A study of estimation method for conduction band offset in semiconductor heterostructure by using triple-barrier resonant tunneling diodes
(2002) In Applied Surface Science 190(1-4). p.288-293- Abstract
- A method for evaluating a band offset of a heterojunction is proposed by measuring temperature dependence of current-voltage (I-V) characteristics in triple-barrier resonant tunneling diodes (TBRTDs). The method was applied for investigating a conduction band offset by using GaAs0.25P0.75/GaAs TBRTDs with thin strain heterobarriers grown by MOCVD and DeltaE(c) was estimated as 200-240 meV. In the strain-barrier TBRTDs, negative differential resistance was observed below 100 K. (C) 2002 Elsevier Science B.V. All rights reserved.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/334628
- author
- Ohki, S ; Funato, H ; Suhara, M ; Okumura, T ; Wernersson, Lars-Erik LU and Seifert, Werner LU
- organization
- publishing date
- 2002
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- heterointerface, strain barrier, band offset, GaAsP/GaAs, triple-barrier resonant tunneling diodes, thermionic emission
- in
- Applied Surface Science
- volume
- 190
- issue
- 1-4
- pages
- 288 - 293
- publisher
- Elsevier
- external identifiers
-
- wos:000176520700053
- scopus:0037042007
- ISSN
- 1873-5584
- DOI
- 10.1016/S0169-4332(01)00870-4
- language
- English
- LU publication?
- yes
- id
- 25c2e901-8769-44fb-b765-e6367ae9f002 (old id 334628)
- date added to LUP
- 2016-04-01 12:07:29
- date last changed
- 2022-01-26 23:08:34
@article{25c2e901-8769-44fb-b765-e6367ae9f002, abstract = {{A method for evaluating a band offset of a heterojunction is proposed by measuring temperature dependence of current-voltage (I-V) characteristics in triple-barrier resonant tunneling diodes (TBRTDs). The method was applied for investigating a conduction band offset by using GaAs0.25P0.75/GaAs TBRTDs with thin strain heterobarriers grown by MOCVD and DeltaE(c) was estimated as 200-240 meV. In the strain-barrier TBRTDs, negative differential resistance was observed below 100 K. (C) 2002 Elsevier Science B.V. All rights reserved.}}, author = {{Ohki, S and Funato, H and Suhara, M and Okumura, T and Wernersson, Lars-Erik and Seifert, Werner}}, issn = {{1873-5584}}, keywords = {{heterointerface; strain barrier; band offset; GaAsP/GaAs; triple-barrier resonant tunneling diodes; thermionic emission}}, language = {{eng}}, number = {{1-4}}, pages = {{288--293}}, publisher = {{Elsevier}}, series = {{Applied Surface Science}}, title = {{A study of estimation method for conduction band offset in semiconductor heterostructure by using triple-barrier resonant tunneling diodes}}, url = {{http://dx.doi.org/10.1016/S0169-4332(01)00870-4}}, doi = {{10.1016/S0169-4332(01)00870-4}}, volume = {{190}}, year = {{2002}}, }