Unidirectional electron flow in a nanometer-scale semiconductor channel: A self-switching device
(2003) In Applied Physics Letters 83(9). p.1881-1883- Abstract
- By tailoring the boundary of a narrow semiconductor channel to break its symmetry, we have realized a type of nanometer-scale nonlinear device, which we refer to as self-switching device (SSD). An applied voltage V not only changes the potential profile along the channel direction, but also either widens or narrows the effective channel depending on the sign of V. This results in a diode-like characteristic but without the use of any doping junction or barrier structure. The turn-on voltage can also be widely tuned from virtually zero to more than 10 V, by simply adjusting the channel width. The planar and two-terminal structure of the SSD also allows SSD-based circuits to be realized by only one step of lithography. (C) 2003 American... (More)
- By tailoring the boundary of a narrow semiconductor channel to break its symmetry, we have realized a type of nanometer-scale nonlinear device, which we refer to as self-switching device (SSD). An applied voltage V not only changes the potential profile along the channel direction, but also either widens or narrows the effective channel depending on the sign of V. This results in a diode-like characteristic but without the use of any doping junction or barrier structure. The turn-on voltage can also be widely tuned from virtually zero to more than 10 V, by simply adjusting the channel width. The planar and two-terminal structure of the SSD also allows SSD-based circuits to be realized by only one step of lithography. (C) 2003 American Institute of Physics. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/302348
- author
- Song, Aimin LU ; Missous, M ; Omling, Pär LU ; Peaker, AR ; Samuelson, Lars LU and Seifert, Werner LU
- organization
- publishing date
- 2003
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Applied Physics Letters
- volume
- 83
- issue
- 9
- pages
- 1881 - 1883
- publisher
- American Institute of Physics (AIP)
- external identifiers
-
- wos:000184992000065
- scopus:0141634015
- ISSN
- 0003-6951
- DOI
- 10.1063/1.1606881
- language
- English
- LU publication?
- yes
- id
- 6175f1c0-b182-4245-bf16-877d13b2f35e (old id 302348)
- date added to LUP
- 2016-04-01 12:32:59
- date last changed
- 2022-03-29 02:24:38
@article{6175f1c0-b182-4245-bf16-877d13b2f35e,
abstract = {{By tailoring the boundary of a narrow semiconductor channel to break its symmetry, we have realized a type of nanometer-scale nonlinear device, which we refer to as self-switching device (SSD). An applied voltage V not only changes the potential profile along the channel direction, but also either widens or narrows the effective channel depending on the sign of V. This results in a diode-like characteristic but without the use of any doping junction or barrier structure. The turn-on voltage can also be widely tuned from virtually zero to more than 10 V, by simply adjusting the channel width. The planar and two-terminal structure of the SSD also allows SSD-based circuits to be realized by only one step of lithography. (C) 2003 American Institute of Physics.}},
author = {{Song, Aimin and Missous, M and Omling, Pär and Peaker, AR and Samuelson, Lars and Seifert, Werner}},
issn = {{0003-6951}},
language = {{eng}},
number = {{9}},
pages = {{1881--1883}},
publisher = {{American Institute of Physics (AIP)}},
series = {{Applied Physics Letters}},
title = {{Unidirectional electron flow in a nanometer-scale semiconductor channel: A self-switching device}},
url = {{http://dx.doi.org/10.1063/1.1606881}},
doi = {{10.1063/1.1606881}},
volume = {{83}},
year = {{2003}},
}