Uniform and position-controlled InAs nanowires on 2('') Si substrates for transistor applications.
(2012) In Nanotechnology 23(1).- Abstract
- This study presents a novel approach for indirect integration of InAs nanowires on 2('') Si substrates. We have investigated and developed epitaxial growth of InAs nanowires on 2('') Si substrates via the introduction of a thin yet high-quality InAs epitaxial layer grown by metalorganic vapor phase epitaxy. We demonstrate well-aligned nanowire growth including precise position and diameter control across the full wafer using very thin epitaxial layers (<300 nm). Statistical analysis results performed on the grown nanowires across the 2('') wafer size verifies our full control on the grown nanowire with 100% growth yield. From the crystallographic viewpoint, these InAs nanowires are predominantly of wurtzite structure. Furthermore, we... (More)
- This study presents a novel approach for indirect integration of InAs nanowires on 2('') Si substrates. We have investigated and developed epitaxial growth of InAs nanowires on 2('') Si substrates via the introduction of a thin yet high-quality InAs epitaxial layer grown by metalorganic vapor phase epitaxy. We demonstrate well-aligned nanowire growth including precise position and diameter control across the full wafer using very thin epitaxial layers (<300 nm). Statistical analysis results performed on the grown nanowires across the 2('') wafer size verifies our full control on the grown nanowire with 100% growth yield. From the crystallographic viewpoint, these InAs nanowires are predominantly of wurtzite structure. Furthermore, we show one possible device application of the aforementioned structure in vertical wrap-gated field-effect transistor geometry. The vertically aligned InAs nanowires are utilized as transistor channels and the InAs epitaxial layer is employed as the source contact. A high uniformity of the device characteristics for numerous transistors is further presented and RF characterization of these devices demonstrates an f(t) of 9.8 GHz. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/2274209
- author
- Gorji, Sepideh LU ; Johansson, Sofia LU ; Borg, Mattias LU ; Lind, Erik LU ; Dick Thelander, Kimberly LU and Wernersson, Lars-Erik LU
- organization
- publishing date
- 2012
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Nanotechnology
- volume
- 23
- issue
- 1
- article number
- 015302
- publisher
- IOP Publishing
- external identifiers
-
- wos:000298155900005
- pmid:22155896
- scopus:83455211764
- pmid:22155896
- ISSN
- 0957-4484
- DOI
- 10.1088/0957-4484/23/1/015302
- language
- English
- LU publication?
- yes
- id
- 86ea2c63-53ae-44f7-91ea-a7e9c2bd5a89 (old id 2274209)
- date added to LUP
- 2016-04-01 11:17:07
- date last changed
- 2024-01-07 12:04:51
@article{86ea2c63-53ae-44f7-91ea-a7e9c2bd5a89, abstract = {{This study presents a novel approach for indirect integration of InAs nanowires on 2('') Si substrates. We have investigated and developed epitaxial growth of InAs nanowires on 2('') Si substrates via the introduction of a thin yet high-quality InAs epitaxial layer grown by metalorganic vapor phase epitaxy. We demonstrate well-aligned nanowire growth including precise position and diameter control across the full wafer using very thin epitaxial layers (<300 nm). Statistical analysis results performed on the grown nanowires across the 2('') wafer size verifies our full control on the grown nanowire with 100% growth yield. From the crystallographic viewpoint, these InAs nanowires are predominantly of wurtzite structure. Furthermore, we show one possible device application of the aforementioned structure in vertical wrap-gated field-effect transistor geometry. The vertically aligned InAs nanowires are utilized as transistor channels and the InAs epitaxial layer is employed as the source contact. A high uniformity of the device characteristics for numerous transistors is further presented and RF characterization of these devices demonstrates an f(t) of 9.8 GHz.}}, author = {{Gorji, Sepideh and Johansson, Sofia and Borg, Mattias and Lind, Erik and Dick Thelander, Kimberly and Wernersson, Lars-Erik}}, issn = {{0957-4484}}, language = {{eng}}, number = {{1}}, publisher = {{IOP Publishing}}, series = {{Nanotechnology}}, title = {{Uniform and position-controlled InAs nanowires on 2('') Si substrates for transistor applications.}}, url = {{http://dx.doi.org/10.1088/0957-4484/23/1/015302}}, doi = {{10.1088/0957-4484/23/1/015302}}, volume = {{23}}, year = {{2012}}, }