Advanced

Electronic properties and structure of a complex incorporating a self-interstitial and two oxygen atoms in silicon

Markevich, VP; Murin, LI; Lastovskii, SB; Medvedeva, IF; Lindström, Lennart LU ; Peaker, AR; Coutinho, J; Jones, R; Torres, VJB and Oberg, S, et al. (2005) In Solid State Phenomena 108-109. p.273-278
Abstract
The electronic properties and structure of a complex incorporating a self-interstitial (i) and two oxygen atoms are presented by a combination of deep level transient spectroscopy (DLTS), infrared absorption spectroscopy and ab-initio modeling studies. It is argued that the IO2 complex in Si can exist in four charge states (IO2-, IO20, IO2+, and IO2++). The first and the second donor levels of the IO2 complex show an inverted location order in the gap, leading to a E(0/+ +) occupancy level at E-V + 0.255 eV. Activation energies for hole emission, transformation barriers between different structures, and positions of LVM lines for different configurations and charge states have been determined. These observables were calculated by... (More)
The electronic properties and structure of a complex incorporating a self-interstitial (i) and two oxygen atoms are presented by a combination of deep level transient spectroscopy (DLTS), infrared absorption spectroscopy and ab-initio modeling studies. It is argued that the IO2 complex in Si can exist in four charge states (IO2-, IO20, IO2+, and IO2++). The first and the second donor levels of the IO2 complex show an inverted location order in the gap, leading to a E(0/+ +) occupancy level at E-V + 0.255 eV. Activation energies for hole emission, transformation barriers between different structures, and positions of LVM lines for different configurations and charge states have been determined. These observables were calculated by density-functional calculations, which show that they are accounted for if we consider at least two charge-dependent defect structures. (Less)
Please use this url to cite or link to this publication:
author
, et al. (More)
(Less)
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
infrared absorption, DLTS, self-interstitial, silicon, oxygen, ab-initio modeling
in
Solid State Phenomena
volume
108-109
pages
273 - 278
publisher
Trans Tech Publications Ltd
external identifiers
  • wos:000234198300043
  • scopus:34247888366
ISSN
1012-0394
language
English
LU publication?
yes
id
d08767ba-8c86-432d-8d6e-eb319d9db7eb (old id 210264)
date added to LUP
2007-08-10 14:48:15
date last changed
2017-01-01 07:03:08
@article{d08767ba-8c86-432d-8d6e-eb319d9db7eb,
  abstract     = {The electronic properties and structure of a complex incorporating a self-interstitial (i) and two oxygen atoms are presented by a combination of deep level transient spectroscopy (DLTS), infrared absorption spectroscopy and ab-initio modeling studies. It is argued that the IO2 complex in Si can exist in four charge states (IO2-, IO20, IO2+, and IO2++). The first and the second donor levels of the IO2 complex show an inverted location order in the gap, leading to a E(0/+ +) occupancy level at E-V + 0.255 eV. Activation energies for hole emission, transformation barriers between different structures, and positions of LVM lines for different configurations and charge states have been determined. These observables were calculated by density-functional calculations, which show that they are accounted for if we consider at least two charge-dependent defect structures.},
  author       = {Markevich, VP and Murin, LI and Lastovskii, SB and Medvedeva, IF and Lindström, Lennart and Peaker, AR and Coutinho, J and Jones, R and Torres, VJB and Oberg, S and Briddon, PR},
  issn         = {1012-0394},
  keyword      = {infrared absorption,DLTS,self-interstitial,silicon,oxygen,ab-initio modeling},
  language     = {eng},
  pages        = {273--278},
  publisher    = {Trans Tech Publications Ltd},
  series       = {Solid State Phenomena},
  title        = {Electronic properties and structure of a complex incorporating a self-interstitial and two oxygen atoms in silicon},
  volume       = {108-109},
  year         = {2005},
}