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Uniform and position-controlled InAs nanowires on 2('') Si substrates for transistor applications.

Gorji, Sepideh LU ; Johansson, Sofia LU ; Borg, Mattias LU ; Lind, Erik LU ; Dick Thelander, Kimberly LU and Wernersson, Lars-Erik LU (2012) In Nanotechnology 23(1).
Abstract
This study presents a novel approach for indirect integration of InAs nanowires on 2('') Si substrates. We have investigated and developed epitaxial growth of InAs nanowires on 2('') Si substrates via the introduction of a thin yet high-quality InAs epitaxial layer grown by metalorganic vapor phase epitaxy. We demonstrate well-aligned nanowire growth including precise position and diameter control across the full wafer using very thin epitaxial layers (<300 nm). Statistical analysis results performed on the grown nanowires across the 2('') wafer size verifies our full control on the grown nanowire with 100% growth yield. From the crystallographic viewpoint, these InAs nanowires are predominantly of wurtzite structure. Furthermore, we... (More)
This study presents a novel approach for indirect integration of InAs nanowires on 2('') Si substrates. We have investigated and developed epitaxial growth of InAs nanowires on 2('') Si substrates via the introduction of a thin yet high-quality InAs epitaxial layer grown by metalorganic vapor phase epitaxy. We demonstrate well-aligned nanowire growth including precise position and diameter control across the full wafer using very thin epitaxial layers (<300 nm). Statistical analysis results performed on the grown nanowires across the 2('') wafer size verifies our full control on the grown nanowire with 100% growth yield. From the crystallographic viewpoint, these InAs nanowires are predominantly of wurtzite structure. Furthermore, we show one possible device application of the aforementioned structure in vertical wrap-gated field-effect transistor geometry. The vertically aligned InAs nanowires are utilized as transistor channels and the InAs epitaxial layer is employed as the source contact. A high uniformity of the device characteristics for numerous transistors is further presented and RF characterization of these devices demonstrates an f(t) of 9.8 GHz. (Less)
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Nanotechnology
volume
23
issue
1
publisher
IOP Publishing
external identifiers
  • wos:000298155900005
  • pmid:22155896
  • scopus:83455211764
ISSN
0957-4484
DOI
10.1088/0957-4484/23/1/015302
language
English
LU publication?
yes
id
86ea2c63-53ae-44f7-91ea-a7e9c2bd5a89 (old id 2274209)
date added to LUP
2012-01-09 14:09:03
date last changed
2017-10-01 03:34:20
@article{86ea2c63-53ae-44f7-91ea-a7e9c2bd5a89,
  abstract     = {This study presents a novel approach for indirect integration of InAs nanowires on 2('') Si substrates. We have investigated and developed epitaxial growth of InAs nanowires on 2('') Si substrates via the introduction of a thin yet high-quality InAs epitaxial layer grown by metalorganic vapor phase epitaxy. We demonstrate well-aligned nanowire growth including precise position and diameter control across the full wafer using very thin epitaxial layers (&lt;300 nm). Statistical analysis results performed on the grown nanowires across the 2('') wafer size verifies our full control on the grown nanowire with 100% growth yield. From the crystallographic viewpoint, these InAs nanowires are predominantly of wurtzite structure. Furthermore, we show one possible device application of the aforementioned structure in vertical wrap-gated field-effect transistor geometry. The vertically aligned InAs nanowires are utilized as transistor channels and the InAs epitaxial layer is employed as the source contact. A high uniformity of the device characteristics for numerous transistors is further presented and RF characterization of these devices demonstrates an f(t) of 9.8 GHz.},
  articleno    = {015302},
  author       = {Gorji, Sepideh and Johansson, Sofia and Borg, Mattias and Lind, Erik and Dick Thelander, Kimberly and Wernersson, Lars-Erik},
  issn         = {0957-4484},
  language     = {eng},
  number       = {1},
  publisher    = {IOP Publishing},
  series       = {Nanotechnology},
  title        = {Uniform and position-controlled InAs nanowires on 2('') Si substrates for transistor applications.},
  url          = {http://dx.doi.org/10.1088/0957-4484/23/1/015302},
  volume       = {23},
  year         = {2012},
}