Spin-polarized electron tunneling across a Si delta-doped GaMnAs/n-GaAs interface
(2003) In Applied Physics Reviews 94(6). p.3990-3994- Abstract
- We study the spin-polarized tunneling of electrons from the valence band of GaMnAs into the conduction band of n-type GaAs with Si delta-doping at the interface. The injection of spin-polarized electrons is detected as circular polarized emission from a GaInAs/GaAs quantum well light emitting diode, corresponding to magneto-optical Kerr effect loops. The angular momentum selection rules are simplified by the strain-induced heavy-hole/light-hole splitting, allowing a direct relation between circular polarization and spin-polarization. Comparison with the influence of Zeeman splitting allow us to conclude a spin-injection from the majority spin-band.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/300149
- author
- Andresen, SE ; Sorensen, BS ; Rasmussen, FB ; Lindelof, PE ; Sadowski, Janusz LU ; Guertler, CM and Bland, JAC
- organization
- publishing date
- 2003
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Applied Physics Reviews
- volume
- 94
- issue
- 6
- pages
- 3990 - 3994
- publisher
- American Institute of Physics (AIP)
- external identifiers
-
- wos:000185419600045
- scopus:0141886914
- ISSN
- 1931-9401
- DOI
- 10.1063/1.1602945
- language
- English
- LU publication?
- yes
- id
- 7a7a9015-7287-4d11-af88-bb2e43e7e120 (old id 300149)
- date added to LUP
- 2016-04-01 12:18:57
- date last changed
- 2022-01-27 01:56:11
@article{7a7a9015-7287-4d11-af88-bb2e43e7e120, abstract = {{We study the spin-polarized tunneling of electrons from the valence band of GaMnAs into the conduction band of n-type GaAs with Si delta-doping at the interface. The injection of spin-polarized electrons is detected as circular polarized emission from a GaInAs/GaAs quantum well light emitting diode, corresponding to magneto-optical Kerr effect loops. The angular momentum selection rules are simplified by the strain-induced heavy-hole/light-hole splitting, allowing a direct relation between circular polarization and spin-polarization. Comparison with the influence of Zeeman splitting allow us to conclude a spin-injection from the majority spin-band.}}, author = {{Andresen, SE and Sorensen, BS and Rasmussen, FB and Lindelof, PE and Sadowski, Janusz and Guertler, CM and Bland, JAC}}, issn = {{1931-9401}}, language = {{eng}}, number = {{6}}, pages = {{3990--3994}}, publisher = {{American Institute of Physics (AIP)}}, series = {{Applied Physics Reviews}}, title = {{Spin-polarized electron tunneling across a Si delta-doped GaMnAs/n-GaAs interface}}, url = {{http://dx.doi.org/10.1063/1.1602945}}, doi = {{10.1063/1.1602945}}, volume = {{94}}, year = {{2003}}, }