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Epitaxial InP nanowire growth from Cu seed particles

Hillerich, Karla LU ; Messing, Maria LU ; Wallenberg, Reine LU ; Deppert, Knut LU and Dick Thelander, Kimberly LU (2011) 15th international conference on metal organic vapor phase epitaxy, 2010 In Journal of Crystal Growth 315(1). p.134-137
Abstract
Cu-seeded epitaxial growth of vertically aligned InP nanowires is reported for the first time. The nanowires were grown at temperatures between 290 and 420 degrees C by metal-organic vapor phase epitaxy (MOVPE) from particles formed from Cu thin films. In the temperature range of 340-370 degrees C high yields of vertically aligned nanowires could be achieved. The nanowire crystal structure and the particle composition were investigated by TEM and XEDS. The nanowires showed a zinc blende structure and a post-growth particle composition of 64 at% Cu and 36 at% In. (C) 2010 Elsevier B.V. All rights reserved.
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author
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
keywords
Nanostructures, Nanowires, Low-pressure metal-organic vapor phase, epitaxy, Semiconducting III-V materials, Semiconducting indium phosphide
in
Journal of Crystal Growth
volume
315
issue
1
pages
134 - 137
publisher
Elsevier
conference name
15th international conference on metal organic vapor phase epitaxy, 2010
external identifiers
  • wos:000287558400030
  • scopus:79551683157
ISSN
0022-0248
DOI
10.1016/j.jcrysgro.2010.08.016
language
English
LU publication?
yes
id
577b0e2c-eabf-4211-80e5-315eec8f06b3 (old id 1872768)
date added to LUP
2011-04-26 11:09:39
date last changed
2017-01-01 05:56:42
@inproceedings{577b0e2c-eabf-4211-80e5-315eec8f06b3,
  abstract     = {Cu-seeded epitaxial growth of vertically aligned InP nanowires is reported for the first time. The nanowires were grown at temperatures between 290 and 420 degrees C by metal-organic vapor phase epitaxy (MOVPE) from particles formed from Cu thin films. In the temperature range of 340-370 degrees C high yields of vertically aligned nanowires could be achieved. The nanowire crystal structure and the particle composition were investigated by TEM and XEDS. The nanowires showed a zinc blende structure and a post-growth particle composition of 64 at% Cu and 36 at% In. (C) 2010 Elsevier B.V. All rights reserved.},
  author       = {Hillerich, Karla and Messing, Maria and Wallenberg, Reine and Deppert, Knut and Dick Thelander, Kimberly},
  booktitle    = {Journal of Crystal Growth},
  issn         = {0022-0248},
  keyword      = {Nanostructures,Nanowires,Low-pressure metal-organic vapor phase,epitaxy,Semiconducting III-V materials,Semiconducting indium phosphide},
  language     = {eng},
  number       = {1},
  pages        = {134--137},
  publisher    = {Elsevier},
  title        = {Epitaxial InP nanowire growth from Cu seed particles},
  url          = {http://dx.doi.org/10.1016/j.jcrysgro.2010.08.016},
  volume       = {315},
  year         = {2011},
}