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Synthesis and Applications of III-V Nanowires

Barrigón, Enrique LU ; Heurlin, Magnus LU ; Bi, Zhaoxia LU ; Monemar, Bo LU and Samuelson, Lars LU (2019) In Chemical Reviews 119(15). p.9170-9220
Abstract

Low-dimensional semiconductor materials structures, where nanowires are needle-like one-dimensional examples, have developed into one of the most intensely studied fields of science and technology. The subarea described in this review is compound semiconductor nanowires, with the materials covered limited to III-V materials (like GaAs, InAs, GaP, InP,...) and III-nitride materials (GaN, InGaN, AlGaN,...). We review the way in which several innovative synthesis methods constitute the basis for the realization of highly controlled nanowires, and we combine this perspective with one of how the different families of nanowires can contribute to applications. One reason for the very intense research in this field is motivated by what they can... (More)

Low-dimensional semiconductor materials structures, where nanowires are needle-like one-dimensional examples, have developed into one of the most intensely studied fields of science and technology. The subarea described in this review is compound semiconductor nanowires, with the materials covered limited to III-V materials (like GaAs, InAs, GaP, InP,...) and III-nitride materials (GaN, InGaN, AlGaN,...). We review the way in which several innovative synthesis methods constitute the basis for the realization of highly controlled nanowires, and we combine this perspective with one of how the different families of nanowires can contribute to applications. One reason for the very intense research in this field is motivated by what they can offer to main-stream semiconductors, by which ultrahigh performing electronic (e.g., transistors) and photonic (e.g., photovoltaics, photodetectors or LEDs) technologies can be merged with silicon and CMOS. Other important aspects, also covered in the review, deals with synthesis methods that can lead to dramatic reduction of cost of fabrication and opportunities for up-scaling to mass production methods.

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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Chemical Reviews
volume
119
issue
15
pages
51 pages
publisher
The American Chemical Society (ACS)
external identifiers
  • pmid:31385696
  • scopus:85070882945
ISSN
0009-2665
DOI
10.1021/acs.chemrev.9b00075
language
English
LU publication?
yes
id
1a079d5a-873a-4972-8d5a-adf2274bfd40
date added to LUP
2019-09-03 14:07:52
date last changed
2019-12-10 08:14:17
@article{1a079d5a-873a-4972-8d5a-adf2274bfd40,
  abstract     = {<p>Low-dimensional semiconductor materials structures, where nanowires are needle-like one-dimensional examples, have developed into one of the most intensely studied fields of science and technology. The subarea described in this review is compound semiconductor nanowires, with the materials covered limited to III-V materials (like GaAs, InAs, GaP, InP,...) and III-nitride materials (GaN, InGaN, AlGaN,...). We review the way in which several innovative synthesis methods constitute the basis for the realization of highly controlled nanowires, and we combine this perspective with one of how the different families of nanowires can contribute to applications. One reason for the very intense research in this field is motivated by what they can offer to main-stream semiconductors, by which ultrahigh performing electronic (e.g., transistors) and photonic (e.g., photovoltaics, photodetectors or LEDs) technologies can be merged with silicon and CMOS. Other important aspects, also covered in the review, deals with synthesis methods that can lead to dramatic reduction of cost of fabrication and opportunities for up-scaling to mass production methods.</p>},
  author       = {Barrigón, Enrique and Heurlin, Magnus and Bi, Zhaoxia and Monemar, Bo and Samuelson, Lars},
  issn         = {0009-2665},
  language     = {eng},
  month        = {08},
  number       = {15},
  pages        = {9170--9220},
  publisher    = {The American Chemical Society (ACS)},
  series       = {Chemical Reviews},
  title        = {Synthesis and Applications of III-V Nanowires},
  url          = {http://dx.doi.org/10.1021/acs.chemrev.9b00075},
  doi          = {10.1021/acs.chemrev.9b00075},
  volume       = {119},
  year         = {2019},
}