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Sharp exciton emission from single InAs quantum dots in GaAs nanowires

Panev, Nikolay LU ; Persson, Ann LU ; Sköld, Niklas LU and Samuelson, Lars LU (2003) In Applied Physics Letters 83(11). p.2238-2240
Abstract
We have performed photoluminescence spectroscopy on single GaAs nanowires with InAs quantum dots in the form of thin slices of InAs, possibly alloyed with Ga as InGaAs, incorporated into the GaAs. The nanowires were grown by chemical beam epitaxy using gold nanoparticles as catalysts. The photoluminescence measurements showed rich spectra consisting of sharp lines with energies and excitation power dependency behavior very similar to that observed for Stranski-Krastanow-grown InAs/GaAs quantum dots. By reducing the excitation power density we were able to obtain a quantum dot spectrum consisting of only one single sharp line-the exciton line. (C) 2003 American Institute of Physics.
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Applied Physics Letters
volume
83
issue
11
pages
2238 - 2240
publisher
American Institute of Physics
external identifiers
  • wos:000185231000050
  • scopus:0142026350
ISSN
0003-6951
DOI
10.1063/1.1611261
language
English
LU publication?
yes
id
a85f9cca-a072-4593-a25e-cf478665a2c9 (old id 301472)
date added to LUP
2007-09-20 08:20:43
date last changed
2018-01-07 05:39:06
@article{a85f9cca-a072-4593-a25e-cf478665a2c9,
  abstract     = {We have performed photoluminescence spectroscopy on single GaAs nanowires with InAs quantum dots in the form of thin slices of InAs, possibly alloyed with Ga as InGaAs, incorporated into the GaAs. The nanowires were grown by chemical beam epitaxy using gold nanoparticles as catalysts. The photoluminescence measurements showed rich spectra consisting of sharp lines with energies and excitation power dependency behavior very similar to that observed for Stranski-Krastanow-grown InAs/GaAs quantum dots. By reducing the excitation power density we were able to obtain a quantum dot spectrum consisting of only one single sharp line-the exciton line. (C) 2003 American Institute of Physics.},
  author       = {Panev, Nikolay and Persson, Ann and Sköld, Niklas and Samuelson, Lars},
  issn         = {0003-6951},
  language     = {eng},
  number       = {11},
  pages        = {2238--2240},
  publisher    = {American Institute of Physics},
  series       = {Applied Physics Letters},
  title        = {Sharp exciton emission from single InAs quantum dots in GaAs nanowires},
  url          = {http://dx.doi.org/10.1063/1.1611261},
  volume       = {83},
  year         = {2003},
}