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A New Route toward Semiconductor Nanospintronics: Highly Mn-Doped GaAs Nanowires Realized by Ion-Implantation under Dynamic Annealing Conditions

Borschel, Christian; Messing, Maria LU ; Borgström, Magnus LU ; Paschoal, Waldomiro LU ; Wallentin, Jesper LU ; Kumar, Sandeep LU ; Mergenthaler, Kilian LU ; Deppert, Knut LU ; Canali, Carlo M. and Pettersson, Hakan, et al. (2011) In Nano Letters 11(9). p.3935-3940
Abstract
We report on highly Mn-doped GaAs nanowires (NWs) of high crystalline quality fabricated by ion beam implantation, a technique that allows doping concentrations beyond the equilibrium solubility limit. We studied two approaches for the preparation of Mn-doped GaAs NWs: First, ion implantation at room temperature with subsequent annealing resulted in polycrystalline NWs and phase segregation of MnAs and GaAs. The second approach was ion implantation at elevated temperatures. In this case, the single-crystallinity of the GaAs NWs was maintained, and crystalline, highly Mn-doped GaAs NWs were obtained. The electrical resistance of such NWs dropped with increasing temperature (activation energy about 70 meV). Corresponding magnetoresistance... (More)
We report on highly Mn-doped GaAs nanowires (NWs) of high crystalline quality fabricated by ion beam implantation, a technique that allows doping concentrations beyond the equilibrium solubility limit. We studied two approaches for the preparation of Mn-doped GaAs NWs: First, ion implantation at room temperature with subsequent annealing resulted in polycrystalline NWs and phase segregation of MnAs and GaAs. The second approach was ion implantation at elevated temperatures. In this case, the single-crystallinity of the GaAs NWs was maintained, and crystalline, highly Mn-doped GaAs NWs were obtained. The electrical resistance of such NWs dropped with increasing temperature (activation energy about 70 meV). Corresponding magnetoresistance measurements showed a decrease at low temperatures, indicating paramagnetism. Our findings suggest possibilities for future applications where dense arrays of GaMnAs nanowires may be used as a new kind of magnetic material system. (Less)
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Contribution to journal
publication status
published
subject
keywords
Nanowires, GaAs, doping, DMS, ion implantation, dynamic annealing
in
Nano Letters
volume
11
issue
9
pages
3935 - 3940
publisher
The American Chemical Society
external identifiers
  • wos:000294790200073
  • scopus:80052786045
ISSN
1530-6992
DOI
10.1021/nl2021653
language
English
LU publication?
yes
id
1e6d9f06-8742-4c5a-87af-e60b3040df47 (old id 2179336)
date added to LUP
2011-10-24 15:49:05
date last changed
2017-11-19 03:59:42
@article{1e6d9f06-8742-4c5a-87af-e60b3040df47,
  abstract     = {We report on highly Mn-doped GaAs nanowires (NWs) of high crystalline quality fabricated by ion beam implantation, a technique that allows doping concentrations beyond the equilibrium solubility limit. We studied two approaches for the preparation of Mn-doped GaAs NWs: First, ion implantation at room temperature with subsequent annealing resulted in polycrystalline NWs and phase segregation of MnAs and GaAs. The second approach was ion implantation at elevated temperatures. In this case, the single-crystallinity of the GaAs NWs was maintained, and crystalline, highly Mn-doped GaAs NWs were obtained. The electrical resistance of such NWs dropped with increasing temperature (activation energy about 70 meV). Corresponding magnetoresistance measurements showed a decrease at low temperatures, indicating paramagnetism. Our findings suggest possibilities for future applications where dense arrays of GaMnAs nanowires may be used as a new kind of magnetic material system.},
  author       = {Borschel, Christian and Messing, Maria and Borgström, Magnus and Paschoal, Waldomiro and Wallentin, Jesper and Kumar, Sandeep and Mergenthaler, Kilian and Deppert, Knut and Canali, Carlo M. and Pettersson, Hakan and Samuelson, Lars and Ronning, Carsten},
  issn         = {1530-6992},
  keyword      = {Nanowires,GaAs,doping,DMS,ion implantation,dynamic annealing},
  language     = {eng},
  number       = {9},
  pages        = {3935--3940},
  publisher    = {The American Chemical Society},
  series       = {Nano Letters},
  title        = {A New Route toward Semiconductor Nanospintronics: Highly Mn-Doped GaAs Nanowires Realized by Ion-Implantation under Dynamic Annealing Conditions},
  url          = {http://dx.doi.org/10.1021/nl2021653},
  volume       = {11},
  year         = {2011},
}