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Resonant tunneling permeable base transistors with high transconductance

Lind, Erik LU ; Lindström, Peter LU and Wernersson, Lars-Erik LU (2004) In IEEE Electron Device Letters 25(10). p.678-680
Abstract
A GaAs-based resonant tunneling permeable base transistor has been developed and evaluated at room temperature. The transistor is fabricated by overgrowing a tungsten gate placed next to an AlGaAs-GaAs-InGaAs resonant tunneling heterostructure. By changing the gate voltage, the effective conducting area of the tunnel diode can be modulated and the collector-emitter current thus controlled. Peak currents above 300 mA/mm and a maximum transconductance of 270 mS/mm have been obtained.
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
resonant tunneling, gallium arsenide (GaAs), permeable base transistors, transistors, tungsten
in
IEEE Electron Device Letters
volume
25
issue
10
pages
678 - 680
publisher
IEEE--Institute of Electrical and Electronics Engineers Inc.
external identifiers
  • wos:000224106900004
  • scopus:4744339260
ISSN
0741-3106
DOI
10.1109/LED.2004.835159
language
English
LU publication?
yes
id
5f720f46-b677-4d95-877e-1a594867354c (old id 266422)
date added to LUP
2007-10-24 19:00:47
date last changed
2017-01-01 07:16:16
@article{5f720f46-b677-4d95-877e-1a594867354c,
  abstract     = {A GaAs-based resonant tunneling permeable base transistor has been developed and evaluated at room temperature. The transistor is fabricated by overgrowing a tungsten gate placed next to an AlGaAs-GaAs-InGaAs resonant tunneling heterostructure. By changing the gate voltage, the effective conducting area of the tunnel diode can be modulated and the collector-emitter current thus controlled. Peak currents above 300 mA/mm and a maximum transconductance of 270 mS/mm have been obtained.},
  author       = {Lind, Erik and Lindström, Peter and Wernersson, Lars-Erik},
  issn         = {0741-3106},
  keyword      = {resonant tunneling,gallium arsenide (GaAs),permeable base transistors,transistors,tungsten},
  language     = {eng},
  number       = {10},
  pages        = {678--680},
  publisher    = {IEEE--Institute of Electrical and Electronics Engineers Inc.},
  series       = {IEEE Electron Device Letters},
  title        = {Resonant tunneling permeable base transistors with high transconductance},
  url          = {http://dx.doi.org/10.1109/LED.2004.835159},
  volume       = {25},
  year         = {2004},
}