High resolution scanning gate microscopy measurements on InAs/GaSb nanowire Esaki diode devices
Webb, James LU ; Persson, Olof LU ; Dick Thelander, Kimberly LU ; Thelander, Claes LU ; Timm, Rainer LU
and Mikkelsen, Anders
LU
(2014)
In Nano Reseach
7(6).
p.877-887
- Abstract
- Gated transport measurements are the backbone of electrical characterization of nanoscale electronic devices. Scanning gate microscopy (SGM) is one such gating technique that adds crucial spatial information, accessing the localized properties of semiconductor devices. Nanowires represent a central device concept due to the potential to combine very different materials. However, SGM on semiconductor nanowires has been limited to a resolution in the 50-100 nm range. Here, we present a study by SGM of newly developed III-V semiconductor nanowire InAs/GaSb heterojunction Esaki tunnel diode devices under ultra-high vacuum. Sub-5 nm resolution is demonstrated at room temperature via use of quartz resonator atomic force microscopy sensors, with... (More)
- Gated transport measurements are the backbone of electrical characterization of nanoscale electronic devices. Scanning gate microscopy (SGM) is one such gating technique that adds crucial spatial information, accessing the localized properties of semiconductor devices. Nanowires represent a central device concept due to the potential to combine very different materials. However, SGM on semiconductor nanowires has been limited to a resolution in the 50-100 nm range. Here, we present a study by SGM of newly developed III-V semiconductor nanowire InAs/GaSb heterojunction Esaki tunnel diode devices under ultra-high vacuum. Sub-5 nm resolution is demonstrated at room temperature via use of quartz resonator atomic force microscopy sensors, with the capability to resolve InAs nanowire facets, the InAs/GaSb tunnel diode transition and nanoscale defects on the device. We demonstrate that such measurements can rapidly give important insight into the device properties via use of a simplified physical model, without the requirement for extensive calculation of the electrostatics of the system. Interestingly, by precise spatial correlation of the device electrical transport properties and surface structure we show the position and existence of a very abrupt (<10 nm) electrical transition across the InAs/GaSb junction despite the change in material composition occurring only over 30-50 nm. The direct and simultaneous link between nanostructure composition and electrical properties helps set important limits for the precision in structural control needed to achieve desired device performance. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/4667913
- author
- Webb, James
LU
; Persson, Olof
LU
; Dick Thelander, Kimberly
LU
; Thelander, Claes
LU
; Timm, Rainer
LU
and Mikkelsen, Anders
LU
- organization
- publishing date
- 2014
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- nanowire, scanning gate microscopy, Esaki tunnel diode, InAs, GaSb, III-V, heterostructure
- in
- Nano Reseach
- volume
- 7
- issue
- 6
- pages
- 877 - 887
- publisher
- Springer
- external identifiers
-
- wos:000339892000009
- scopus:84902319847
- ISSN
- 1998-0124
- DOI
- 10.1007/s12274-014-0449-4
- language
- English
- LU publication?
- yes
- id
- 28ce09f3-7a63-486a-8583-197c4b2c559d (old id 4667913)
- date added to LUP
- 2016-04-01 09:49:27
- date last changed
- 2023-11-09 05:03:58
@article{28ce09f3-7a63-486a-8583-197c4b2c559d,
abstract = {{Gated transport measurements are the backbone of electrical characterization of nanoscale electronic devices. Scanning gate microscopy (SGM) is one such gating technique that adds crucial spatial information, accessing the localized properties of semiconductor devices. Nanowires represent a central device concept due to the potential to combine very different materials. However, SGM on semiconductor nanowires has been limited to a resolution in the 50-100 nm range. Here, we present a study by SGM of newly developed III-V semiconductor nanowire InAs/GaSb heterojunction Esaki tunnel diode devices under ultra-high vacuum. Sub-5 nm resolution is demonstrated at room temperature via use of quartz resonator atomic force microscopy sensors, with the capability to resolve InAs nanowire facets, the InAs/GaSb tunnel diode transition and nanoscale defects on the device. We demonstrate that such measurements can rapidly give important insight into the device properties via use of a simplified physical model, without the requirement for extensive calculation of the electrostatics of the system. Interestingly, by precise spatial correlation of the device electrical transport properties and surface structure we show the position and existence of a very abrupt (<10 nm) electrical transition across the InAs/GaSb junction despite the change in material composition occurring only over 30-50 nm. The direct and simultaneous link between nanostructure composition and electrical properties helps set important limits for the precision in structural control needed to achieve desired device performance.}},
author = {{Webb, James and Persson, Olof and Dick Thelander, Kimberly and Thelander, Claes and Timm, Rainer and Mikkelsen, Anders}},
issn = {{1998-0124}},
keywords = {{nanowire; scanning gate microscopy; Esaki tunnel diode; InAs; GaSb; III-V; heterostructure}},
language = {{eng}},
number = {{6}},
pages = {{877--887}},
publisher = {{Springer}},
series = {{Nano Reseach}},
title = {{High resolution scanning gate microscopy measurements on InAs/GaSb nanowire Esaki diode devices}},
url = {{http://dx.doi.org/10.1007/s12274-014-0449-4}},
doi = {{10.1007/s12274-014-0449-4}},
volume = {{7}},
year = {{2014}},
}