Advanced

Dynamics of extremely anisotropic etching of InP nanowires by HCl

Borgström, Magnus LU ; Wallentin, Jesper LU ; Kawaguchi, Kenichi; Samuelson, Lars LU and Deppert, Knut LU (2011) In Chemical Physics Letters 502(4-6). p.222-224
Abstract
We report on the dynamics of in situ etching of nanowires using an etching agent which allows for parameter optimization for nanowire synthesis without concerns of tapering issues. Upon etching of InP nanowires using HCl it is found that HCl mainly reacts with the precursor TMI, its decomposition species, and physisorbed In. The reaction with solid InP is less rapid and diffusion limited. We find a gas-phase etch process which is metal assisted and has a high aspect ratio of 1:100. (C) 2011 Elsevier B.V. All rights reserved.
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Chemical Physics Letters
volume
502
issue
4-6
pages
222 - 224
publisher
Elsevier
external identifiers
  • wos:000286417800018
  • scopus:78751649016
ISSN
0009-2614
DOI
10.1016/j.cplett.2010.12.061
language
English
LU publication?
yes
id
77e7b5a1-860e-49f0-975d-9272b8606294 (old id 1882662)
date added to LUP
2011-03-30 11:26:19
date last changed
2017-01-15 04:05:10
@article{77e7b5a1-860e-49f0-975d-9272b8606294,
  abstract     = {We report on the dynamics of in situ etching of nanowires using an etching agent which allows for parameter optimization for nanowire synthesis without concerns of tapering issues. Upon etching of InP nanowires using HCl it is found that HCl mainly reacts with the precursor TMI, its decomposition species, and physisorbed In. The reaction with solid InP is less rapid and diffusion limited. We find a gas-phase etch process which is metal assisted and has a high aspect ratio of 1:100. (C) 2011 Elsevier B.V. All rights reserved.},
  author       = {Borgström, Magnus and Wallentin, Jesper and Kawaguchi, Kenichi and Samuelson, Lars and Deppert, Knut},
  issn         = {0009-2614},
  language     = {eng},
  number       = {4-6},
  pages        = {222--224},
  publisher    = {Elsevier},
  series       = {Chemical Physics Letters},
  title        = {Dynamics of extremely anisotropic etching of InP nanowires by HCl},
  url          = {http://dx.doi.org/10.1016/j.cplett.2010.12.061},
  volume       = {502},
  year         = {2011},
}