Advanced

Particle-assisted GaxIn1-xP nanowire growth for designed bandgap structures

Jacobsson, Daniel LU ; Persson, J. M.; Kriegner, D.; Etzelstorfer, T.; Wallentin, Jesper LU ; Wagner, Jakob LU ; Stangl, J.; Samuelson, Lars LU ; Deppert, Knut LU and Borgström, Magnus LU (2012) In Nanotechnology 23(24).
Abstract
Non-tapered vertically straight GaxIn1-xP nanowires were grown in a compositional range from Ga0.2In0.8P to pure GaP in particle-assisted mode by controlling the trimethylindium, trimethylgallium and hydrogen chloride flows in metal-organic vapor phase epitaxy. X-ray energy dispersive spectroscopy in transmission electron microscopy revealed homogeneous radial material composition in single nanowires, whereas variations in the material composition were found along the nanowires. High-resolution x-ray diffraction indicates a variation of the material composition on the order of about 19% measuring an entire sample area, i.e., including edge effects during growth. The non-capped nanowires emit room temperature photoluminescence strongly in... (More)
Non-tapered vertically straight GaxIn1-xP nanowires were grown in a compositional range from Ga0.2In0.8P to pure GaP in particle-assisted mode by controlling the trimethylindium, trimethylgallium and hydrogen chloride flows in metal-organic vapor phase epitaxy. X-ray energy dispersive spectroscopy in transmission electron microscopy revealed homogeneous radial material composition in single nanowires, whereas variations in the material composition were found along the nanowires. High-resolution x-ray diffraction indicates a variation of the material composition on the order of about 19% measuring an entire sample area, i.e., including edge effects during growth. The non-capped nanowires emit room temperature photoluminescence strongly in the energy range of 1.43-2.16 eV, correlated with the bandgap expected from the material composition. (Less)
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Nanotechnology
volume
23
issue
24
publisher
IOP Publishing
external identifiers
  • wos:000305160500006
  • scopus:84861610127
ISSN
0957-4484
DOI
10.1088/0957-4484/23/24/245601
language
English
LU publication?
yes
id
4238f625-f6e8-45c4-a036-09cb87decb5b (old id 2891151)
date added to LUP
2012-07-25 17:19:17
date last changed
2017-11-12 03:14:03
@article{4238f625-f6e8-45c4-a036-09cb87decb5b,
  abstract     = {Non-tapered vertically straight GaxIn1-xP nanowires were grown in a compositional range from Ga0.2In0.8P to pure GaP in particle-assisted mode by controlling the trimethylindium, trimethylgallium and hydrogen chloride flows in metal-organic vapor phase epitaxy. X-ray energy dispersive spectroscopy in transmission electron microscopy revealed homogeneous radial material composition in single nanowires, whereas variations in the material composition were found along the nanowires. High-resolution x-ray diffraction indicates a variation of the material composition on the order of about 19% measuring an entire sample area, i.e., including edge effects during growth. The non-capped nanowires emit room temperature photoluminescence strongly in the energy range of 1.43-2.16 eV, correlated with the bandgap expected from the material composition.},
  articleno    = {245601},
  author       = {Jacobsson, Daniel and Persson, J. M. and Kriegner, D. and Etzelstorfer, T. and Wallentin, Jesper and Wagner, Jakob and Stangl, J. and Samuelson, Lars and Deppert, Knut and Borgström, Magnus},
  issn         = {0957-4484},
  language     = {eng},
  number       = {24},
  publisher    = {IOP Publishing},
  series       = {Nanotechnology},
  title        = {Particle-assisted GaxIn1-xP nanowire growth for designed bandgap structures},
  url          = {http://dx.doi.org/10.1088/0957-4484/23/24/245601},
  volume       = {23},
  year         = {2012},
}