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Demonstration of Defect-Free and Composition Tunable Ga(x)In(1-x)Sb Nanowires.

Gorji, Sepideh LU ; Ek, Martin LU orcid ; Ganjipour, Bahram LU ; Thelander, Claes LU ; Johansson, Jonas LU orcid ; Caroff, Philippe LU and Dick Thelander, Kimberly LU (2012) In Nano Letters 12(9). p.4914-4919
Abstract
The Ga(x)In(1-x)Sb ternary system has many interesting material properties, such as high carrier mobilities and a tunable range of bandgaps in the infrared. Here we present the first report on the growth and compositional control of Ga(x)In(1-x)Sb material grown in the form of nanowires from Au seeded nanoparticles by metalorganic vapor phase epitaxy. The composition of the grown Ga(x)In(1-x)Sb nanowires is precisely controlled by tuning the growth parameters where x varies from 1 to ∼0.3. Interestingly, the growth rate of the Ga(x)In(1-x)Sb nanowires increases with diameter, which we model based on the Gibbs-Thomson effect. Nanowire morphology can be tuned from high to very low aspect ratios, with perfect zinc blende crystal structure... (More)
The Ga(x)In(1-x)Sb ternary system has many interesting material properties, such as high carrier mobilities and a tunable range of bandgaps in the infrared. Here we present the first report on the growth and compositional control of Ga(x)In(1-x)Sb material grown in the form of nanowires from Au seeded nanoparticles by metalorganic vapor phase epitaxy. The composition of the grown Ga(x)In(1-x)Sb nanowires is precisely controlled by tuning the growth parameters where x varies from 1 to ∼0.3. Interestingly, the growth rate of the Ga(x)In(1-x)Sb nanowires increases with diameter, which we model based on the Gibbs-Thomson effect. Nanowire morphology can be tuned from high to very low aspect ratios, with perfect zinc blende crystal structure regardless of composition. Finally, electrical characterization on nanowire material with a composition of Ga(0.6)In(0.4)Sb showed clear p-type behavior. (Less)
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author
; ; ; ; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
nanowire, III-V semiconductor, antimonide, GaInSb, zinc blende, structure, MOSFET
in
Nano Letters
volume
12
issue
9
pages
4914 - 4919
publisher
The American Chemical Society (ACS)
external identifiers
  • wos:000308576000082
  • pmid:22924832
  • scopus:84866309982
  • pmid:22924832
ISSN
1530-6992
DOI
10.1021/nl302497r
language
English
LU publication?
yes
additional info
The information about affiliations in this record was updated in December 2015. The record was previously connected to the following departments: Solid State Physics (011013006), Polymer and Materials Chemistry (LTH) (011001041)
id
3ba96547-fdc4-44eb-8878-a51887a68274 (old id 3047153)
date added to LUP
2016-04-01 14:32:18
date last changed
2023-11-13 08:52:46
@article{3ba96547-fdc4-44eb-8878-a51887a68274,
  abstract     = {{The Ga(x)In(1-x)Sb ternary system has many interesting material properties, such as high carrier mobilities and a tunable range of bandgaps in the infrared. Here we present the first report on the growth and compositional control of Ga(x)In(1-x)Sb material grown in the form of nanowires from Au seeded nanoparticles by metalorganic vapor phase epitaxy. The composition of the grown Ga(x)In(1-x)Sb nanowires is precisely controlled by tuning the growth parameters where x varies from 1 to ∼0.3. Interestingly, the growth rate of the Ga(x)In(1-x)Sb nanowires increases with diameter, which we model based on the Gibbs-Thomson effect. Nanowire morphology can be tuned from high to very low aspect ratios, with perfect zinc blende crystal structure regardless of composition. Finally, electrical characterization on nanowire material with a composition of Ga(0.6)In(0.4)Sb showed clear p-type behavior.}},
  author       = {{Gorji, Sepideh and Ek, Martin and Ganjipour, Bahram and Thelander, Claes and Johansson, Jonas and Caroff, Philippe and Dick Thelander, Kimberly}},
  issn         = {{1530-6992}},
  keywords     = {{nanowire; III-V semiconductor; antimonide; GaInSb; zinc blende; structure; MOSFET}},
  language     = {{eng}},
  number       = {{9}},
  pages        = {{4914--4919}},
  publisher    = {{The American Chemical Society (ACS)}},
  series       = {{Nano Letters}},
  title        = {{Demonstration of Defect-Free and Composition Tunable Ga(x)In(1-x)Sb Nanowires.}},
  url          = {{http://dx.doi.org/10.1021/nl302497r}},
  doi          = {{10.1021/nl302497r}},
  volume       = {{12}},
  year         = {{2012}},
}