Bi ultra-thin crystalline films on InAs(1 1 1)A and B substrates : A combined core-level and valence-band angle-resolved and dichroic photoemission study
(2019) In New Journal of Physics 21(12).- Abstract
The growth of Bi on both the In-terminated (A) face and the As-terminated (B) face of InAs(1 1 1) has been investigated by low-energy electron diffraction, scanning tunnelling microscopy, and photoelectron spectroscopy using synchrotron radiation. The changes upon Bi deposition of the In 4d and Bi 5d5/2 photoelectron signals allow to get a comprehensive picture of the Bi/InAs(1 1 1) interface. From the early stage the Bi growth on the A face is epitaxial, contrary to that on the B face that proceeds via the formation of islands. Angle-resolved photoelectron spectra show that the electronic structure of a Bi deposit of ≈10 bi-layers on the A face is identical to that of bulk Bi, while more than ≈30 bi-layers are needed for the... (More)
The growth of Bi on both the In-terminated (A) face and the As-terminated (B) face of InAs(1 1 1) has been investigated by low-energy electron diffraction, scanning tunnelling microscopy, and photoelectron spectroscopy using synchrotron radiation. The changes upon Bi deposition of the In 4d and Bi 5d5/2 photoelectron signals allow to get a comprehensive picture of the Bi/InAs(1 1 1) interface. From the early stage the Bi growth on the A face is epitaxial, contrary to that on the B face that proceeds via the formation of islands. Angle-resolved photoelectron spectra show that the electronic structure of a Bi deposit of ≈10 bi-layers on the A face is identical to that of bulk Bi, while more than ≈30 bi-layers are needed for the B face. Both bulk and surface electronic states observed are well accounted for by fully relativistic ab initio calculations performed using the one-step model of photoemission. These calculations are used to analyse the dichroic photoemission data recorded in the vicinity of the Fermi level around the Γ&bar; point of the Brillouin zone.
(Less)
- author
- organization
- publishing date
- 2019
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- angle-resolved photoemission, bismuth, circular dichroism, electronic structure calculations, growth, indium arsenide, ultra-thin films
- in
- New Journal of Physics
- volume
- 21
- issue
- 12
- article number
- 123012
- publisher
- IOP Publishing
- external identifiers
-
- scopus:85081627510
- ISSN
- 1367-2630
- DOI
- 10.1088/1367-2630/ab5c14
- language
- English
- LU publication?
- yes
- id
- 1cb1b600-352a-4a2a-b0e5-901443887e77
- date added to LUP
- 2020-03-27 12:16:45
- date last changed
- 2022-04-18 21:34:47
@article{1cb1b600-352a-4a2a-b0e5-901443887e77, abstract = {{<p>The growth of Bi on both the In-terminated (A) face and the As-terminated (B) face of InAs(1 1 1) has been investigated by low-energy electron diffraction, scanning tunnelling microscopy, and photoelectron spectroscopy using synchrotron radiation. The changes upon Bi deposition of the In 4d and Bi 5d<sub>5/2</sub> photoelectron signals allow to get a comprehensive picture of the Bi/InAs(1 1 1) interface. From the early stage the Bi growth on the A face is epitaxial, contrary to that on the B face that proceeds via the formation of islands. Angle-resolved photoelectron spectra show that the electronic structure of a Bi deposit of ≈10 bi-layers on the A face is identical to that of bulk Bi, while more than ≈30 bi-layers are needed for the B face. Both bulk and surface electronic states observed are well accounted for by fully relativistic ab initio calculations performed using the one-step model of photoemission. These calculations are used to analyse the dichroic photoemission data recorded in the vicinity of the Fermi level around the Γ&bar; point of the Brillouin zone.</p>}}, author = {{Nicolaï, L. and Mariot, J. M. and Djukic, U. and Wang, W. and Heckmann, O. and Richter, M. C. and Kanski, J. and Leandersson, M. and Balasubramanian, T. and Sadowski, J. and Braun, J. and Ebert, H. and Vobornik, I. and Fujii, J. and Minár, J. and Hricovini, K.}}, issn = {{1367-2630}}, keywords = {{angle-resolved photoemission; bismuth; circular dichroism; electronic structure calculations; growth; indium arsenide; ultra-thin films}}, language = {{eng}}, number = {{12}}, publisher = {{IOP Publishing}}, series = {{New Journal of Physics}}, title = {{Bi ultra-thin crystalline films on InAs(1 1 1)A and B substrates : A combined core-level and valence-band angle-resolved and dichroic photoemission study}}, url = {{http://dx.doi.org/10.1088/1367-2630/ab5c14}}, doi = {{10.1088/1367-2630/ab5c14}}, volume = {{21}}, year = {{2019}}, }