InAs quantum dots and quantum wells grown on stacking-fault controlled InP nanowires with wurtzite crystal structure
(2011) In Applied Physics Letters 99(13).- Abstract
- Heteroepitaxial growth of InAs was investigated on sidewalls of InP nanowires (NWs) using metal-organic vapor phase epitaxy. InAs quantum wells (QWs) with smooth surface were formed on the InP NWs having perfect wurtzite phase structure. On the other hand, InAs quantum dots (QDs) were formed on wurtzite InP NWs purposely introduced with stacking-fault segments. Photoluminescence from single NWs attributed to both QWs and QDs was observed. (C) 2011 American Institute of Physics. [doi:10.1063/1.3646386]
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/2211604
- author
- Kawaguchi, Kenichi ; Heurlin, Magnus LU ; Lindgren, David LU ; Borgström, Magnus LU ; Ek, Martin LU and Samuelson, Lars LU
- organization
- publishing date
- 2011
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- III-V semiconductors, indium compounds, MOCVD, photoluminescence, semiconductor growth, semiconductor quantum dots, semiconductor quantum, wells, stacking faults, vapour phase epitaxial growth
- in
- Applied Physics Letters
- volume
- 99
- issue
- 13
- publisher
- American Institute of Physics (AIP)
- external identifiers
-
- wos:000295618000035
- scopus:80053534832
- ISSN
- 0003-6951
- DOI
- 10.1063/1.3646386
- language
- English
- LU publication?
- yes
- additional info
- The information about affiliations in this record was updated in December 2015. The record was previously connected to the following departments: Polymer and Materials Chemistry (LTH) (011001041), Solid State Physics (011013006)
- id
- d8e65863-4bc8-41b5-b0cf-8a8fe17b96a3 (old id 2211604)
- date added to LUP
- 2016-04-01 10:27:29
- date last changed
- 2023-11-09 21:23:47
@article{d8e65863-4bc8-41b5-b0cf-8a8fe17b96a3, abstract = {{Heteroepitaxial growth of InAs was investigated on sidewalls of InP nanowires (NWs) using metal-organic vapor phase epitaxy. InAs quantum wells (QWs) with smooth surface were formed on the InP NWs having perfect wurtzite phase structure. On the other hand, InAs quantum dots (QDs) were formed on wurtzite InP NWs purposely introduced with stacking-fault segments. Photoluminescence from single NWs attributed to both QWs and QDs was observed. (C) 2011 American Institute of Physics. [doi:10.1063/1.3646386]}}, author = {{Kawaguchi, Kenichi and Heurlin, Magnus and Lindgren, David and Borgström, Magnus and Ek, Martin and Samuelson, Lars}}, issn = {{0003-6951}}, keywords = {{III-V semiconductors; indium compounds; MOCVD; photoluminescence; semiconductor growth; semiconductor quantum dots; semiconductor quantum; wells; stacking faults; vapour phase epitaxial growth}}, language = {{eng}}, number = {{13}}, publisher = {{American Institute of Physics (AIP)}}, series = {{Applied Physics Letters}}, title = {{InAs quantum dots and quantum wells grown on stacking-fault controlled InP nanowires with wurtzite crystal structure}}, url = {{http://dx.doi.org/10.1063/1.3646386}}, doi = {{10.1063/1.3646386}}, volume = {{99}}, year = {{2011}}, }