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GaAs-based Nanowires Studied by Low-Temperature Cathodoluminescence

Gustafsson, Anders LU ; Bolinsson, Jessica LU ; Ek, Martin LU and Samuelson, Lars LU (2011) 17th International Conference on Microscopy of Semiconducting Materials In Journal of Physics: Conference Series 326. p.012042-012042
Abstract
We present cathodoluminescence data of nanowires (NWs) grown using size-selected gold particles as seeds. The NWs have a GaAs core with a diameter of 50 nm and a length of several mu m. The NWs in this study were generally covered with a shell of AlGaAs. With increasing growth temperature, the emission intensity increases significantly. From a variety of growth conditions, we conclude that the exposed sides of the NWs during growth play an important role in the emission intensity. The diffusion of carriers was studied by inserting a segment of GaInAs in GaAs NWs. By capping the NWs with an AlGaAs shell, we observe a tenfold increase in the diffusion length along the core.
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author
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
in
Journal of Physics: Conference Series
volume
326
pages
012042 - 012042
publisher
American Institute of Physics
conference name
17th International Conference on Microscopy of Semiconducting Materials
external identifiers
  • wos:000298668400042
  • scopus:82955242421
ISSN
1742-6588
1742-6596
DOI
10.1088/1742-6596/326/1/012042
language
English
LU publication?
yes
id
be147811-7ec7-46f6-8313-ae3f19282020 (old id 2494154)
date added to LUP
2012-05-11 13:42:15
date last changed
2017-01-01 03:16:03
@inproceedings{be147811-7ec7-46f6-8313-ae3f19282020,
  abstract     = {We present cathodoluminescence data of nanowires (NWs) grown using size-selected gold particles as seeds. The NWs have a GaAs core with a diameter of 50 nm and a length of several mu m. The NWs in this study were generally covered with a shell of AlGaAs. With increasing growth temperature, the emission intensity increases significantly. From a variety of growth conditions, we conclude that the exposed sides of the NWs during growth play an important role in the emission intensity. The diffusion of carriers was studied by inserting a segment of GaInAs in GaAs NWs. By capping the NWs with an AlGaAs shell, we observe a tenfold increase in the diffusion length along the core.},
  author       = {Gustafsson, Anders and Bolinsson, Jessica and Ek, Martin and Samuelson, Lars},
  booktitle    = {Journal of Physics: Conference Series},
  issn         = {1742-6588},
  language     = {eng},
  pages        = {012042--012042},
  publisher    = {American Institute of Physics},
  title        = {GaAs-based Nanowires Studied by Low-Temperature Cathodoluminescence},
  url          = {http://dx.doi.org/10.1088/1742-6596/326/1/012042},
  volume       = {326},
  year         = {2011},
}