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Temperature dependent properties of InSb and InAs nanowire field-effect transistors

Nilsson, Henrik LU ; Caroff, Philippe LU ; Thelander, Claes LU ; Lind, Erik LU ; Karlström, Olov LU and Wernersson, Lars-Erik LU (2010) In Applied Physics Letters 96(15).
Abstract
We present temperature dependent electrical measurements on InSb and InAs nanowire field-effect transistors (FETs). The FETs are fabricated from InAs/InSb heterostructure nanowires, where one complete transistor is defined within each of the two segments. Both the InSb and the InAs FETs are n-type with good current saturation and low voltage operation. The off-current for the InSb FET shows a strong temperature dependence, which we attribute to a barrier lowering due to an increased band-to-band tunneling in the drain part of the channel.
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
field effect transistors, nanowires
in
Applied Physics Letters
volume
96
issue
15
publisher
American Institute of Physics
external identifiers
  • wos:000276794100075
  • scopus:77951614503
ISSN
0003-6951
DOI
10.1063/1.3402760
language
English
LU publication?
yes
id
4b8e75fe-1407-4ce5-8df9-e731071949dc (old id 1603317)
date added to LUP
2010-05-17 15:10:02
date last changed
2018-06-17 03:05:11
@article{4b8e75fe-1407-4ce5-8df9-e731071949dc,
  abstract     = {We present temperature dependent electrical measurements on InSb and InAs nanowire field-effect transistors (FETs). The FETs are fabricated from InAs/InSb heterostructure nanowires, where one complete transistor is defined within each of the two segments. Both the InSb and the InAs FETs are n-type with good current saturation and low voltage operation. The off-current for the InSb FET shows a strong temperature dependence, which we attribute to a barrier lowering due to an increased band-to-band tunneling in the drain part of the channel.},
  author       = {Nilsson, Henrik and Caroff, Philippe and Thelander, Claes and Lind, Erik and Karlström, Olov and Wernersson, Lars-Erik},
  issn         = {0003-6951},
  keyword      = {field effect transistors,nanowires},
  language     = {eng},
  number       = {15},
  publisher    = {American Institute of Physics},
  series       = {Applied Physics Letters},
  title        = {Temperature dependent properties of InSb and InAs nanowire field-effect transistors},
  url          = {http://dx.doi.org/10.1063/1.3402760},
  volume       = {96},
  year         = {2010},
}