Thin-Film Growth and Oxidation of Surfaces Under Relevant Pressure Conditions
Schnadt, Joachim LU
; Knudsen, Jan
LU
and Shavorskiy, Andrey
LU
(2018)
1.
p.699-710
- Abstract
- The growth of oxides and thin films is important in a wide range of applications, including coating technology, production of solar cell materials, and formation of dielectric layers in the semiconductor industry. These growth processes necessitate the interaction of a solid surface with a gas/vapor or liquid phase. The chemical processes that take place during the interaction of the solid with the second phase have direct impact on the properties of the oxides and films grown, which implies that a true atomic- and molecular-scale understanding of the processes is highly desirable. A true understanding can only be achieved from a monitoring of the phase interfaces at pressures that allow the chemistry to proceed, that is, at relevant... (More)
- The growth of oxides and thin films is important in a wide range of applications, including coating technology, production of solar cell materials, and formation of dielectric layers in the semiconductor industry. These growth processes necessitate the interaction of a solid surface with a gas/vapor or liquid phase. The chemical processes that take place during the interaction of the solid with the second phase have direct impact on the properties of the oxides and films grown, which implies that a true atomic- and molecular-scale understanding of the processes is highly desirable. A true understanding can only be achieved from a monitoring of the phase interfaces at pressures that allow the chemistry to proceed, that is, at relevant pressures. Preferably, monitoring takes place in real time, allowing the identification of atomic and molecular species and a recording of the chemical kinetics. Such monitoring is possible by in situ and operando methods, that is, methods which can be carried out at relevant pressures rather than in vacuum. Limiting ourselves to the solid/vapor interface, we discuss a few of the most important experimental in situ and operando methods and provides examples for their application in the domains of oxidation and thin-film growth. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/2b6889f4-f96c-47a7-bc45-b5f453a45907
- author
- Schnadt, Joachim
LU
; Knudsen, Jan
LU
and Shavorskiy, Andrey
LU
- organization
- publishing date
- 2018
- type
- Chapter in Book/Report/Conference proceeding
- publication status
- published
- subject
- keywords
- Ambient pressure x-ray photoelectron spectroscopy, Atomic layer deposition, Chemical vapor deposition, In situ, Operando, Oxidation, Oxide growth, Polarization-modulation infrared reflection absorption spectroscopy, Surface science, Surface x-ray diffraction, Thin-film growth
- host publication
- Encyclopedia of Interfacial Chemistry: Surface Science and Electrochemistry : Thin-Film Growth and Oxidation of Surfaces Under Relevant Pressure Conditions - Thin-Film Growth and Oxidation of Surfaces Under Relevant Pressure Conditions
- editor
- Wandelt, Klaus
- volume
- 1
- edition
- 1
- pages
- 12 pages
- publisher
- Elsevier
- external identifiers
-
- scopus:85079252942
- ISBN
- 9780128098943
- 9780128097397
- DOI
- 10.1016/B978-0-12-409547-2.13748-5
- language
- English
- LU publication?
- yes
- id
- 2b6889f4-f96c-47a7-bc45-b5f453a45907
- date added to LUP
- 2019-05-10 19:56:40
- date last changed
- 2024-01-15 18:53:45
@inbook{2b6889f4-f96c-47a7-bc45-b5f453a45907,
abstract = {{The growth of oxides and thin films is important in a wide range of applications, including coating technology, production of solar cell materials, and formation of dielectric layers in the semiconductor industry. These growth processes necessitate the interaction of a solid surface with a gas/vapor or liquid phase. The chemical processes that take place during the interaction of the solid with the second phase have direct impact on the properties of the oxides and films grown, which implies that a true atomic- and molecular-scale understanding of the processes is highly desirable. A true understanding can only be achieved from a monitoring of the phase interfaces at pressures that allow the chemistry to proceed, that is, at relevant pressures. Preferably, monitoring takes place in real time, allowing the identification of atomic and molecular species and a recording of the chemical kinetics. Such monitoring is possible by in situ and operando methods, that is, methods which can be carried out at relevant pressures rather than in vacuum. Limiting ourselves to the solid/vapor interface, we discuss a few of the most important experimental in situ and operando methods and provides examples for their application in the domains of oxidation and thin-film growth.}},
author = {{Schnadt, Joachim and Knudsen, Jan and Shavorskiy, Andrey}},
booktitle = {{Encyclopedia of Interfacial Chemistry: Surface Science and Electrochemistry : Thin-Film Growth and Oxidation of Surfaces Under Relevant Pressure Conditions}},
editor = {{Wandelt, Klaus}},
isbn = {{9780128098943}},
keywords = {{Ambient pressure x-ray photoelectron spectroscopy; Atomic layer deposition; Chemical vapor deposition; In situ; Operando; Oxidation; Oxide growth; Polarization-modulation infrared reflection absorption spectroscopy; Surface science; Surface x-ray diffraction; Thin-film growth}},
language = {{eng}},
pages = {{699--710}},
publisher = {{Elsevier}},
title = {{Thin-Film Growth and Oxidation of Surfaces Under Relevant Pressure Conditions}},
url = {{http://dx.doi.org/10.1016/B978-0-12-409547-2.13748-5}},
doi = {{10.1016/B978-0-12-409547-2.13748-5}},
volume = {{1}},
year = {{2018}},
}