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Spin-polarized electron tunneling across a Si delta-doped GaMnAs/n-GaAs interface

Andresen, SE; Sorensen, BS; Rasmussen, FB; Lindelof, PE; Sadowski, Janusz LU ; Guertler, CM and Bland, JAC (2003) In Applied Physics Reviews 94(6). p.3990-3994
Abstract
We study the spin-polarized tunneling of electrons from the valence band of GaMnAs into the conduction band of n-type GaAs with Si delta-doping at the interface. The injection of spin-polarized electrons is detected as circular polarized emission from a GaInAs/GaAs quantum well light emitting diode, corresponding to magneto-optical Kerr effect loops. The angular momentum selection rules are simplified by the strain-induced heavy-hole/light-hole splitting, allowing a direct relation between circular polarization and spin-polarization. Comparison with the influence of Zeeman splitting allow us to conclude a spin-injection from the majority spin-band.
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Applied Physics Reviews
volume
94
issue
6
pages
3990 - 3994
publisher
American Institute of Physics
external identifiers
  • wos:000185419600045
  • scopus:0141886914
ISSN
0021-8979
DOI
10.1063/1.1602945
language
English
LU publication?
yes
id
7a7a9015-7287-4d11-af88-bb2e43e7e120 (old id 300149)
date added to LUP
2007-08-22 12:38:42
date last changed
2017-05-21 03:41:49
@article{7a7a9015-7287-4d11-af88-bb2e43e7e120,
  abstract     = {We study the spin-polarized tunneling of electrons from the valence band of GaMnAs into the conduction band of n-type GaAs with Si delta-doping at the interface. The injection of spin-polarized electrons is detected as circular polarized emission from a GaInAs/GaAs quantum well light emitting diode, corresponding to magneto-optical Kerr effect loops. The angular momentum selection rules are simplified by the strain-induced heavy-hole/light-hole splitting, allowing a direct relation between circular polarization and spin-polarization. Comparison with the influence of Zeeman splitting allow us to conclude a spin-injection from the majority spin-band.},
  author       = {Andresen, SE and Sorensen, BS and Rasmussen, FB and Lindelof, PE and Sadowski, Janusz and Guertler, CM and Bland, JAC},
  issn         = {0021-8979},
  language     = {eng},
  number       = {6},
  pages        = {3990--3994},
  publisher    = {American Institute of Physics},
  series       = {Applied Physics Reviews},
  title        = {Spin-polarized electron tunneling across a Si delta-doped GaMnAs/n-GaAs interface},
  url          = {http://dx.doi.org/10.1063/1.1602945},
  volume       = {94},
  year         = {2003},
}