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Transient studies on InAs/HfO2 nanowire capacitors

Astromskas, Gvidas LU ; Storm, Kristian LU and Wernersson, Lars-Erik LU (2011) In Applied Physics Letters 98(1).
Abstract
Single-shot transients and deep-level transient spectroscopy are used to investigate the origins of capacitance hysteresis in n-doped InAs nanowire/HfO2 capacitors. Capacitance transients with a characteristic time in the order of 100 mu s are attributed to emission from electron traps, located in the oxide film. The trap energy is determined to be in the range from 0.12 to 0.17 eV with capture cross-sections of about 1.7 x 10(-17) cm(-2). The capture is measured to be shorter than 100 ns with no sign of capture barrier. Under the reverse bias, the transients show a reduced emission rate indicating a minority carrier assisted complex dynamics. (C) 2011 American Institute of Physics. [doi:10.1063/1.3533379]
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Applied Physics Letters
volume
98
issue
1
publisher
American Institute of Physics
external identifiers
  • wos:000286009800077
  • scopus:78651325889
ISSN
0003-6951
DOI
10.1063/1.3533379
language
English
LU publication?
yes
id
e4010eff-8000-4a9d-a4c4-dcc19826831d (old id 1790859)
date added to LUP
2011-03-02 14:36:43
date last changed
2017-01-08 03:37:36
@article{e4010eff-8000-4a9d-a4c4-dcc19826831d,
  abstract     = {Single-shot transients and deep-level transient spectroscopy are used to investigate the origins of capacitance hysteresis in n-doped InAs nanowire/HfO2 capacitors. Capacitance transients with a characteristic time in the order of 100 mu s are attributed to emission from electron traps, located in the oxide film. The trap energy is determined to be in the range from 0.12 to 0.17 eV with capture cross-sections of about 1.7 x 10(-17) cm(-2). The capture is measured to be shorter than 100 ns with no sign of capture barrier. Under the reverse bias, the transients show a reduced emission rate indicating a minority carrier assisted complex dynamics. (C) 2011 American Institute of Physics. [doi:10.1063/1.3533379]},
  articleno    = {013501},
  author       = {Astromskas, Gvidas and Storm, Kristian and Wernersson, Lars-Erik},
  issn         = {0003-6951},
  language     = {eng},
  number       = {1},
  publisher    = {American Institute of Physics},
  series       = {Applied Physics Letters},
  title        = {Transient studies on InAs/HfO2 nanowire capacitors},
  url          = {http://dx.doi.org/10.1063/1.3533379},
  volume       = {98},
  year         = {2011},
}