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The electrical and structural properties of n-type InAs nanowires grown from metal-organic precursors.

Thelander, Claes LU ; Dick Thelander, Kimberly LU ; Borgström, Magnus LU ; Fröberg, Linus LU ; Caroff, Philippe LU ; Nilsson, Henrik LU and Samuelson, Lars LU (2010) In Nanotechnology 21(20).
Abstract
The electrical and structural properties of 111B-oriented InAs nanowires grown using metal-organic precursors have been studied. On the basis of electrical measurements it was found that the trends in carbon incorporation are similar to those observed in the layer growth, where an increased As/In precursor ratio and growth temperature result in a decrease in carbon-related impurities. Our results also show that the effect of non-intentional carbon doping is weaker in InAs nanowires compared to bulk, which may be explained by lower carbon incorporation in the nanowire core. We determine that differences in crystal quality, here quantified as the stacking fault density, are not the primary cause for variations in resistivity of the material... (More)
The electrical and structural properties of 111B-oriented InAs nanowires grown using metal-organic precursors have been studied. On the basis of electrical measurements it was found that the trends in carbon incorporation are similar to those observed in the layer growth, where an increased As/In precursor ratio and growth temperature result in a decrease in carbon-related impurities. Our results also show that the effect of non-intentional carbon doping is weaker in InAs nanowires compared to bulk, which may be explained by lower carbon incorporation in the nanowire core. We determine that differences in crystal quality, here quantified as the stacking fault density, are not the primary cause for variations in resistivity of the material studied. The effects of some n-dopant precursors (S, Se, Si, Sn) on InAs nanowire morphology, crystal structure and resistivity were also investigated. All precursors result in n-doped nanowires, but high precursor flows of Si and Sn also lead to enhanced radial overgrowth. Use of the Se precursor increases the stacking fault density in wurtzite nanowires, ultimately at high flows leading to a zinc blende crystal structure with strong overgrowth and very low resistivity. (Less)
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author
organization
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type
Contribution to journal
publication status
published
subject
in
Nanotechnology
volume
21
issue
20
publisher
IOP Publishing
external identifiers
  • wos:000277214900018
  • pmid:20413840
  • scopus:77951605008
ISSN
0957-4484
DOI
10.1088/0957-4484/21/20/205703
language
English
LU publication?
yes
id
91be3a24-73e9-4733-9d9e-9ac2154a23a7 (old id 1594859)
date added to LUP
2010-05-05 13:54:33
date last changed
2018-06-17 03:41:59
@article{91be3a24-73e9-4733-9d9e-9ac2154a23a7,
  abstract     = {The electrical and structural properties of 111B-oriented InAs nanowires grown using metal-organic precursors have been studied. On the basis of electrical measurements it was found that the trends in carbon incorporation are similar to those observed in the layer growth, where an increased As/In precursor ratio and growth temperature result in a decrease in carbon-related impurities. Our results also show that the effect of non-intentional carbon doping is weaker in InAs nanowires compared to bulk, which may be explained by lower carbon incorporation in the nanowire core. We determine that differences in crystal quality, here quantified as the stacking fault density, are not the primary cause for variations in resistivity of the material studied. The effects of some n-dopant precursors (S, Se, Si, Sn) on InAs nanowire morphology, crystal structure and resistivity were also investigated. All precursors result in n-doped nanowires, but high precursor flows of Si and Sn also lead to enhanced radial overgrowth. Use of the Se precursor increases the stacking fault density in wurtzite nanowires, ultimately at high flows leading to a zinc blende crystal structure with strong overgrowth and very low resistivity.},
  articleno    = {205703},
  author       = {Thelander, Claes and Dick Thelander, Kimberly and Borgström, Magnus and Fröberg, Linus and Caroff, Philippe and Nilsson, Henrik and Samuelson, Lars},
  issn         = {0957-4484},
  language     = {eng},
  number       = {20},
  publisher    = {IOP Publishing},
  series       = {Nanotechnology},
  title        = {The electrical and structural properties of n-type InAs nanowires grown from metal-organic precursors.},
  url          = {http://dx.doi.org/10.1088/0957-4484/21/20/205703},
  volume       = {21},
  year         = {2010},
}