Enhanced Sb incorporation in InAsSb nanowires grown by metalorganic vapor phase epitaxy
Borg, Mattias LU
; Dick Thelander, Kimberly
LU
; Eymery, Joel
and Wernersson, Lars-Erik
LU
(2011)
In Applied Physics Letters
98(11).
- Abstract
- We demonstrate metalorganic vapor phase epitaxy of InAs1-xSbx nanowires (x=0.08-0.77) for applications in high-speed electronics and long-wavelength optical devices. The composition of the InAsSb nanowires and InAsSb epilayers on the same sample is independently determined using lab-setup high resolution x-ray diffraction, by making use of the size-dependent in-plane broadening of the nanowire Bragg peak. We find that the incorporation of Sb into the nanowires is significantly higher than for planar epitaxy under the same growth conditions. Thermodynamic calculations indicate that this is due to a dramatically decreased effective V/III ratio at the particle/nanowire interface. (C) 2011 American Institute of Physics. (C) [doi:... (More)
- We demonstrate metalorganic vapor phase epitaxy of InAs1-xSbx nanowires (x=0.08-0.77) for applications in high-speed electronics and long-wavelength optical devices. The composition of the InAsSb nanowires and InAsSb epilayers on the same sample is independently determined using lab-setup high resolution x-ray diffraction, by making use of the size-dependent in-plane broadening of the nanowire Bragg peak. We find that the incorporation of Sb into the nanowires is significantly higher than for planar epitaxy under the same growth conditions. Thermodynamic calculations indicate that this is due to a dramatically decreased effective V/III ratio at the particle/nanowire interface. (C) 2011 American Institute of Physics. (C) [doi: 10.1063/1.3566980] (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/1926370
- author
- Borg, Mattias
LU
; Dick Thelander, Kimberly
LU
; Eymery, Joel
and Wernersson, Lars-Erik
LU
- organization
- publishing date
- 2011
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Applied Physics Letters
- volume
- 98
- issue
- 11
- article number
- 113104
- publisher
- American Institute of Physics (AIP)
- external identifiers
-
- wos:000288569300049
- scopus:79952918478
- ISSN
- 0003-6951
- DOI
- 10.1063/1.3566980
- language
- English
- LU publication?
- yes
- id
- 643d8c9f-32f8-4363-a157-ce1030dad3a5 (old id 1926370)
- date added to LUP
- 2016-04-01 10:13:23
- date last changed
- 2023-11-09 15:14:35
@article{643d8c9f-32f8-4363-a157-ce1030dad3a5,
abstract = {{We demonstrate metalorganic vapor phase epitaxy of InAs1-xSbx nanowires (x=0.08-0.77) for applications in high-speed electronics and long-wavelength optical devices. The composition of the InAsSb nanowires and InAsSb epilayers on the same sample is independently determined using lab-setup high resolution x-ray diffraction, by making use of the size-dependent in-plane broadening of the nanowire Bragg peak. We find that the incorporation of Sb into the nanowires is significantly higher than for planar epitaxy under the same growth conditions. Thermodynamic calculations indicate that this is due to a dramatically decreased effective V/III ratio at the particle/nanowire interface. (C) 2011 American Institute of Physics. (C) [doi: 10.1063/1.3566980]}},
author = {{Borg, Mattias and Dick Thelander, Kimberly and Eymery, Joel and Wernersson, Lars-Erik}},
issn = {{0003-6951}},
language = {{eng}},
number = {{11}},
publisher = {{American Institute of Physics (AIP)}},
series = {{Applied Physics Letters}},
title = {{Enhanced Sb incorporation in InAsSb nanowires grown by metalorganic vapor phase epitaxy}},
url = {{https://lup.lub.lu.se/search/files/1666964/2187780.pdf}},
doi = {{10.1063/1.3566980}},
volume = {{98}},
year = {{2011}},
}