Advanced

Unidirectional electron flow in a nanometer-scale semiconductor channel: A self-switching device

Song, Aimin LU ; Missous, M; Omling, Pär LU ; Peaker, AR; Samuelson, Lars LU and Seifert, Werner LU (2003) In Applied Physics Letters 83(9). p.1881-1883
Abstract
By tailoring the boundary of a narrow semiconductor channel to break its symmetry, we have realized a type of nanometer-scale nonlinear device, which we refer to as self-switching device (SSD). An applied voltage V not only changes the potential profile along the channel direction, but also either widens or narrows the effective channel depending on the sign of V. This results in a diode-like characteristic but without the use of any doping junction or barrier structure. The turn-on voltage can also be widely tuned from virtually zero to more than 10 V, by simply adjusting the channel width. The planar and two-terminal structure of the SSD also allows SSD-based circuits to be realized by only one step of lithography. (C) 2003 American... (More)
By tailoring the boundary of a narrow semiconductor channel to break its symmetry, we have realized a type of nanometer-scale nonlinear device, which we refer to as self-switching device (SSD). An applied voltage V not only changes the potential profile along the channel direction, but also either widens or narrows the effective channel depending on the sign of V. This results in a diode-like characteristic but without the use of any doping junction or barrier structure. The turn-on voltage can also be widely tuned from virtually zero to more than 10 V, by simply adjusting the channel width. The planar and two-terminal structure of the SSD also allows SSD-based circuits to be realized by only one step of lithography. (C) 2003 American Institute of Physics. (Less)
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Applied Physics Letters
volume
83
issue
9
pages
1881 - 1883
publisher
American Institute of Physics
external identifiers
  • wos:000184992000065
  • scopus:0141634015
ISSN
0003-6951
DOI
10.1063/1.1606881
language
English
LU publication?
yes
id
6175f1c0-b182-4245-bf16-877d13b2f35e (old id 302348)
date added to LUP
2007-09-22 11:50:22
date last changed
2018-10-03 10:36:33
@article{6175f1c0-b182-4245-bf16-877d13b2f35e,
  abstract     = {By tailoring the boundary of a narrow semiconductor channel to break its symmetry, we have realized a type of nanometer-scale nonlinear device, which we refer to as self-switching device (SSD). An applied voltage V not only changes the potential profile along the channel direction, but also either widens or narrows the effective channel depending on the sign of V. This results in a diode-like characteristic but without the use of any doping junction or barrier structure. The turn-on voltage can also be widely tuned from virtually zero to more than 10 V, by simply adjusting the channel width. The planar and two-terminal structure of the SSD also allows SSD-based circuits to be realized by only one step of lithography. (C) 2003 American Institute of Physics.},
  author       = {Song, Aimin and Missous, M and Omling, Pär and Peaker, AR and Samuelson, Lars and Seifert, Werner},
  issn         = {0003-6951},
  language     = {eng},
  number       = {9},
  pages        = {1881--1883},
  publisher    = {American Institute of Physics},
  series       = {Applied Physics Letters},
  title        = {Unidirectional electron flow in a nanometer-scale semiconductor channel: A self-switching device},
  url          = {http://dx.doi.org/10.1063/1.1606881},
  volume       = {83},
  year         = {2003},
}