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GaAs-based Nanowires Studied by Low-Temperature Cathodoluminescence

Gustafsson, Anders LU ; Bolinsson, Jessica LU ; Ek, Martin LU orcid and Samuelson, Lars LU (2011) 17th International Conference on Microscopy of Semiconducting Materials 326. p.012042-012042
Abstract
We present cathodoluminescence data of nanowires (NWs) grown using size-selected gold particles as seeds. The NWs have a GaAs core with a diameter of 50 nm and a length of several mu m. The NWs in this study were generally covered with a shell of AlGaAs. With increasing growth temperature, the emission intensity increases significantly. From a variety of growth conditions, we conclude that the exposed sides of the NWs during growth play an important role in the emission intensity. The diffusion of carriers was studied by inserting a segment of GaInAs in GaAs NWs. By capping the NWs with an AlGaAs shell, we observe a tenfold increase in the diffusion length along the core.
Please use this url to cite or link to this publication:
author
; ; and
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
host publication
Journal of Physics: Conference Series
volume
326
pages
012042 - 012042
publisher
American Institute of Physics (AIP)
conference name
17th International Conference on Microscopy of Semiconducting Materials
conference dates
2011-04-04 - 2011-04-07
external identifiers
  • wos:000298668400042
  • scopus:82955242421
ISSN
1742-6596
1742-6588
DOI
10.1088/1742-6596/326/1/012042
language
English
LU publication?
yes
additional info
The information about affiliations in this record was updated in December 2015. The record was previously connected to the following departments: Solid State Physics (011013006), Polymer and Materials Chemistry (LTH) (011001041)
id
be147811-7ec7-46f6-8313-ae3f19282020 (old id 2494154)
date added to LUP
2016-04-01 10:05:36
date last changed
2021-02-17 07:00:10
@inproceedings{be147811-7ec7-46f6-8313-ae3f19282020,
  abstract     = {We present cathodoluminescence data of nanowires (NWs) grown using size-selected gold particles as seeds. The NWs have a GaAs core with a diameter of 50 nm and a length of several mu m. The NWs in this study were generally covered with a shell of AlGaAs. With increasing growth temperature, the emission intensity increases significantly. From a variety of growth conditions, we conclude that the exposed sides of the NWs during growth play an important role in the emission intensity. The diffusion of carriers was studied by inserting a segment of GaInAs in GaAs NWs. By capping the NWs with an AlGaAs shell, we observe a tenfold increase in the diffusion length along the core.},
  author       = {Gustafsson, Anders and Bolinsson, Jessica and Ek, Martin and Samuelson, Lars},
  booktitle    = {Journal of Physics: Conference Series},
  issn         = {1742-6596},
  language     = {eng},
  pages        = {012042--012042},
  publisher    = {American Institute of Physics (AIP)},
  title        = {GaAs-based Nanowires Studied by Low-Temperature Cathodoluminescence},
  url          = {http://dx.doi.org/10.1088/1742-6596/326/1/012042},
  doi          = {10.1088/1742-6596/326/1/012042},
  volume       = {326},
  year         = {2011},
}