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Geometric model for metalorganic vapour phase epitaxy of dense nanowire arrays

Borg, Mattias LU ; Johansson, Jonas LU ; Storm, Kristian LU and Deppert, Knut LU (2013) In Journal of Crystal Growth 366. p.15-19
Abstract
We propose a geometric model to estimate the contribution of substrate surface diffusion to growth of dense nanowire arrays using metalorganic vapour phase epitaxy. It is shown that the nanowire mantle area becomes the most significant collector of growth material when the nanowire diameter is large and the inter-nanowire pitch is small. It is concluded that this growth regime is important for the array geometries typically used for optoelectronic and photovoltaic applications of nanowires. The growth rate under these conditions is also not constant with time, due to the growing nanowire mantle area. This result was confirmed by experiments in which dense arrays of InAs nanowires were grown and the nanowire growth rate was measured as a... (More)
We propose a geometric model to estimate the contribution of substrate surface diffusion to growth of dense nanowire arrays using metalorganic vapour phase epitaxy. It is shown that the nanowire mantle area becomes the most significant collector of growth material when the nanowire diameter is large and the inter-nanowire pitch is small. It is concluded that this growth regime is important for the array geometries typically used for optoelectronic and photovoltaic applications of nanowires. The growth rate under these conditions is also not constant with time, due to the growing nanowire mantle area. This result was confirmed by experiments in which dense arrays of InAs nanowires were grown and the nanowire growth rate was measured as a function of time. (C) 2013 Elsevier B.V. All rights reserved. (Less)
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author
organization
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type
Contribution to journal
publication status
published
subject
keywords
Diffusion, Growth models, Nanostructures, Nanowires, Metalorganic, chemical vapor deposition, Nanomaterials
in
Journal of Crystal Growth
volume
366
pages
15 - 19
publisher
Elsevier
external identifiers
  • wos:000314824800003
  • scopus:84888370723
ISSN
0022-0248
DOI
10.1016/j.jcrysgro.2012.12.142
language
English
LU publication?
yes
id
2f715a8b-ba7c-4040-83d0-6204e0c6e505 (old id 3577033)
date added to LUP
2016-04-01 14:04:01
date last changed
2020-01-12 14:43:14
@article{2f715a8b-ba7c-4040-83d0-6204e0c6e505,
  abstract     = {We propose a geometric model to estimate the contribution of substrate surface diffusion to growth of dense nanowire arrays using metalorganic vapour phase epitaxy. It is shown that the nanowire mantle area becomes the most significant collector of growth material when the nanowire diameter is large and the inter-nanowire pitch is small. It is concluded that this growth regime is important for the array geometries typically used for optoelectronic and photovoltaic applications of nanowires. The growth rate under these conditions is also not constant with time, due to the growing nanowire mantle area. This result was confirmed by experiments in which dense arrays of InAs nanowires were grown and the nanowire growth rate was measured as a function of time. (C) 2013 Elsevier B.V. All rights reserved.},
  author       = {Borg, Mattias and Johansson, Jonas and Storm, Kristian and Deppert, Knut},
  issn         = {0022-0248},
  language     = {eng},
  pages        = {15--19},
  publisher    = {Elsevier},
  series       = {Journal of Crystal Growth},
  title        = {Geometric model for metalorganic vapour phase epitaxy of dense nanowire arrays},
  url          = {http://dx.doi.org/10.1016/j.jcrysgro.2012.12.142},
  doi          = {10.1016/j.jcrysgro.2012.12.142},
  volume       = {366},
  year         = {2013},
}