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Growth of doped InAsyP1-y nanowires with InP shells

Wallentin, Jesper LU ; Messing, Maria LU ; Trygg, Erik; Samuelson, Lars LU ; Deppert, Knut LU and Borgström, Magnus LU (2011) In Journal of Crystal Growth 331(1). p.8-14
Abstract
We have studied the growth of doped InAsyP1-y (InAsP) NWs and InAsP-InP core-shell NWs. Using hydrogen chloride (HCl) we were able to prevent radial growth on the InAsP NWs. Undoped and H2S-doped InAsP NWs had almost pure wurtzite crystal structure, while DEZn-doped NWs showed wurtzite periodically separated by short sections of pure zincblende with rotational twins. Electrical measurements confirmed that the H2S-doped and DEZn-doped NWs were highly n- and p-doped, respectively. The core crystal structure strongly influenced the subsequent radial growth of InP shells, and we observed perfectly smooth shells on H2S-doped cores while the zincblende sections resulted in large bulges on the DEZn-doped cores. The average radial growth rate was... (More)
We have studied the growth of doped InAsyP1-y (InAsP) NWs and InAsP-InP core-shell NWs. Using hydrogen chloride (HCl) we were able to prevent radial growth on the InAsP NWs. Undoped and H2S-doped InAsP NWs had almost pure wurtzite crystal structure, while DEZn-doped NWs showed wurtzite periodically separated by short sections of pure zincblende with rotational twins. Electrical measurements confirmed that the H2S-doped and DEZn-doped NWs were highly n- and p-doped, respectively. The core crystal structure strongly influenced the subsequent radial growth of InP shells, and we observed perfectly smooth shells on H2S-doped cores while the zincblende sections resulted in large bulges on the DEZn-doped cores. The average radial growth rate was more than twice as high on the DEZn-doped cores as on the H2S-doped cores. We found that the radial shell growth decreased at increasing temperature, while the axial growth increased. These results demonstrate the importance of the NW core crystal structure for the growth of core-shell NWs. (C) 2011 Elsevier B.V. All rights reserved. (Less)
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organization
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Contribution to journal
publication status
published
subject
keywords
Nanostructures, Crystal structure, Low pressure metalorganic vapor, phase epitaxy, Nanomaterials, Semiconducting indium compounds, Semiconducting III-V materials
in
Journal of Crystal Growth
volume
331
issue
1
pages
8 - 14
publisher
Elsevier
external identifiers
  • wos:000295067900003
  • scopus:80051882339
ISSN
0022-0248
DOI
10.1016/j.jcrysgro.2011.07.002
language
English
LU publication?
yes
id
8cb059d4-4b4d-4ab2-9dff-88a58beaa953 (old id 2180155)
date added to LUP
2011-10-25 09:55:44
date last changed
2017-11-12 03:44:18
@article{8cb059d4-4b4d-4ab2-9dff-88a58beaa953,
  abstract     = {We have studied the growth of doped InAsyP1-y (InAsP) NWs and InAsP-InP core-shell NWs. Using hydrogen chloride (HCl) we were able to prevent radial growth on the InAsP NWs. Undoped and H2S-doped InAsP NWs had almost pure wurtzite crystal structure, while DEZn-doped NWs showed wurtzite periodically separated by short sections of pure zincblende with rotational twins. Electrical measurements confirmed that the H2S-doped and DEZn-doped NWs were highly n- and p-doped, respectively. The core crystal structure strongly influenced the subsequent radial growth of InP shells, and we observed perfectly smooth shells on H2S-doped cores while the zincblende sections resulted in large bulges on the DEZn-doped cores. The average radial growth rate was more than twice as high on the DEZn-doped cores as on the H2S-doped cores. We found that the radial shell growth decreased at increasing temperature, while the axial growth increased. These results demonstrate the importance of the NW core crystal structure for the growth of core-shell NWs. (C) 2011 Elsevier B.V. All rights reserved.},
  author       = {Wallentin, Jesper and Messing, Maria and Trygg, Erik and Samuelson, Lars and Deppert, Knut and Borgström, Magnus},
  issn         = {0022-0248},
  keyword      = {Nanostructures,Crystal structure,Low pressure metalorganic vapor,phase epitaxy,Nanomaterials,Semiconducting indium compounds,Semiconducting III-V materials},
  language     = {eng},
  number       = {1},
  pages        = {8--14},
  publisher    = {Elsevier},
  series       = {Journal of Crystal Growth},
  title        = {Growth of doped InAsyP1-y nanowires with InP shells},
  url          = {http://dx.doi.org/10.1016/j.jcrysgro.2011.07.002},
  volume       = {331},
  year         = {2011},
}