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Doping Incorporation in InAs nanowires characterized by capacitance measurements

Astromskas, Gvidas LU ; Storm, Kristian LU ; Karlström, Olov LU ; Caroff, Philippe LU ; Borgström, Magnus LU and Wernersson, Lars-Erik LU (2010) In Applied Physics Reviews 108.
Abstract
Sn and Se doped InAs nanowires are characterized using a capacitance-voltage technique where the threshold voltages of nanowire capacitors with different diameter are determined and analyzed using an improved radial metal-insulator-semiconductor field-effect transistor model. This allows for a separation of doping in the core of the nanowire from the surface charge at the side facets of the nanowire. The data show that the doping level in the InAs nanowire can be controlled on the level between 2×1018 to 1×1019 cm−3, while the surface charge density exceeds 5×1012 cm−2 and is shown to increase with higher dopant precursor molar fraction.
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
III-V semiconductors, MISFET, nanowires, semiconductor doping
in
Applied Physics Reviews
volume
108
publisher
American Institute of Physics
external identifiers
  • wos:000282478900086
  • scopus:77956823969
ISSN
0021-8979
DOI
10.1063/1.3475356
language
English
LU publication?
yes
id
33da4179-8da7-4ce5-961a-eb4731ecc903 (old id 1712477)
alternative location
http://jap.aip.org/resource/1/japiau/v108/i5/p054306_s1
date added to LUP
2010-11-03 11:37:00
date last changed
2018-05-29 10:49:39
@article{33da4179-8da7-4ce5-961a-eb4731ecc903,
  abstract     = {Sn and Se doped InAs nanowires are characterized using a capacitance-voltage technique where the threshold voltages of nanowire capacitors with different diameter are determined and analyzed using an improved radial metal-insulator-semiconductor field-effect transistor model. This allows for a separation of doping in the core of the nanowire from the surface charge at the side facets of the nanowire. The data show that the doping level in the InAs nanowire can be controlled on the level between 2×1018 to 1×1019 cm−3, while the surface charge density exceeds 5×1012 cm−2 and is shown to increase with higher dopant precursor molar fraction.},
  articleno    = {054306},
  author       = {Astromskas, Gvidas and Storm, Kristian and Karlström, Olov and Caroff, Philippe and Borgström, Magnus and Wernersson, Lars-Erik},
  issn         = {0021-8979},
  keyword      = {III-V semiconductors,MISFET,nanowires,semiconductor doping},
  language     = {eng},
  publisher    = {American Institute of Physics},
  series       = {Applied Physics Reviews},
  title        = {Doping Incorporation in InAs nanowires characterized by capacitance measurements},
  url          = {http://dx.doi.org/10.1063/1.3475356},
  volume       = {108},
  year         = {2010},
}