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Transmission electron microscopy of InP Stranski‐Krastanow islands buried in GaInP

Georsson, K ; Wallenberg, LR LU ; Seifert, W LU ; Carlsson, N LU ; Lindahl, J LU and Samuelson, L LU (1995) In Physica Status Solidi (A) Applied Research 150(1). p.479-487
Abstract
InP islands in a matrix of GaInP are investigated by transmission electron microscopy (TEM). The islands are uniform in size and shape, and are formed though self‐organized Stranski‐Krastanow growth. The introduction of a 4 ML intermediate GaP layer eliminates the bimodal distribution found in films where the InP was grown directly on the GaInP layer. The achieved island density is around 2 × 109 cm−2, and the basal plane of the InP islands is around 40 × 50 nm2. A model is suggested for the shape where the islands are in a truncated pyramidal form, showing {111}, {110}, and (001) facets, with an island height of 10 to 15 nm. A fast and simple specimen preparation method is suggested, based on laser assisted chemical etching.
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author
; ; ; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Physica Status Solidi (A) Applied Research
volume
150
issue
1
pages
9 pages
publisher
Wiley-VCH Verlag
external identifiers
  • scopus:0029346619
ISSN
0031-8965
DOI
10.1002/pssa.2211500142
language
English
LU publication?
yes
id
19b05edb-0000-4ba6-bd73-96aa11c4cf52
date added to LUP
2023-10-31 15:42:13
date last changed
2025-10-14 10:25:45
@article{19b05edb-0000-4ba6-bd73-96aa11c4cf52,
  abstract     = {{InP islands in a matrix of GaInP are investigated by transmission electron microscopy (TEM). The islands are uniform in size and shape, and are formed though self‐organized Stranski‐Krastanow growth. The introduction of a 4 ML intermediate GaP layer eliminates the bimodal distribution found in films where the InP was grown directly on the GaInP layer. The achieved island density is around 2 × 109 cm−2, and the basal plane of the InP islands is around 40 × 50 nm2. A model is suggested for the shape where the islands are in a truncated pyramidal form, showing {111}, {110}, and (001) facets, with an island height of 10 to 15 nm. A fast and simple specimen preparation method is suggested, based on laser assisted chemical etching.}},
  author       = {{Georsson, K and Wallenberg, LR and Seifert, W and Carlsson, N and Lindahl, J and Samuelson, L}},
  issn         = {{0031-8965}},
  language     = {{eng}},
  month        = {{07}},
  number       = {{1}},
  pages        = {{479--487}},
  publisher    = {{Wiley-VCH Verlag}},
  series       = {{Physica Status Solidi (A) Applied Research}},
  title        = {{Transmission electron microscopy of InP Stranski‐Krastanow islands buried in GaInP}},
  url          = {{http://dx.doi.org/10.1002/pssa.2211500142}},
  doi          = {{10.1002/pssa.2211500142}},
  volume       = {{150}},
  year         = {{1995}},
}