Doping Incorporation in InAs nanowires characterized by capacitance measurements
Astromskas, Gvidas LU ; Storm, Kristian LU ; Karlström, Olov LU ; Caroff, Philippe LU ; Borgström, Magnus LU
and Wernersson, Lars-Erik
LU
(2010)
In Journal of Applied Physics
108.
- Abstract
- Sn and Se doped InAs nanowires are characterized using a capacitance-voltage technique where the threshold voltages of nanowire capacitors with different diameter are determined and analyzed using an improved radial metal-insulator-semiconductor field-effect transistor model. This allows for a separation of doping in the core of the nanowire from the surface charge at the side facets of the nanowire. The data show that the doping level in the InAs nanowire can be controlled on the level between 2×1018 to 1×1019 cm−3, while the surface charge density exceeds 5×1012 cm−2 and is shown to increase with higher dopant precursor molar fraction.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/1712477
- author
- Astromskas, Gvidas
LU
; Storm, Kristian
LU
; Karlström, Olov
LU
; Caroff, Philippe
LU
; Borgström, Magnus
LU
and Wernersson, Lars-Erik
LU
- organization
- publishing date
- 2010
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- III-V semiconductors, MISFET, nanowires, semiconductor doping
- in
- Journal of Applied Physics
- volume
- 108
- article number
- 054306
- publisher
- American Institute of Physics (AIP)
- external identifiers
-
- wos:000282478900086
- scopus:77956823969
- ISSN
- 0021-8979
- DOI
- 10.1063/1.3475356
- language
- English
- LU publication?
- yes
- id
- 33da4179-8da7-4ce5-961a-eb4731ecc903 (old id 1712477)
- alternative location
- http://jap.aip.org/resource/1/japiau/v108/i5/p054306_s1
- date added to LUP
- 2016-04-01 11:11:52
- date last changed
- 2024-09-09 18:39:05
@article{33da4179-8da7-4ce5-961a-eb4731ecc903,
abstract = {{Sn and Se doped InAs nanowires are characterized using a capacitance-voltage technique where the threshold voltages of nanowire capacitors with different diameter are determined and analyzed using an improved radial metal-insulator-semiconductor field-effect transistor model. This allows for a separation of doping in the core of the nanowire from the surface charge at the side facets of the nanowire. The data show that the doping level in the InAs nanowire can be controlled on the level between 2×1018 to 1×1019 cm−3, while the surface charge density exceeds 5×1012 cm−2 and is shown to increase with higher dopant precursor molar fraction.}},
author = {{Astromskas, Gvidas and Storm, Kristian and Karlström, Olov and Caroff, Philippe and Borgström, Magnus and Wernersson, Lars-Erik}},
issn = {{0021-8979}},
keywords = {{III-V semiconductors; MISFET; nanowires; semiconductor doping}},
language = {{eng}},
publisher = {{American Institute of Physics (AIP)}},
series = {{Journal of Applied Physics}},
title = {{Doping Incorporation in InAs nanowires characterized by capacitance measurements}},
url = {{https://lup.lub.lu.se/search/files/2461739/1712502.PDF}},
doi = {{10.1063/1.3475356}},
volume = {{108}},
year = {{2010}},
}