A New Route toward Semiconductor Nanospintronics: Highly Mn-Doped GaAs Nanowires Realized by Ion-Implantation under Dynamic Annealing Conditions
(2011) In Nano Letters 11(9). p.3935-3940- Abstract
- We report on highly Mn-doped GaAs nanowires (NWs) of high crystalline quality fabricated by ion beam implantation, a technique that allows doping concentrations beyond the equilibrium solubility limit. We studied two approaches for the preparation of Mn-doped GaAs NWs: First, ion implantation at room temperature with subsequent annealing resulted in polycrystalline NWs and phase segregation of MnAs and GaAs. The second approach was ion implantation at elevated temperatures. In this case, the single-crystallinity of the GaAs NWs was maintained, and crystalline, highly Mn-doped GaAs NWs were obtained. The electrical resistance of such NWs dropped with increasing temperature (activation energy about 70 meV). Corresponding magnetoresistance... (More)
- We report on highly Mn-doped GaAs nanowires (NWs) of high crystalline quality fabricated by ion beam implantation, a technique that allows doping concentrations beyond the equilibrium solubility limit. We studied two approaches for the preparation of Mn-doped GaAs NWs: First, ion implantation at room temperature with subsequent annealing resulted in polycrystalline NWs and phase segregation of MnAs and GaAs. The second approach was ion implantation at elevated temperatures. In this case, the single-crystallinity of the GaAs NWs was maintained, and crystalline, highly Mn-doped GaAs NWs were obtained. The electrical resistance of such NWs dropped with increasing temperature (activation energy about 70 meV). Corresponding magnetoresistance measurements showed a decrease at low temperatures, indicating paramagnetism. Our findings suggest possibilities for future applications where dense arrays of GaMnAs nanowires may be used as a new kind of magnetic material system. (Less)
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https://lup.lub.lu.se/record/2179336
- author
- organization
- publishing date
- 2011
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- Nanowires, GaAs, doping, DMS, ion implantation, dynamic annealing
- in
- Nano Letters
- volume
- 11
- issue
- 9
- pages
- 3935 - 3940
- publisher
- The American Chemical Society (ACS)
- external identifiers
-
- wos:000294790200073
- scopus:80052786045
- pmid:21848314
- ISSN
- 1530-6992
- DOI
- 10.1021/nl2021653
- language
- English
- LU publication?
- yes
- id
- 1e6d9f06-8742-4c5a-87af-e60b3040df47 (old id 2179336)
- date added to LUP
- 2016-04-01 14:46:05
- date last changed
- 2023-11-13 12:03:00
@article{1e6d9f06-8742-4c5a-87af-e60b3040df47, abstract = {{We report on highly Mn-doped GaAs nanowires (NWs) of high crystalline quality fabricated by ion beam implantation, a technique that allows doping concentrations beyond the equilibrium solubility limit. We studied two approaches for the preparation of Mn-doped GaAs NWs: First, ion implantation at room temperature with subsequent annealing resulted in polycrystalline NWs and phase segregation of MnAs and GaAs. The second approach was ion implantation at elevated temperatures. In this case, the single-crystallinity of the GaAs NWs was maintained, and crystalline, highly Mn-doped GaAs NWs were obtained. The electrical resistance of such NWs dropped with increasing temperature (activation energy about 70 meV). Corresponding magnetoresistance measurements showed a decrease at low temperatures, indicating paramagnetism. Our findings suggest possibilities for future applications where dense arrays of GaMnAs nanowires may be used as a new kind of magnetic material system.}}, author = {{Borschel, Christian and Messing, Maria and Borgström, Magnus and Paschoal, Waldomiro and Wallentin, Jesper and Kumar, Sandeep and Mergenthaler, Kilian and Deppert, Knut and Canali, Carlo M. and Pettersson, Hakan and Samuelson, Lars and Ronning, Carsten}}, issn = {{1530-6992}}, keywords = {{Nanowires; GaAs; doping; DMS; ion implantation; dynamic annealing}}, language = {{eng}}, number = {{9}}, pages = {{3935--3940}}, publisher = {{The American Chemical Society (ACS)}}, series = {{Nano Letters}}, title = {{A New Route toward Semiconductor Nanospintronics: Highly Mn-Doped GaAs Nanowires Realized by Ion-Implantation under Dynamic Annealing Conditions}}, url = {{http://dx.doi.org/10.1021/nl2021653}}, doi = {{10.1021/nl2021653}}, volume = {{11}}, year = {{2011}}, }