Particle-assisted GaxIn1-xP nanowire growth for designed bandgap structures
(2012) In Nanotechnology 23(24).- Abstract
- Non-tapered vertically straight GaxIn1-xP nanowires were grown in a compositional range from Ga0.2In0.8P to pure GaP in particle-assisted mode by controlling the trimethylindium, trimethylgallium and hydrogen chloride flows in metal-organic vapor phase epitaxy. X-ray energy dispersive spectroscopy in transmission electron microscopy revealed homogeneous radial material composition in single nanowires, whereas variations in the material composition were found along the nanowires. High-resolution x-ray diffraction indicates a variation of the material composition on the order of about 19% measuring an entire sample area, i.e., including edge effects during growth. The non-capped nanowires emit room temperature photoluminescence strongly in... (More)
- Non-tapered vertically straight GaxIn1-xP nanowires were grown in a compositional range from Ga0.2In0.8P to pure GaP in particle-assisted mode by controlling the trimethylindium, trimethylgallium and hydrogen chloride flows in metal-organic vapor phase epitaxy. X-ray energy dispersive spectroscopy in transmission electron microscopy revealed homogeneous radial material composition in single nanowires, whereas variations in the material composition were found along the nanowires. High-resolution x-ray diffraction indicates a variation of the material composition on the order of about 19% measuring an entire sample area, i.e., including edge effects during growth. The non-capped nanowires emit room temperature photoluminescence strongly in the energy range of 1.43-2.16 eV, correlated with the bandgap expected from the material composition. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/2891151
- author
- Jacobsson, Daniel LU ; Persson, J. M. ; Kriegner, D. ; Etzelstorfer, T. ; Wallentin, Jesper LU ; Wagner, Jakob LU ; Stangl, J. ; Samuelson, Lars LU ; Deppert, Knut LU and Borgström, Magnus LU
- organization
- publishing date
- 2012
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Nanotechnology
- volume
- 23
- issue
- 24
- article number
- 245601
- publisher
- IOP Publishing
- external identifiers
-
- wos:000305160500006
- scopus:84861610127
- ISSN
- 0957-4484
- DOI
- 10.1088/0957-4484/23/24/245601
- language
- English
- LU publication?
- yes
- additional info
- The information about affiliations in this record was updated in December 2015. The record was previously connected to the following departments: Polymer and Materials Chemistry (LTH) (011001041), Solid State Physics (011013006)
- id
- 4238f625-f6e8-45c4-a036-09cb87decb5b (old id 2891151)
- date added to LUP
- 2016-04-01 10:56:53
- date last changed
- 2023-11-10 09:10:29
@article{4238f625-f6e8-45c4-a036-09cb87decb5b, abstract = {{Non-tapered vertically straight GaxIn1-xP nanowires were grown in a compositional range from Ga0.2In0.8P to pure GaP in particle-assisted mode by controlling the trimethylindium, trimethylgallium and hydrogen chloride flows in metal-organic vapor phase epitaxy. X-ray energy dispersive spectroscopy in transmission electron microscopy revealed homogeneous radial material composition in single nanowires, whereas variations in the material composition were found along the nanowires. High-resolution x-ray diffraction indicates a variation of the material composition on the order of about 19% measuring an entire sample area, i.e., including edge effects during growth. The non-capped nanowires emit room temperature photoluminescence strongly in the energy range of 1.43-2.16 eV, correlated with the bandgap expected from the material composition.}}, author = {{Jacobsson, Daniel and Persson, J. M. and Kriegner, D. and Etzelstorfer, T. and Wallentin, Jesper and Wagner, Jakob and Stangl, J. and Samuelson, Lars and Deppert, Knut and Borgström, Magnus}}, issn = {{0957-4484}}, language = {{eng}}, number = {{24}}, publisher = {{IOP Publishing}}, series = {{Nanotechnology}}, title = {{Particle-assisted GaxIn1-xP nanowire growth for designed bandgap structures}}, url = {{http://dx.doi.org/10.1088/0957-4484/23/24/245601}}, doi = {{10.1088/0957-4484/23/24/245601}}, volume = {{23}}, year = {{2012}}, }