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Enhanced Sb incorporation in InAsSb nanowires grown by metalorganic vapor phase epitaxy

Borg, Mattias LU ; Dick Thelander, Kimberly LU ; Eymery, Joel and Wernersson, Lars-Erik LU (2011) In Applied Physics Letters 98(11).
Abstract
We demonstrate metalorganic vapor phase epitaxy of InAs1-xSbx nanowires (x=0.08-0.77) for applications in high-speed electronics and long-wavelength optical devices. The composition of the InAsSb nanowires and InAsSb epilayers on the same sample is independently determined using lab-setup high resolution x-ray diffraction, by making use of the size-dependent in-plane broadening of the nanowire Bragg peak. We find that the incorporation of Sb into the nanowires is significantly higher than for planar epitaxy under the same growth conditions. Thermodynamic calculations indicate that this is due to a dramatically decreased effective V/III ratio at the particle/nanowire interface. (C) 2011 American Institute of Physics. (C) [doi:... (More)
We demonstrate metalorganic vapor phase epitaxy of InAs1-xSbx nanowires (x=0.08-0.77) for applications in high-speed electronics and long-wavelength optical devices. The composition of the InAsSb nanowires and InAsSb epilayers on the same sample is independently determined using lab-setup high resolution x-ray diffraction, by making use of the size-dependent in-plane broadening of the nanowire Bragg peak. We find that the incorporation of Sb into the nanowires is significantly higher than for planar epitaxy under the same growth conditions. Thermodynamic calculations indicate that this is due to a dramatically decreased effective V/III ratio at the particle/nanowire interface. (C) 2011 American Institute of Physics. (C) [doi: 10.1063/1.3566980] (Less)
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type
Contribution to journal
publication status
published
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in
Applied Physics Letters
volume
98
issue
11
publisher
American Institute of Physics
external identifiers
  • wos:000288569300049
  • scopus:79952918478
ISSN
0003-6951
DOI
10.1063/1.3566980
language
English
LU publication?
yes
id
643d8c9f-32f8-4363-a157-ce1030dad3a5 (old id 1926370)
date added to LUP
2011-05-10 11:55:59
date last changed
2017-04-16 03:07:44
@article{643d8c9f-32f8-4363-a157-ce1030dad3a5,
  abstract     = {We demonstrate metalorganic vapor phase epitaxy of InAs1-xSbx nanowires (x=0.08-0.77) for applications in high-speed electronics and long-wavelength optical devices. The composition of the InAsSb nanowires and InAsSb epilayers on the same sample is independently determined using lab-setup high resolution x-ray diffraction, by making use of the size-dependent in-plane broadening of the nanowire Bragg peak. We find that the incorporation of Sb into the nanowires is significantly higher than for planar epitaxy under the same growth conditions. Thermodynamic calculations indicate that this is due to a dramatically decreased effective V/III ratio at the particle/nanowire interface. (C) 2011 American Institute of Physics. (C) [doi: 10.1063/1.3566980]},
  articleno    = {113104},
  author       = {Borg, Mattias and Dick Thelander, Kimberly and Eymery, Joel and Wernersson, Lars-Erik},
  issn         = {0003-6951},
  language     = {eng},
  number       = {11},
  publisher    = {American Institute of Physics},
  series       = {Applied Physics Letters},
  title        = {Enhanced Sb incorporation in InAsSb nanowires grown by metalorganic vapor phase epitaxy},
  url          = {http://dx.doi.org/10.1063/1.3566980},
  volume       = {98},
  year         = {2011},
}