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Self-aligned gate-last surface channel In0.53Ga0.47As MOSFET with selectively regrown source and drain contact layers

Egard, Mikael LU ; Ohlsson, Lars LU orcid ; Borg, B. LU ; Wernersson, Lars Erik LU and Lind, Erik LU (2011) 69th Device Research Conference, DRC 2011
Abstract

III-V MOSFETs are currently being considered as a candidate for future high performance transistors [1]. In particular, In1-xGaxAs compounds are investigated for application in digital logic due to their advantageous electronic properties [2]. III-V technologies may be introduced beyond the 22 nm node, which will require a self aligned III/V device architecture as well as integration of high-¿ gate oxides.

Please use this url to cite or link to this publication:
author
; ; ; and
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
host publication
69th Device Research Conference, DRC 2011 - Conference Digest
article number
6086641
publisher
IEEE - Institute of Electrical and Electronics Engineers Inc.
conference name
69th Device Research Conference, DRC 2011
conference location
Santa Barbara, CA, United States
conference dates
2011-06-20 - 2011-06-22
external identifiers
  • scopus:84880719052
ISBN
9781612842417
DOI
10.1109/DRC.2011.6086641
language
English
LU publication?
yes
id
2953d701-99c4-4974-9ac9-bb75d68ee714
date added to LUP
2019-06-17 12:21:06
date last changed
2021-08-04 03:45:02
@inproceedings{2953d701-99c4-4974-9ac9-bb75d68ee714,
  abstract     = {<p>III-V MOSFETs are currently being considered as a candidate for future high performance transistors [1]. In particular, In1-xGaxAs compounds are investigated for application in digital logic due to their advantageous electronic properties [2]. III-V technologies may be introduced beyond the 22 nm node, which will require a self aligned III/V device architecture as well as integration of high-¿ gate oxides.</p>},
  author       = {Egard, Mikael and Ohlsson, Lars and Borg, B. and Wernersson, Lars Erik and Lind, Erik},
  booktitle    = {69th Device Research Conference, DRC 2011 - Conference Digest},
  isbn         = {9781612842417},
  language     = {eng},
  month        = {12},
  publisher    = {IEEE - Institute of Electrical and Electronics Engineers Inc.},
  title        = {Self-aligned gate-last surface channel In<sub>0.53</sub>Ga<sub>0.47</sub>As MOSFET with selectively regrown source and drain contact layers},
  url          = {http://dx.doi.org/10.1109/DRC.2011.6086641},
  doi          = {10.1109/DRC.2011.6086641},
  year         = {2011},
}