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Transient studies on InAs/HfO2 nanowire capacitors

Astromskas, Gvidas LU ; Storm, Kristian LU and Wernersson, Lars-Erik LU (2011) In Applied Physics Letters 98(1).
Abstract
Single-shot transients and deep-level transient spectroscopy are used to investigate the origins of capacitance hysteresis in n-doped InAs nanowire/HfO2 capacitors. Capacitance transients with a characteristic time in the order of 100 mu s are attributed to emission from electron traps, located in the oxide film. The trap energy is determined to be in the range from 0.12 to 0.17 eV with capture cross-sections of about 1.7 x 10(-17) cm(-2). The capture is measured to be shorter than 100 ns with no sign of capture barrier. Under the reverse bias, the transients show a reduced emission rate indicating a minority carrier assisted complex dynamics. (C) 2011 American Institute of Physics. [doi:10.1063/1.3533379]
Please use this url to cite or link to this publication:
author
; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Applied Physics Letters
volume
98
issue
1
article number
013501
publisher
American Institute of Physics (AIP)
external identifiers
  • wos:000286009800077
  • scopus:78651325889
ISSN
0003-6951
DOI
10.1063/1.3533379
language
English
LU publication?
yes
id
e4010eff-8000-4a9d-a4c4-dcc19826831d (old id 1790859)
date added to LUP
2016-04-01 11:05:19
date last changed
2023-08-31 18:20:49
@article{e4010eff-8000-4a9d-a4c4-dcc19826831d,
  abstract     = {{Single-shot transients and deep-level transient spectroscopy are used to investigate the origins of capacitance hysteresis in n-doped InAs nanowire/HfO2 capacitors. Capacitance transients with a characteristic time in the order of 100 mu s are attributed to emission from electron traps, located in the oxide film. The trap energy is determined to be in the range from 0.12 to 0.17 eV with capture cross-sections of about 1.7 x 10(-17) cm(-2). The capture is measured to be shorter than 100 ns with no sign of capture barrier. Under the reverse bias, the transients show a reduced emission rate indicating a minority carrier assisted complex dynamics. (C) 2011 American Institute of Physics. [doi:10.1063/1.3533379]}},
  author       = {{Astromskas, Gvidas and Storm, Kristian and Wernersson, Lars-Erik}},
  issn         = {{0003-6951}},
  language     = {{eng}},
  number       = {{1}},
  publisher    = {{American Institute of Physics (AIP)}},
  series       = {{Applied Physics Letters}},
  title        = {{Transient studies on InAs/HfO2 nanowire capacitors}},
  url          = {{http://dx.doi.org/10.1063/1.3533379}},
  doi          = {{10.1063/1.3533379}},
  volume       = {{98}},
  year         = {{2011}},
}