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Demonstration of Defect-Free and Composition Tunable Ga(x)In(1-x)Sb Nanowires.

Gorji, Sepideh LU ; Ek, Martin LU ; Ganjipour, Bahram LU ; Thelander, Claes LU ; Johansson, Jonas LU ; Caroff, Philippe LU and Dick Thelander, Kimberly LU (2012) In Nano Letters 12(9). p.4914-4919
Abstract
The Ga(x)In(1-x)Sb ternary system has many interesting material properties, such as high carrier mobilities and a tunable range of bandgaps in the infrared. Here we present the first report on the growth and compositional control of Ga(x)In(1-x)Sb material grown in the form of nanowires from Au seeded nanoparticles by metalorganic vapor phase epitaxy. The composition of the grown Ga(x)In(1-x)Sb nanowires is precisely controlled by tuning the growth parameters where x varies from 1 to ∼0.3. Interestingly, the growth rate of the Ga(x)In(1-x)Sb nanowires increases with diameter, which we model based on the Gibbs-Thomson effect. Nanowire morphology can be tuned from high to very low aspect ratios, with perfect zinc blende crystal structure... (More)
The Ga(x)In(1-x)Sb ternary system has many interesting material properties, such as high carrier mobilities and a tunable range of bandgaps in the infrared. Here we present the first report on the growth and compositional control of Ga(x)In(1-x)Sb material grown in the form of nanowires from Au seeded nanoparticles by metalorganic vapor phase epitaxy. The composition of the grown Ga(x)In(1-x)Sb nanowires is precisely controlled by tuning the growth parameters where x varies from 1 to ∼0.3. Interestingly, the growth rate of the Ga(x)In(1-x)Sb nanowires increases with diameter, which we model based on the Gibbs-Thomson effect. Nanowire morphology can be tuned from high to very low aspect ratios, with perfect zinc blende crystal structure regardless of composition. Finally, electrical characterization on nanowire material with a composition of Ga(0.6)In(0.4)Sb showed clear p-type behavior. (Less)
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
nanowire, III-V semiconductor, antimonide, GaInSb, zinc blende, structure, MOSFET
in
Nano Letters
volume
12
issue
9
pages
4914 - 4919
publisher
The American Chemical Society
external identifiers
  • wos:000308576000082
  • pmid:22924832
  • scopus:84866309982
ISSN
1530-6992
DOI
10.1021/nl302497r
language
English
LU publication?
yes
id
3ba96547-fdc4-44eb-8878-a51887a68274 (old id 3047153)
date added to LUP
2012-09-13 08:48:34
date last changed
2017-11-19 03:57:28
@article{3ba96547-fdc4-44eb-8878-a51887a68274,
  abstract     = {The Ga(x)In(1-x)Sb ternary system has many interesting material properties, such as high carrier mobilities and a tunable range of bandgaps in the infrared. Here we present the first report on the growth and compositional control of Ga(x)In(1-x)Sb material grown in the form of nanowires from Au seeded nanoparticles by metalorganic vapor phase epitaxy. The composition of the grown Ga(x)In(1-x)Sb nanowires is precisely controlled by tuning the growth parameters where x varies from 1 to ∼0.3. Interestingly, the growth rate of the Ga(x)In(1-x)Sb nanowires increases with diameter, which we model based on the Gibbs-Thomson effect. Nanowire morphology can be tuned from high to very low aspect ratios, with perfect zinc blende crystal structure regardless of composition. Finally, electrical characterization on nanowire material with a composition of Ga(0.6)In(0.4)Sb showed clear p-type behavior.},
  author       = {Gorji, Sepideh and Ek, Martin and Ganjipour, Bahram and Thelander, Claes and Johansson, Jonas and Caroff, Philippe and Dick Thelander, Kimberly},
  issn         = {1530-6992},
  keyword      = {nanowire,III-V semiconductor,antimonide,GaInSb,zinc blende,structure,MOSFET},
  language     = {eng},
  number       = {9},
  pages        = {4914--4919},
  publisher    = {The American Chemical Society},
  series       = {Nano Letters},
  title        = {Demonstration of Defect-Free and Composition Tunable Ga(x)In(1-x)Sb Nanowires.},
  url          = {http://dx.doi.org/10.1021/nl302497r},
  volume       = {12},
  year         = {2012},
}