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Growth of GaP nanotree structures by sequential seeding of 1D nanowires

Dick Thelander, Kimberly LU ; Deppert, Knut LU ; Mårtensson, Thomas LU ; Seifert, Werner LU and Samuelson, Lars LU (2004) In Journal of Crystal Growth 272(1-4). p.131-137
Abstract
Complex nanostructures are becoming increasingly important for the development of nanoscale devices and functional nanomaterials. Precise control of size and morphology of these structures is critical to their fabrication and exploitation. We have developed a method for stepwise growth of tree-like nanostructures via the vapour liquid-solid (VLS) growth mode, demonstrated for III-V semiconductor materials. This method uses the initial seeding of nanowires by catalytic aerosol nanoparticles to form the trunk, followed by sequential seeding of branching structures. Here we present a detailed study of the growth of these complex structures using Gap. Diameter of each level of nanowires is directly determined by seed particle diameters, and... (More)
Complex nanostructures are becoming increasingly important for the development of nanoscale devices and functional nanomaterials. Precise control of size and morphology of these structures is critical to their fabrication and exploitation. We have developed a method for stepwise growth of tree-like nanostructures via the vapour liquid-solid (VLS) growth mode, demonstrated for III-V semiconductor materials. This method uses the initial seeding of nanowires by catalytic aerosol nanoparticles to form the trunk, followed by sequential seeding of branching structures. Here we present a detailed study of the growth of these complex structures using Gap. Diameter of each level of nanowires is directly determined by seed particle diameters, and number of branches is determined by seed particle density. Growth rate is shown to increase with temperature to a maximum corresponding to the temperature of complete decomposition of the Group-III precursor material, and subsequently decrease due to competition with bulk growth. Growth rate also depends on flow of the Group-III precursor, but not on the Group-V precursor. Finally, there is a relationship between the number of branches and their growth rate, suggesting that material diffusion plays a role in nanowire branch growth. (C) 2004 Elsevier B.V. All rights reserved. (Less)
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
semiconducting III-V, structures, metalorganic vapor phase epitaxy, materials
in
Journal of Crystal Growth
volume
272
issue
1-4
pages
131 - 137
publisher
Elsevier
external identifiers
  • wos:000225890300023
  • scopus:9944247497
ISSN
0022-0248
DOI
10.1016/j.jcrysgro.2004.09.004
language
English
LU publication?
yes
id
9188f766-70dd-48a6-b0cb-a967ef58a4aa (old id 258422)
date added to LUP
2007-10-24 11:13:53
date last changed
2017-05-21 04:27:09
@article{9188f766-70dd-48a6-b0cb-a967ef58a4aa,
  abstract     = {Complex nanostructures are becoming increasingly important for the development of nanoscale devices and functional nanomaterials. Precise control of size and morphology of these structures is critical to their fabrication and exploitation. We have developed a method for stepwise growth of tree-like nanostructures via the vapour liquid-solid (VLS) growth mode, demonstrated for III-V semiconductor materials. This method uses the initial seeding of nanowires by catalytic aerosol nanoparticles to form the trunk, followed by sequential seeding of branching structures. Here we present a detailed study of the growth of these complex structures using Gap. Diameter of each level of nanowires is directly determined by seed particle diameters, and number of branches is determined by seed particle density. Growth rate is shown to increase with temperature to a maximum corresponding to the temperature of complete decomposition of the Group-III precursor material, and subsequently decrease due to competition with bulk growth. Growth rate also depends on flow of the Group-III precursor, but not on the Group-V precursor. Finally, there is a relationship between the number of branches and their growth rate, suggesting that material diffusion plays a role in nanowire branch growth. (C) 2004 Elsevier B.V. All rights reserved.},
  author       = {Dick Thelander, Kimberly and Deppert, Knut and Mårtensson, Thomas and Seifert, Werner and Samuelson, Lars},
  issn         = {0022-0248},
  keyword      = {semiconducting III-V,structures,metalorganic vapor phase epitaxy,materials},
  language     = {eng},
  number       = {1-4},
  pages        = {131--137},
  publisher    = {Elsevier},
  series       = {Journal of Crystal Growth},
  title        = {Growth of GaP nanotree structures by sequential seeding of 1D nanowires},
  url          = {http://dx.doi.org/10.1016/j.jcrysgro.2004.09.004},
  volume       = {272},
  year         = {2004},
}