Advanced

Oxidized In-containing III-V(100) surfaces: Formation of crystalline oxide films and semiconductor-oxide interfaces

Punkkinen, M. P. J.; Laukkanen, P.; Lang, J.; Kuzmin, M.; Tuominen, M.; Tuominen, V.; Dahl, J.; Pessa, M.; Guina, M. and Kokko, K., et al. (2011) In Physical Review B (Condensed Matter and Materials Physics) 83(19).
Abstract
Previously found oxidized III-V semiconductor surfaces have been generally structurally disordered and useless for applications. We disclose a family of well-ordered oxidized InAs, InGaAs, InP, and InSb surfaces found by experiments. The found epitaxial oxide-III-V interface is insulating and free of defects related to the harmful Fermi-level pinning, which opens up new possibilities to develop long-sought III-V metal-oxide-semiconductor transistors. Calculations reveal that the early stages in the oxidation process include only O-III bonds due to the geometry of the III-V(100)c(8 x 2) substrate, which is responsible for the formation of the ordered interface. The found surfaces provide a different platform to study the oxidation and... (More)
Previously found oxidized III-V semiconductor surfaces have been generally structurally disordered and useless for applications. We disclose a family of well-ordered oxidized InAs, InGaAs, InP, and InSb surfaces found by experiments. The found epitaxial oxide-III-V interface is insulating and free of defects related to the harmful Fermi-level pinning, which opens up new possibilities to develop long-sought III-V metal-oxide-semiconductor transistors. Calculations reveal that the early stages in the oxidation process include only O-III bonds due to the geometry of the III-V(100)c(8 x 2) substrate, which is responsible for the formation of the ordered interface. The found surfaces provide a different platform to study the oxidation and properties of oxides, e. g., the origins of the photoemission shifts and electronic structures, using surface science methods. (Less)
Please use this url to cite or link to this publication:
author
, et al. (More)
(Less)
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Physical Review B (Condensed Matter and Materials Physics)
volume
83
issue
19
publisher
American Physical Society
external identifiers
  • wos:000291089600017
  • scopus:79961122962
ISSN
1098-0121
DOI
10.1103/PhysRevB.83.195329
language
English
LU publication?
yes
id
f5bd9392-ad7c-4808-b8de-52cf8f717371 (old id 1985837)
date added to LUP
2011-07-06 11:54:50
date last changed
2017-04-09 03:59:51
@article{f5bd9392-ad7c-4808-b8de-52cf8f717371,
  abstract     = {Previously found oxidized III-V semiconductor surfaces have been generally structurally disordered and useless for applications. We disclose a family of well-ordered oxidized InAs, InGaAs, InP, and InSb surfaces found by experiments. The found epitaxial oxide-III-V interface is insulating and free of defects related to the harmful Fermi-level pinning, which opens up new possibilities to develop long-sought III-V metal-oxide-semiconductor transistors. Calculations reveal that the early stages in the oxidation process include only O-III bonds due to the geometry of the III-V(100)c(8 x 2) substrate, which is responsible for the formation of the ordered interface. The found surfaces provide a different platform to study the oxidation and properties of oxides, e. g., the origins of the photoemission shifts and electronic structures, using surface science methods.},
  author       = {Punkkinen, M. P. J. and Laukkanen, P. and Lang, J. and Kuzmin, M. and Tuominen, M. and Tuominen, V. and Dahl, J. and Pessa, M. and Guina, M. and Kokko, K. and Sadowski, Janusz and Johansson, B. and Vayrynen, I. J. and Vitos, L.},
  issn         = {1098-0121},
  language     = {eng},
  number       = {19},
  publisher    = {American Physical Society},
  series       = {Physical Review B (Condensed Matter and Materials Physics)},
  title        = {Oxidized In-containing III-V(100) surfaces: Formation of crystalline oxide films and semiconductor-oxide interfaces},
  url          = {http://dx.doi.org/10.1103/PhysRevB.83.195329},
  volume       = {83},
  year         = {2011},
}