Transmission electron microscopy of InP Stranski‐Krastanow islands buried in GaInP
(1995) In Physica Status Solidi (A) Applied Research 150(1). p.479-487- Abstract
- InP islands in a matrix of GaInP are investigated by transmission electron microscopy (TEM). The islands are uniform in size and shape, and are formed though self‐organized Stranski‐Krastanow growth. The introduction of a 4 ML intermediate GaP layer eliminates the bimodal distribution found in films where the InP was grown directly on the GaInP layer. The achieved island density is around 2 × 109 cm−2, and the basal plane of the InP islands is around 40 × 50 nm2. A model is suggested for the shape where the islands are in a truncated pyramidal form, showing {111}, {110}, and (001) facets, with an island height of 10 to 15 nm. A fast and simple specimen preparation method is suggested, based on laser assisted chemical etching.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/19b05edb-0000-4ba6-bd73-96aa11c4cf52
- author
- Georsson, K ; Wallenberg, LR LU ; Seifert, W LU ; Carlsson, N LU ; Lindahl, J LU and Samuelson, L LU
- organization
- publishing date
- 1995-07-16
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Physica Status Solidi (A) Applied Research
- volume
- 150
- issue
- 1
- pages
- 9 pages
- publisher
- John Wiley & Sons Inc.
- external identifiers
-
- scopus:0029346619
- ISSN
- 0031-8965
- DOI
- 10.1002/pssa.2211500142
- language
- English
- LU publication?
- yes
- id
- 19b05edb-0000-4ba6-bd73-96aa11c4cf52
- date added to LUP
- 2023-10-31 15:42:13
- date last changed
- 2023-11-03 08:20:24
@article{19b05edb-0000-4ba6-bd73-96aa11c4cf52, abstract = {{InP islands in a matrix of GaInP are investigated by transmission electron microscopy (TEM). The islands are uniform in size and shape, and are formed though self‐organized Stranski‐Krastanow growth. The introduction of a 4 ML intermediate GaP layer eliminates the bimodal distribution found in films where the InP was grown directly on the GaInP layer. The achieved island density is around 2 × 109 cm−2, and the basal plane of the InP islands is around 40 × 50 nm2. A model is suggested for the shape where the islands are in a truncated pyramidal form, showing {111}, {110}, and (001) facets, with an island height of 10 to 15 nm. A fast and simple specimen preparation method is suggested, based on laser assisted chemical etching.}}, author = {{Georsson, K and Wallenberg, LR and Seifert, W and Carlsson, N and Lindahl, J and Samuelson, L}}, issn = {{0031-8965}}, language = {{eng}}, month = {{07}}, number = {{1}}, pages = {{479--487}}, publisher = {{John Wiley & Sons Inc.}}, series = {{Physica Status Solidi (A) Applied Research}}, title = {{Transmission electron microscopy of InP Stranski‐Krastanow islands buried in GaInP}}, url = {{http://dx.doi.org/10.1002/pssa.2211500142}}, doi = {{10.1002/pssa.2211500142}}, volume = {{150}}, year = {{1995}}, }