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Dual-gate induced InP nanowire diode

Storm, Kristian LU ; Nylund, Gustav LU ; Borgström, Magnus LU ; Wallentin, Jesper LU ; Fasth, Carina LU ; Thelander, Claes LU and Samuelson, Lars LU (2011) 30th International Conference on the Physics of Semiconductors (ICPS-30) In Physics of Semiconductors: 30th International Conference on the Physics of Semiconductors 1399. p.279-280
Abstract
Semiconductor devices are heavily dependent on dopant incorporation in order to control the electrical properties. In this paper we investigate the possibility of using gates wrapped around a nanowire (NW) channel as a way of tuning the Fermi level position, in certain cases removing the need for dopants and providing a more dynamical way of setting the device properties. InP NW devices with omega gates are fabricated, and a p-n junction is formed in a nominally intrinsic NW channel. In order to further increase the electrostatic control of the channel and other device properties, vertical devices are discussed as a promising way of implementing this type of device.
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
keywords
Fermi level tuning, InP, wrap-gate, nanowire
in
Physics of Semiconductors: 30th International Conference on the Physics of Semiconductors
volume
1399
pages
279 - 280
publisher
American Institute of Physics
conference name
30th International Conference on the Physics of Semiconductors (ICPS-30)
external identifiers
  • wos:000301053000124
  • scopus:84855497453
ISSN
1551-7616
0094-243X
DOI
10.1063/1.3666362
language
English
LU publication?
yes
id
e418ee94-467d-4242-bbff-38cdbf15520d (old id 2493678)
date added to LUP
2012-05-11 15:17:04
date last changed
2017-01-01 03:05:10
@inproceedings{e418ee94-467d-4242-bbff-38cdbf15520d,
  abstract     = {Semiconductor devices are heavily dependent on dopant incorporation in order to control the electrical properties. In this paper we investigate the possibility of using gates wrapped around a nanowire (NW) channel as a way of tuning the Fermi level position, in certain cases removing the need for dopants and providing a more dynamical way of setting the device properties. InP NW devices with omega gates are fabricated, and a p-n junction is formed in a nominally intrinsic NW channel. In order to further increase the electrostatic control of the channel and other device properties, vertical devices are discussed as a promising way of implementing this type of device.},
  author       = {Storm, Kristian and Nylund, Gustav and Borgström, Magnus and Wallentin, Jesper and Fasth, Carina and Thelander, Claes and Samuelson, Lars},
  booktitle    = {Physics of Semiconductors: 30th International Conference on the Physics of Semiconductors},
  issn         = {1551-7616},
  keyword      = {Fermi level tuning,InP,wrap-gate,nanowire},
  language     = {eng},
  pages        = {279--280},
  publisher    = {American Institute of Physics},
  title        = {Dual-gate induced InP nanowire diode},
  url          = {http://dx.doi.org/10.1063/1.3666362},
  volume       = {1399},
  year         = {2011},
}