Skip to main content

Lund University Publications

LUND UNIVERSITY LIBRARIES

III-V device integration on Si using template-assisted selective epitaxy

Schmid, Heinz ; Borg, Mattias LU orcid ; Moselund, Kirsten ; Gignac, Lynne ; Breslin, Chris ; Bruley, John ; Cutaia, Davide and Riel, Heike (2015) 73rd Annual Device Research Conference, DRC 2015 2015-August. p.255-256
Abstract

High mobility (III-V) materials have long been anticipated to replace Si MOSFETs. But only recently [1] were scaled InAs MOSFETs reported to outperform Si devices. However, high-performing III-V devices are typically fabricated on InP substrates which are not compatible with large-scale chip manufacturing. While various III-V on Si fabrication approaches have been reported to overcome this issue, they either suffer from limited material quality or are economically not competitive compared to Si substrates. Here we demonstrate a versatile approach for heterogeneous integration of III-Vs on Si and validate this by the fabrication of multiple-gate (MuG)-FET devices. The study is complemented by performing TEM analysis, TLM and Hall... (More)

High mobility (III-V) materials have long been anticipated to replace Si MOSFETs. But only recently [1] were scaled InAs MOSFETs reported to outperform Si devices. However, high-performing III-V devices are typically fabricated on InP substrates which are not compatible with large-scale chip manufacturing. While various III-V on Si fabrication approaches have been reported to overcome this issue, they either suffer from limited material quality or are economically not competitive compared to Si substrates. Here we demonstrate a versatile approach for heterogeneous integration of III-Vs on Si and validate this by the fabrication of multiple-gate (MuG)-FET devices. The study is complemented by performing TEM analysis, TLM and Hall measurements.

(Less)
Please use this url to cite or link to this publication:
author
; ; ; ; ; ; and
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
keywords
Epitaxial growth
host publication
Device Research Conference - Conference Digest, DRC
volume
2015-August
article number
7175666
pages
2 pages
publisher
IEEE - Institute of Electrical and Electronics Engineers Inc.
conference name
73rd Annual Device Research Conference, DRC 2015
conference location
Columbus, United States
conference dates
2015-06-21 - 2015-06-24
external identifiers
  • scopus:84957666166
ISBN
9781467381345
DOI
10.1109/DRC.2015.7175666
language
English
LU publication?
no
id
1ac607c6-6cf0-4020-8780-1330c576a656
date added to LUP
2016-04-20 10:28:05
date last changed
2025-10-14 10:35:26
@inproceedings{1ac607c6-6cf0-4020-8780-1330c576a656,
  abstract     = {{<p>High mobility (III-V) materials have long been anticipated to replace Si MOSFETs. But only recently [1] were scaled InAs MOSFETs reported to outperform Si devices. However, high-performing III-V devices are typically fabricated on InP substrates which are not compatible with large-scale chip manufacturing. While various III-V on Si fabrication approaches have been reported to overcome this issue, they either suffer from limited material quality or are economically not competitive compared to Si substrates. Here we demonstrate a versatile approach for heterogeneous integration of III-Vs on Si and validate this by the fabrication of multiple-gate (MuG)-FET devices. The study is complemented by performing TEM analysis, TLM and Hall measurements.</p>}},
  author       = {{Schmid, Heinz and Borg, Mattias and Moselund, Kirsten and Gignac, Lynne and Breslin, Chris and Bruley, John and Cutaia, Davide and Riel, Heike}},
  booktitle    = {{Device Research Conference - Conference Digest, DRC}},
  isbn         = {{9781467381345}},
  keywords     = {{Epitaxial growth}},
  language     = {{eng}},
  month        = {{08}},
  pages        = {{255--256}},
  publisher    = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}},
  title        = {{III-V device integration on Si using template-assisted selective epitaxy}},
  url          = {{http://dx.doi.org/10.1109/DRC.2015.7175666}},
  doi          = {{10.1109/DRC.2015.7175666}},
  volume       = {{2015-August}},
  year         = {{2015}},
}