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III-V Nanowires-Extending a Narrowing Road

Wernersson, Lars-Erik LU ; Thelander, Claes LU ; Lind, Erik LU and Samuelson, Lars LU (2010) In Proceedings of the IEEE 98(12). p.2047-2060
Abstract
Semiconductor nanowires have attracted considerable attention during the last decade and are considered as an alternative path to extend the road for scaled semiconductor devices. The interest is motivated by the improved electrostatic control in the cylindrical geometry and the possibility to utilize heterostructures in transistor design. Currently, nanowire transistors have been realized both in III-Vs and in group IV materials employing top-down as well as bottom-up technologies. In this review, we give an overview of the field and, in particular, we summarize state-of-the-art for III-V nanowire devices. It is demonstrated that the growth and processing technologies are maturing and that devices with good transistor characteristics are... (More)
Semiconductor nanowires have attracted considerable attention during the last decade and are considered as an alternative path to extend the road for scaled semiconductor devices. The interest is motivated by the improved electrostatic control in the cylindrical geometry and the possibility to utilize heterostructures in transistor design. Currently, nanowire transistors have been realized both in III-Vs and in group IV materials employing top-down as well as bottom-up technologies. In this review, we give an overview of the field and, in particular, we summarize state-of-the-art for III-V nanowire devices. It is demonstrated that the growth and processing technologies are maturing and that devices with good transistor characteristics are being fabricated by a combined bottom-up and top-down approach. Also, the first radio-frequency (RF)-implementations are reviewed and discussed. (Less)
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
nanowire field-effect transistors (FETs), nanotechnology, Complementary metal-oxide-semiconductor (CMOS), III-V, metal-oxide-semiconductor field-effect transistors (MOSFETs)
in
Proceedings of the IEEE
volume
98
issue
12
pages
2047 - 2060
publisher
IEEE--Institute of Electrical and Electronics Engineers Inc.
external identifiers
  • wos:000284410800007
  • scopus:78649997061
ISSN
0018-9219
DOI
10.1109/JPROC.2010.2065211
language
English
LU publication?
yes
id
f7c7cd6d-010a-40fb-b6c5-d58a5c4a038e (old id 1751614)
date added to LUP
2010-12-29 13:19:58
date last changed
2018-06-03 04:12:21
@article{f7c7cd6d-010a-40fb-b6c5-d58a5c4a038e,
  abstract     = {Semiconductor nanowires have attracted considerable attention during the last decade and are considered as an alternative path to extend the road for scaled semiconductor devices. The interest is motivated by the improved electrostatic control in the cylindrical geometry and the possibility to utilize heterostructures in transistor design. Currently, nanowire transistors have been realized both in III-Vs and in group IV materials employing top-down as well as bottom-up technologies. In this review, we give an overview of the field and, in particular, we summarize state-of-the-art for III-V nanowire devices. It is demonstrated that the growth and processing technologies are maturing and that devices with good transistor characteristics are being fabricated by a combined bottom-up and top-down approach. Also, the first radio-frequency (RF)-implementations are reviewed and discussed.},
  author       = {Wernersson, Lars-Erik and Thelander, Claes and Lind, Erik and Samuelson, Lars},
  issn         = {0018-9219},
  keyword      = {nanowire field-effect transistors (FETs),nanotechnology,Complementary metal-oxide-semiconductor (CMOS),III-V,metal-oxide-semiconductor field-effect transistors (MOSFETs)},
  language     = {eng},
  number       = {12},
  pages        = {2047--2060},
  publisher    = {IEEE--Institute of Electrical and Electronics Engineers Inc.},
  series       = {Proceedings of the IEEE},
  title        = {III-V Nanowires-Extending a Narrowing Road},
  url          = {http://dx.doi.org/10.1109/JPROC.2010.2065211},
  volume       = {98},
  year         = {2010},
}