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Interstitial carbon related defects in low-temperature irradiated Si: FTIR and DLTS studies

Khirunenko, L; Pomozov, Y; Tripachko, N; Sosnin, M; Duvanskii, A; Murin, LI; Lindström, Lennart LU ; Lastovskii, SB; Makarenko, LF and Markevich, VP, et al. (2005) In Solid State Phenomena 108-109. p.261-266
Abstract
The evolution of radiation-induced carbon-related defects in low temperature irradiated oxygen containing silicon has been studied by means of Fourier transform infrared absorption spectroscopy (FTIR) and deep level transient spectroscopy (DLTS). FTIR measurements have shown that annealing of interstitial carbon atom C-i, occurring in the temperature interval 260-300 K, results in a gradual appearance of a number of new absorption bands along with the well known bands related to the CiOi complex. The new bands are positioned at 812, 910.2, 942.6, 967.4 and 1086 cm(-1). It has been found that the pair of bands at 910 and 942 cm(-1) as well as another set of the bands at 812, 967.4 and 1086 cm(-1) display identical behavior upon isochronal... (More)
The evolution of radiation-induced carbon-related defects in low temperature irradiated oxygen containing silicon has been studied by means of Fourier transform infrared absorption spectroscopy (FTIR) and deep level transient spectroscopy (DLTS). FTIR measurements have shown that annealing of interstitial carbon atom C-i, occurring in the temperature interval 260-300 K, results in a gradual appearance of a number of new absorption bands along with the well known bands related to the CiOi complex. The new bands are positioned at 812, 910.2, 942.6, 967.4 and 1086 cm(-1). It has been found that the pair of bands at 910 and 942 cm(-1) as well as another set of the bands at 812, 967.4 and 1086 cm(-1) display identical behavior upon isochronal annealing, i.e. the bands in both groups appear and disappear simultaneously. The disappearance of the first group occurs at T = 285-300 K while the second group anneals out at T = 310-340 K. These processes are accompanied by an increase in intensity of the bands related to CiOi. It is suggested that intermediate states (precursors) are formed upon the transformation from a single (isolated) Ci atom to a stable CiOi defect. The results obtained in DLTS studies are in agreement with the FTIR data and show unambiguously the formation of CiOi precursors with slightly lower activation energy for the hole emission as compare to that for the main CiOi state. (Less)
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Contribution to journal
publication status
published
subject
keywords
infrared absorption, annealing, irradiation, silicon, carbon impurity, DLTS
in
Solid State Phenomena
volume
108-109
pages
261 - 266
publisher
Trans Tech Publications Ltd
external identifiers
  • wos:000234198300041
  • scopus:36048979319
ISSN
1012-0394
language
English
LU publication?
yes
id
41e81f6a-3671-405c-8485-8453010f23ff (old id 210245)
date added to LUP
2007-08-15 11:40:31
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2017-01-01 07:27:40
@article{41e81f6a-3671-405c-8485-8453010f23ff,
  abstract     = {The evolution of radiation-induced carbon-related defects in low temperature irradiated oxygen containing silicon has been studied by means of Fourier transform infrared absorption spectroscopy (FTIR) and deep level transient spectroscopy (DLTS). FTIR measurements have shown that annealing of interstitial carbon atom C-i, occurring in the temperature interval 260-300 K, results in a gradual appearance of a number of new absorption bands along with the well known bands related to the CiOi complex. The new bands are positioned at 812, 910.2, 942.6, 967.4 and 1086 cm(-1). It has been found that the pair of bands at 910 and 942 cm(-1) as well as another set of the bands at 812, 967.4 and 1086 cm(-1) display identical behavior upon isochronal annealing, i.e. the bands in both groups appear and disappear simultaneously. The disappearance of the first group occurs at T = 285-300 K while the second group anneals out at T = 310-340 K. These processes are accompanied by an increase in intensity of the bands related to CiOi. It is suggested that intermediate states (precursors) are formed upon the transformation from a single (isolated) Ci atom to a stable CiOi defect. The results obtained in DLTS studies are in agreement with the FTIR data and show unambiguously the formation of CiOi precursors with slightly lower activation energy for the hole emission as compare to that for the main CiOi state.},
  author       = {Khirunenko, L and Pomozov, Y and Tripachko, N and Sosnin, M and Duvanskii, A and Murin, LI and Lindström, Lennart and Lastovskii, SB and Makarenko, LF and Markevich, VP and Peaker, AR},
  issn         = {1012-0394},
  keyword      = {infrared absorption,annealing,irradiation,silicon,carbon impurity,DLTS},
  language     = {eng},
  pages        = {261--266},
  publisher    = {Trans Tech Publications Ltd},
  series       = {Solid State Phenomena},
  title        = {Interstitial carbon related defects in low-temperature irradiated Si: FTIR and DLTS studies},
  volume       = {108-109},
  year         = {2005},
}