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Unipolar and bipolar operation of InAs/InSb nanowire heterostructure field-effect transistors

Nilsson, Henrik LU ; Caroff, Philippe LU ; Lind, Erik LU ; Pistol, Mats-Erik LU ; Thelander, Claes LU and Wernersson, Lars-Erik LU (2011) In Applied Physics Reviews 110(6).
Abstract
We present temperature dependent electrical measurements on n-type InAs/InSb nanowire heterostructure field-effect transistors. The barrier height of the heterostructure junction is determined to be 220 meV, indicating a broken bandgap alignment. A clear asymmetry is observed when applying a bias to either the InAs or the InSb side of the junction. Impact ionization and band-to-band tunneling is more pronounced when the large voltage drop occurs in the narrow bandgap InSb segment. For small negative gate-voltages, the InSb segment can be tuned toward p-type conduction, which induces a strong band-to-band tunneling across the heterostructucture junction. (c) 2011 American Institute of Physics. [doi: 10.1063/1.3633742]
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organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Applied Physics Reviews
volume
110
issue
6
publisher
American Institute of Physics
external identifiers
  • wos:000295619300158
  • scopus:80053550455
ISSN
0021-8979
DOI
10.1063/1.3633742
language
English
LU publication?
yes
id
8f971e61-3cc3-45b9-98e4-22f87ffbabca (old id 2211820)
date added to LUP
2011-11-25 08:27:00
date last changed
2017-07-09 03:22:11
@article{8f971e61-3cc3-45b9-98e4-22f87ffbabca,
  abstract     = {We present temperature dependent electrical measurements on n-type InAs/InSb nanowire heterostructure field-effect transistors. The barrier height of the heterostructure junction is determined to be 220 meV, indicating a broken bandgap alignment. A clear asymmetry is observed when applying a bias to either the InAs or the InSb side of the junction. Impact ionization and band-to-band tunneling is more pronounced when the large voltage drop occurs in the narrow bandgap InSb segment. For small negative gate-voltages, the InSb segment can be tuned toward p-type conduction, which induces a strong band-to-band tunneling across the heterostructucture junction. (c) 2011 American Institute of Physics. [doi: 10.1063/1.3633742]},
  author       = {Nilsson, Henrik and Caroff, Philippe and Lind, Erik and Pistol, Mats-Erik and Thelander, Claes and Wernersson, Lars-Erik},
  issn         = {0021-8979},
  language     = {eng},
  number       = {6},
  publisher    = {American Institute of Physics},
  series       = {Applied Physics Reviews},
  title        = {Unipolar and bipolar operation of InAs/InSb nanowire heterostructure field-effect transistors},
  url          = {http://dx.doi.org/10.1063/1.3633742},
  volume       = {110},
  year         = {2011},
}