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Tuneable 2D surface Bismuth incorporation on InAs nanosheets

Benter, Sandra LU ; Liu, Yi LU ; Maciel, Renan P. ; Ong, Chin Shen ; Linnala, Lassi ; Pan, Dong ; Irish, Austin LU ; Liu, Yen-Po LU ; Zhao, Jianhua and Xu, H. Q. LU , et al. (2023) In Nanoscale 15(21).
Abstract
The chemical bonding at the interface between compound semiconductors and metals is central in determining electronic and optical properties. In this study, new opportunities for controlling this are presented for nanostructures. We investigate Bi adsorption on 2D wurtzite InAs (112̄0) nanosheets and find that temperature-controlled Bi incorporation in either anionic- or cationic-like bonding is possible in the easily accesible range between room temperature and 400 °C. This separation could not be achieved for ordinary zinc blende InAs(110) surfaces. As the crystal structures of the two surfaces have identical nearest neighbour configurations, this indicates that overall geometric differences can significantly alter the adsorption and... (More)
The chemical bonding at the interface between compound semiconductors and metals is central in determining electronic and optical properties. In this study, new opportunities for controlling this are presented for nanostructures. We investigate Bi adsorption on 2D wurtzite InAs (112̄0) nanosheets and find that temperature-controlled Bi incorporation in either anionic- or cationic-like bonding is possible in the easily accesible range between room temperature and 400 °C. This separation could not be achieved for ordinary zinc blende InAs(110) surfaces. As the crystal structures of the two surfaces have identical nearest neighbour configurations, this indicates that overall geometric differences can significantly alter the adsorption and incorporation. Ab initio theoretical modelling confirms observed adsorption results, but indicate that both the formation energies as well as kinetic barriers contributes to the observed temperature dependent behaviour. Further, we find that the Bi adsorption rate can differ by at least 2.5 times between the two InAs surfaces while being negligible for standard Si substrates under similar deposition conditions. This, in combination with the observed interface control, provides an excellent opportunity for tuneable Bi integration on 2D InAs nanostructures on standard Si substrates. (Less)
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organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Nanoscale
volume
15
issue
21
publisher
Royal Society of Chemistry
external identifiers
  • scopus:85159644656
  • pmid:37190857
ISSN
2040-3372
DOI
10.1039/d3nr00454f
language
English
LU publication?
yes
id
2534a3e5-c0ca-41e7-a103-ce556171d541
date added to LUP
2023-08-31 11:03:50
date last changed
2023-11-08 10:28:24
@article{2534a3e5-c0ca-41e7-a103-ce556171d541,
  abstract     = {{The chemical bonding at the interface between compound semiconductors and metals is central in determining electronic and optical properties. In this study, new opportunities for controlling this are presented for nanostructures. We investigate Bi adsorption on 2D wurtzite InAs (112̄0) nanosheets and find that temperature-controlled Bi incorporation in either anionic- or cationic-like bonding is possible in the easily accesible range between room temperature and 400 °C. This separation could not be achieved for ordinary zinc blende InAs(110) surfaces. As the crystal structures of the two surfaces have identical nearest neighbour configurations, this indicates that overall geometric differences can significantly alter the adsorption and incorporation. Ab initio theoretical modelling confirms observed adsorption results, but indicate that both the formation energies as well as kinetic barriers contributes to the observed temperature dependent behaviour. Further, we find that the Bi adsorption rate can differ by at least 2.5 times between the two InAs surfaces while being negligible for standard Si substrates under similar deposition conditions. This, in combination with the observed interface control, provides an excellent opportunity for tuneable Bi integration on 2D InAs nanostructures on standard Si substrates.}},
  author       = {{Benter, Sandra and Liu, Yi and Maciel, Renan P. and Ong, Chin Shen and Linnala, Lassi and Pan, Dong and Irish, Austin and Liu, Yen-Po and Zhao, Jianhua and Xu, H. Q. and Eriksson, Olle and Timm, Rainer and Mikkelsen, Anders}},
  issn         = {{2040-3372}},
  language     = {{eng}},
  number       = {{21}},
  publisher    = {{Royal Society of Chemistry}},
  series       = {{Nanoscale}},
  title        = {{Tuneable 2D surface Bismuth incorporation on InAs nanosheets}},
  url          = {{http://dx.doi.org/10.1039/d3nr00454f}},
  doi          = {{10.1039/d3nr00454f}},
  volume       = {{15}},
  year         = {{2023}},
}