LU publication?
yes
id
97e6337b-8033-4aac-af5e-9aff36d8a026 (old id 1586310)
date added to LUP
2010-04-28 09:08:17
date last changed
2017-01-01 04:20:31
@inproceedings{97e6337b-8033-4aac-af5e-9aff36d8a026,
  abstract     = {InAs has been grown on W-GaAs patterned substrates using MOVPE. The selectivity of the growth and the nucleation process has been studied as a function of the temperature and the V/III-ratio in the MOVPE reactor. It is shown that the W guides the nucleation of the InAs on the GaAs and that the islands formed may be used to embed metal features in a hybride InAs/GaAs structure in agreement with previous overgrowth studies of W-InAs and W-GaAs. The electrical properties has also been evaluated demonstrating a reduction of resistance by a factor 5 for a hybride structure with an embedded grating as compared to an InAs/GaAs reference sample.},
  author       = {Astromskas, Gvidas and Wernersson, Lars-Erik},
  booktitle    = {Journal of Physics: Conference Series},
  issn         = {1742-6588},
  language     = {eng},
  pages        = {042043--042043},
  publisher    = {IOP Publishing},
  title        = {Heterogeneous integration of InAs on W/GaAs by MOVPE},
  url          = {http://dx.doi.org/10.1088/1742-6596/100/4/042043},
  volume       = {100},
  year         = {2008},
}