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Determination of diffusion lengths in nanowires using cathodoluminescence

Gustafsson, Anders LU ; Bolinsson, Jessica LU ; Sköld, Niklas LU and Samuelson, Lars LU (2010) In Applied Physics Letters 97(7).
Abstract
We used cathodoluminescence imaging to determine diffusion lengths in III-V semiconductor nanowires, grown by metal-organic chemical vapor deposition seeded by gold nanoparticles. Intensity profiles were recorded either from the interface between the substrate and homogeneous nanowires, or from segments in nanowires containing axial heterostructures to determine the diffusion length. We determined diffusion lengths of 0.10 to 0.90 mu m, the shortest for uncapped wires. The reduction is attributed largely to surface recombination. (C) 2010 American Institute of Physics. [doi:10.1063/1.3473829]
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
quantum wires, semiconductor, semiconductor heterojunctions, semiconductor growth, nanowires, nanoparticles, MOCVD, III-V semiconductors, gold, gallium arsenide, diffusion, aluminium compounds, cathodoluminescence, surface recombination
in
Applied Physics Letters
volume
97
issue
7
publisher
American Institute of Physics
external identifiers
  • wos:000281153600045
  • scopus:77956028067
ISSN
0003-6951
DOI
10.1063/1.3473829
language
English
LU publication?
yes
id
50ca13ce-ef65-47e0-9072-82ed7739e74b (old id 1673452)
date added to LUP
2010-09-23 10:43:37
date last changed
2018-06-10 03:25:05
@article{50ca13ce-ef65-47e0-9072-82ed7739e74b,
  abstract     = {We used cathodoluminescence imaging to determine diffusion lengths in III-V semiconductor nanowires, grown by metal-organic chemical vapor deposition seeded by gold nanoparticles. Intensity profiles were recorded either from the interface between the substrate and homogeneous nanowires, or from segments in nanowires containing axial heterostructures to determine the diffusion length. We determined diffusion lengths of 0.10 to 0.90 mu m, the shortest for uncapped wires. The reduction is attributed largely to surface recombination. (C) 2010 American Institute of Physics. [doi:10.1063/1.3473829]},
  articleno    = {072114},
  author       = {Gustafsson, Anders and Bolinsson, Jessica and Sköld, Niklas and Samuelson, Lars},
  issn         = {0003-6951},
  keyword      = {quantum wires,semiconductor,semiconductor heterojunctions,semiconductor growth,nanowires,nanoparticles,MOCVD,III-V semiconductors,gold,gallium arsenide,diffusion,aluminium compounds,cathodoluminescence,surface recombination},
  language     = {eng},
  number       = {7},
  publisher    = {American Institute of Physics},
  series       = {Applied Physics Letters},
  title        = {Determination of diffusion lengths in nanowires using cathodoluminescence},
  url          = {http://dx.doi.org/10.1063/1.3473829},
  volume       = {97},
  year         = {2010},
}