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Bi ultra-thin crystalline films on InAs(1 1 1)A and B substrates : A combined core-level and valence-band angle-resolved and dichroic photoemission study

Nicolaï, L. ; Mariot, J. M. ; Djukic, U. ; Wang, W. LU orcid ; Heckmann, O. ; Richter, M. C. ; Kanski, J. ; Leandersson, M. LU ; Balasubramanian, T. LU and Sadowski, J. LU , et al. (2019) In New Journal of Physics 21(12).
Abstract

The growth of Bi on both the In-terminated (A) face and the As-terminated (B) face of InAs(1 1 1) has been investigated by low-energy electron diffraction, scanning tunnelling microscopy, and photoelectron spectroscopy using synchrotron radiation. The changes upon Bi deposition of the In 4d and Bi 5d5/2 photoelectron signals allow to get a comprehensive picture of the Bi/InAs(1 1 1) interface. From the early stage the Bi growth on the A face is epitaxial, contrary to that on the B face that proceeds via the formation of islands. Angle-resolved photoelectron spectra show that the electronic structure of a Bi deposit of ≈10 bi-layers on the A face is identical to that of bulk Bi, while more than ≈30 bi-layers are needed for the... (More)

The growth of Bi on both the In-terminated (A) face and the As-terminated (B) face of InAs(1 1 1) has been investigated by low-energy electron diffraction, scanning tunnelling microscopy, and photoelectron spectroscopy using synchrotron radiation. The changes upon Bi deposition of the In 4d and Bi 5d5/2 photoelectron signals allow to get a comprehensive picture of the Bi/InAs(1 1 1) interface. From the early stage the Bi growth on the A face is epitaxial, contrary to that on the B face that proceeds via the formation of islands. Angle-resolved photoelectron spectra show that the electronic structure of a Bi deposit of ≈10 bi-layers on the A face is identical to that of bulk Bi, while more than ≈30 bi-layers are needed for the B face. Both bulk and surface electronic states observed are well accounted for by fully relativistic ab initio calculations performed using the one-step model of photoemission. These calculations are used to analyse the dichroic photoemission data recorded in the vicinity of the Fermi level around the Γ&bar; point of the Brillouin zone.

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type
Contribution to journal
publication status
published
subject
keywords
angle-resolved photoemission, bismuth, circular dichroism, electronic structure calculations, growth, indium arsenide, ultra-thin films
in
New Journal of Physics
volume
21
issue
12
article number
123012
publisher
IOP Publishing
external identifiers
  • scopus:85081627510
ISSN
1367-2630
DOI
10.1088/1367-2630/ab5c14
language
English
LU publication?
yes
id
1cb1b600-352a-4a2a-b0e5-901443887e77
date added to LUP
2020-03-27 12:16:45
date last changed
2022-04-18 21:34:47
@article{1cb1b600-352a-4a2a-b0e5-901443887e77,
  abstract     = {{<p>The growth of Bi on both the In-terminated (A) face and the As-terminated (B) face of InAs(1 1 1) has been investigated by low-energy electron diffraction, scanning tunnelling microscopy, and photoelectron spectroscopy using synchrotron radiation. The changes upon Bi deposition of the In 4d and Bi 5d<sub>5/2</sub> photoelectron signals allow to get a comprehensive picture of the Bi/InAs(1 1 1) interface. From the early stage the Bi growth on the A face is epitaxial, contrary to that on the B face that proceeds via the formation of islands. Angle-resolved photoelectron spectra show that the electronic structure of a Bi deposit of ≈10 bi-layers on the A face is identical to that of bulk Bi, while more than ≈30 bi-layers are needed for the B face. Both bulk and surface electronic states observed are well accounted for by fully relativistic ab initio calculations performed using the one-step model of photoemission. These calculations are used to analyse the dichroic photoemission data recorded in the vicinity of the Fermi level around the Γ&amp;bar; point of the Brillouin zone.</p>}},
  author       = {{Nicolaï, L. and Mariot, J. M. and Djukic, U. and Wang, W. and Heckmann, O. and Richter, M. C. and Kanski, J. and Leandersson, M. and Balasubramanian, T. and Sadowski, J. and Braun, J. and Ebert, H. and Vobornik, I. and Fujii, J. and Minár, J. and Hricovini, K.}},
  issn         = {{1367-2630}},
  keywords     = {{angle-resolved photoemission; bismuth; circular dichroism; electronic structure calculations; growth; indium arsenide; ultra-thin films}},
  language     = {{eng}},
  number       = {{12}},
  publisher    = {{IOP Publishing}},
  series       = {{New Journal of Physics}},
  title        = {{Bi ultra-thin crystalline films on InAs(1 1 1)A and B substrates : A combined core-level and valence-band angle-resolved and dichroic photoemission study}},
  url          = {{http://dx.doi.org/10.1088/1367-2630/ab5c14}},
  doi          = {{10.1088/1367-2630/ab5c14}},
  volume       = {{21}},
  year         = {{2019}},
}