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InAs quantum dots and quantum wells grown on stacking-fault controlled InP nanowires with wurtzite crystal structure

Kawaguchi, Kenichi; Heurlin, Magnus LU ; Lindgren, David LU ; Borgström, Magnus LU ; Ek, Martin LU and Samuelson, Lars LU (2011) In Applied Physics Letters 99(13).
Abstract
Heteroepitaxial growth of InAs was investigated on sidewalls of InP nanowires (NWs) using metal-organic vapor phase epitaxy. InAs quantum wells (QWs) with smooth surface were formed on the InP NWs having perfect wurtzite phase structure. On the other hand, InAs quantum dots (QDs) were formed on wurtzite InP NWs purposely introduced with stacking-fault segments. Photoluminescence from single NWs attributed to both QWs and QDs was observed. (C) 2011 American Institute of Physics. [doi:10.1063/1.3646386]
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
III-V semiconductors, indium compounds, MOCVD, photoluminescence, semiconductor growth, semiconductor quantum dots, semiconductor quantum, wells, stacking faults, vapour phase epitaxial growth
in
Applied Physics Letters
volume
99
issue
13
publisher
American Institute of Physics
external identifiers
  • wos:000295618000035
  • scopus:80053534832
ISSN
0003-6951
DOI
10.1063/1.3646386
language
English
LU publication?
yes
id
d8e65863-4bc8-41b5-b0cf-8a8fe17b96a3 (old id 2211604)
date added to LUP
2011-11-25 11:33:47
date last changed
2017-09-24 03:12:46
@article{d8e65863-4bc8-41b5-b0cf-8a8fe17b96a3,
  abstract     = {Heteroepitaxial growth of InAs was investigated on sidewalls of InP nanowires (NWs) using metal-organic vapor phase epitaxy. InAs quantum wells (QWs) with smooth surface were formed on the InP NWs having perfect wurtzite phase structure. On the other hand, InAs quantum dots (QDs) were formed on wurtzite InP NWs purposely introduced with stacking-fault segments. Photoluminescence from single NWs attributed to both QWs and QDs was observed. (C) 2011 American Institute of Physics. [doi:10.1063/1.3646386]},
  author       = {Kawaguchi, Kenichi and Heurlin, Magnus and Lindgren, David and Borgström, Magnus and Ek, Martin and Samuelson, Lars},
  issn         = {0003-6951},
  keyword      = {III-V semiconductors,indium compounds,MOCVD,photoluminescence,semiconductor growth,semiconductor quantum dots,semiconductor quantum,wells,stacking faults,vapour phase epitaxial growth},
  language     = {eng},
  number       = {13},
  publisher    = {American Institute of Physics},
  series       = {Applied Physics Letters},
  title        = {InAs quantum dots and quantum wells grown on stacking-fault controlled InP nanowires with wurtzite crystal structure},
  url          = {http://dx.doi.org/10.1063/1.3646386},
  volume       = {99},
  year         = {2011},
}