Determination of diffusion lengths in nanowires using cathodoluminescence
Gustafsson, Anders LU
; Bolinsson, Jessica
LU
; Sköld, Niklas
LU
and Samuelson, Lars
LU
(2010)
In Applied Physics Letters
97(7).
- Abstract
- We used cathodoluminescence imaging to determine diffusion lengths in III-V semiconductor nanowires, grown by metal-organic chemical vapor deposition seeded by gold nanoparticles. Intensity profiles were recorded either from the interface between the substrate and homogeneous nanowires, or from segments in nanowires containing axial heterostructures to determine the diffusion length. We determined diffusion lengths of 0.10 to 0.90 mu m, the shortest for uncapped wires. The reduction is attributed largely to surface recombination. (C) 2010 American Institute of Physics. [doi:10.1063/1.3473829]
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/1673452
- author
- Gustafsson, Anders
LU
; Bolinsson, Jessica
LU
; Sköld, Niklas
LU
and Samuelson, Lars
LU
- organization
- publishing date
- 2010
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- quantum wires, semiconductor, semiconductor heterojunctions, semiconductor growth, nanowires, nanoparticles, MOCVD, III-V semiconductors, gold, gallium arsenide, diffusion, aluminium compounds, cathodoluminescence, surface recombination
- in
- Applied Physics Letters
- volume
- 97
- issue
- 7
- article number
- 072114
- publisher
- American Institute of Physics (AIP)
- external identifiers
-
- wos:000281153600045
- scopus:77956028067
- ISSN
- 0003-6951
- DOI
- 10.1063/1.3473829
- language
- English
- LU publication?
- yes
- id
- 50ca13ce-ef65-47e0-9072-82ed7739e74b (old id 1673452)
- date added to LUP
- 2016-04-01 10:47:02
- date last changed
- 2023-11-10 05:21:44
@article{50ca13ce-ef65-47e0-9072-82ed7739e74b,
abstract = {{We used cathodoluminescence imaging to determine diffusion lengths in III-V semiconductor nanowires, grown by metal-organic chemical vapor deposition seeded by gold nanoparticles. Intensity profiles were recorded either from the interface between the substrate and homogeneous nanowires, or from segments in nanowires containing axial heterostructures to determine the diffusion length. We determined diffusion lengths of 0.10 to 0.90 mu m, the shortest for uncapped wires. The reduction is attributed largely to surface recombination. (C) 2010 American Institute of Physics. [doi:10.1063/1.3473829]}},
author = {{Gustafsson, Anders and Bolinsson, Jessica and Sköld, Niklas and Samuelson, Lars}},
issn = {{0003-6951}},
keywords = {{quantum wires; semiconductor; semiconductor heterojunctions; semiconductor growth; nanowires; nanoparticles; MOCVD; III-V semiconductors; gold; gallium arsenide; diffusion; aluminium compounds; cathodoluminescence; surface recombination}},
language = {{eng}},
number = {{7}},
publisher = {{American Institute of Physics (AIP)}},
series = {{Applied Physics Letters}},
title = {{Determination of diffusion lengths in nanowires using cathodoluminescence}},
url = {{http://dx.doi.org/10.1063/1.3473829}},
doi = {{10.1063/1.3473829}},
volume = {{97}},
year = {{2010}},
}