Self-aligned gate-last surface channel In0.53Ga0.47As MOSFET with selectively regrown source and drain contact layers
(2011) 69th Device Research Conference, DRC 2011- Abstract
III-V MOSFETs are currently being considered as a candidate for future high performance transistors [1]. In particular, In1-xGaxAs compounds are investigated for application in digital logic due to their advantageous electronic properties [2]. III-V technologies may be introduced beyond the 22 nm node, which will require a self aligned III/V device architecture as well as integration of high-¿ gate oxides.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/2953d701-99c4-4974-9ac9-bb75d68ee714
- author
- Egard, Mikael LU ; Ohlsson, Lars LU ; Borg, B. LU ; Wernersson, Lars Erik LU and Lind, Erik LU
- organization
- publishing date
- 2011-12-01
- type
- Chapter in Book/Report/Conference proceeding
- publication status
- published
- subject
- host publication
- 69th Device Research Conference, DRC 2011 - Conference Digest
- article number
- 6086641
- publisher
- IEEE - Institute of Electrical and Electronics Engineers Inc.
- conference name
- 69th Device Research Conference, DRC 2011
- conference location
- Santa Barbara, CA, United States
- conference dates
- 2011-06-20 - 2011-06-22
- external identifiers
-
- scopus:84880719052
- ISBN
- 9781612842417
- DOI
- 10.1109/DRC.2011.6086641
- language
- English
- LU publication?
- yes
- id
- 2953d701-99c4-4974-9ac9-bb75d68ee714
- date added to LUP
- 2019-06-17 12:21:06
- date last changed
- 2024-01-01 10:53:33
@inproceedings{2953d701-99c4-4974-9ac9-bb75d68ee714, abstract = {{<p>III-V MOSFETs are currently being considered as a candidate for future high performance transistors [1]. In particular, In1-xGaxAs compounds are investigated for application in digital logic due to their advantageous electronic properties [2]. III-V technologies may be introduced beyond the 22 nm node, which will require a self aligned III/V device architecture as well as integration of high-¿ gate oxides.</p>}}, author = {{Egard, Mikael and Ohlsson, Lars and Borg, B. and Wernersson, Lars Erik and Lind, Erik}}, booktitle = {{69th Device Research Conference, DRC 2011 - Conference Digest}}, isbn = {{9781612842417}}, language = {{eng}}, month = {{12}}, publisher = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}}, title = {{Self-aligned gate-last surface channel In<sub>0.53</sub>Ga<sub>0.47</sub>As MOSFET with selectively regrown source and drain contact layers}}, url = {{http://dx.doi.org/10.1109/DRC.2011.6086641}}, doi = {{10.1109/DRC.2011.6086641}}, year = {{2011}}, }