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InAs/GaSb Heterostructure Nanowires for Tunnel Field-Effect Transistors.

Borg, Mattias LU ; Dick Thelander, Kimberly LU ; Ganjipour, Bahram LU ; Pistol, Mats-Erik LU ; Wernersson, Lars-Erik LU and Thelander, Claes LU (2010) In Nano Letters 10(Online August 24, 2010). p.4080-4085
Abstract
InAs/GaSb nanowire heterostructures with thin GaInAs inserts were grown by MOVPE and characterized by electrical measurements and transmission electron microscopy. Down-scaling of the insert thickness was limited because of an observed sensitivity of GaSb nanowire growth to the presence of In. By employing growth interrupts in between the InAs and GaInAs growth steps it was possible to reach an insert thickness down to 25 nm. Two-terminal devices show a diode behavior, where temperature-dependent measurements indicate a heterostructure barrier height of 0.5 eV, which is identified as the valence band offset between the InAs and GaSb. Three-terminal transistor structures with a top-gate positioned at the heterointerface show clear... (More)
InAs/GaSb nanowire heterostructures with thin GaInAs inserts were grown by MOVPE and characterized by electrical measurements and transmission electron microscopy. Down-scaling of the insert thickness was limited because of an observed sensitivity of GaSb nanowire growth to the presence of In. By employing growth interrupts in between the InAs and GaInAs growth steps it was possible to reach an insert thickness down to 25 nm. Two-terminal devices show a diode behavior, where temperature-dependent measurements indicate a heterostructure barrier height of 0.5 eV, which is identified as the valence band offset between the InAs and GaSb. Three-terminal transistor structures with a top-gate positioned at the heterointerface show clear indications of band-to-band tunnelling. (Less)
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Nano Letters
volume
10
issue
Online August 24, 2010
pages
4080 - 4085
publisher
The American Chemical Society
external identifiers
  • wos:000282727600047
  • pmid:20735074
  • scopus:77958055794
ISSN
1530-6992
DOI
10.1021/nl102145h
language
English
LU publication?
yes
id
ac62a6eb-e486-4db9-a6f8-0af5c2813dd4 (old id 1665053)
date added to LUP
2010-09-07 15:48:14
date last changed
2018-07-15 03:42:11
@article{ac62a6eb-e486-4db9-a6f8-0af5c2813dd4,
  abstract     = {InAs/GaSb nanowire heterostructures with thin GaInAs inserts were grown by MOVPE and characterized by electrical measurements and transmission electron microscopy. Down-scaling of the insert thickness was limited because of an observed sensitivity of GaSb nanowire growth to the presence of In. By employing growth interrupts in between the InAs and GaInAs growth steps it was possible to reach an insert thickness down to 25 nm. Two-terminal devices show a diode behavior, where temperature-dependent measurements indicate a heterostructure barrier height of 0.5 eV, which is identified as the valence band offset between the InAs and GaSb. Three-terminal transistor structures with a top-gate positioned at the heterointerface show clear indications of band-to-band tunnelling.},
  author       = {Borg, Mattias and Dick Thelander, Kimberly and Ganjipour, Bahram and Pistol, Mats-Erik and Wernersson, Lars-Erik and Thelander, Claes},
  issn         = {1530-6992},
  language     = {eng},
  number       = {Online August 24, 2010},
  pages        = {4080--4085},
  publisher    = {The American Chemical Society},
  series       = {Nano Letters},
  title        = {InAs/GaSb Heterostructure Nanowires for Tunnel Field-Effect Transistors.},
  url          = {http://dx.doi.org/10.1021/nl102145h},
  volume       = {10},
  year         = {2010},
}