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Lift-off process for nanoimprint lithography

Carlberg, Patrick LU ; Graczyk, Mariusz LU ; Sarwe, Eva-Lena LU ; Maximov, Ivan LU ; Beck, Marc LU and Montelius, Lars LU (2003) 28th International Conference on Micro- and Nano-Engineering, 2002 67-8. p.203-207
Abstract
We report a novel a lift-off method for nanoimprint lithography. This is a bi-layer method, using a polymethyl methacrylate (PMMA) on lift-off layer (LOL) resist scheme. For the imprint step, direct evidence for good pattern transfer down to 20 nm is shown. Oxygen plasma ashing is required to remove residual PMMA. A liquid solvent, MF 319, is used to transfer the pattern down to the silicon. The LOL is dissolved isotropically while the PMMA is unaffected. Ashing time can kept to a minimum through the wet etch method. This reduces the line widening effect. After metal evaporation a two-step lift-off process prevents metal flakes from adhering to the surface electrostatically. At first warm acetone breakes apart the metal layer and dissolves... (More)
We report a novel a lift-off method for nanoimprint lithography. This is a bi-layer method, using a polymethyl methacrylate (PMMA) on lift-off layer (LOL) resist scheme. For the imprint step, direct evidence for good pattern transfer down to 20 nm is shown. Oxygen plasma ashing is required to remove residual PMMA. A liquid solvent, MF 319, is used to transfer the pattern down to the silicon. The LOL is dissolved isotropically while the PMMA is unaffected. Ashing time can kept to a minimum through the wet etch method. This reduces the line widening effect. After metal evaporation a two-step lift-off process prevents metal flakes from adhering to the surface electrostatically. At first warm acetone breakes apart the metal layer and dissolves the PMMA, then warm Remover S-1165 removes the LOL and remaining metal. Structures of lines down to 50 nm and dots with a diameter of sub 20 nm are presented. (Less)
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author
; ; ; ; and
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
keywords
lift off method, nanoimprint lithography, polymethyl methacrylate, PMMA, pattern transfer, oxygen plasma, liquid solvent, silicon, wet etch method, metal evaporation, 50 nm, 20 nm, SiO2, Au, surface adhesion, metal flakes, acetone, dissolution, bilayer method, metal layer, line widening effect
host publication
Microelectronic Engineering
volume
67-8
pages
5 pages
publisher
Elsevier
conference name
28th International Conference on Micro- and Nano-Engineering, 2002
conference location
Lugano, Switzerland
conference dates
2002-09-16 - 2002-09-19
external identifiers
  • wos:000183842100028
  • scopus:0038697354
ISSN
1873-5568
0167-9317
DOI
10.1016/S0167-9317(03)00072-8
language
English
LU publication?
yes
id
e141b111-999f-45f3-90ce-a51f6d3636bb (old id 307050)
date added to LUP
2016-04-01 12:11:27
date last changed
2024-06-04 11:13:19
@inproceedings{e141b111-999f-45f3-90ce-a51f6d3636bb,
  abstract     = {{We report a novel a lift-off method for nanoimprint lithography. This is a bi-layer method, using a polymethyl methacrylate (PMMA) on lift-off layer (LOL) resist scheme. For the imprint step, direct evidence for good pattern transfer down to 20 nm is shown. Oxygen plasma ashing is required to remove residual PMMA. A liquid solvent, MF 319, is used to transfer the pattern down to the silicon. The LOL is dissolved isotropically while the PMMA is unaffected. Ashing time can kept to a minimum through the wet etch method. This reduces the line widening effect. After metal evaporation a two-step lift-off process prevents metal flakes from adhering to the surface electrostatically. At first warm acetone breakes apart the metal layer and dissolves the PMMA, then warm Remover S-1165 removes the LOL and remaining metal. Structures of lines down to 50 nm and dots with a diameter of sub 20 nm are presented.}},
  author       = {{Carlberg, Patrick and Graczyk, Mariusz and Sarwe, Eva-Lena and Maximov, Ivan and Beck, Marc and Montelius, Lars}},
  booktitle    = {{Microelectronic Engineering}},
  issn         = {{1873-5568}},
  keywords     = {{lift off method; nanoimprint lithography; polymethyl methacrylate; PMMA; pattern transfer; oxygen plasma; liquid solvent; silicon; wet etch method; metal evaporation; 50 nm; 20 nm; SiO2; Au; surface adhesion; metal flakes; acetone; dissolution; bilayer method; metal layer; line widening effect}},
  language     = {{eng}},
  pages        = {{203--207}},
  publisher    = {{Elsevier}},
  title        = {{Lift-off process for nanoimprint lithography}},
  url          = {{http://dx.doi.org/10.1016/S0167-9317(03)00072-8}},
  doi          = {{10.1016/S0167-9317(03)00072-8}},
  volume       = {{67-8}},
  year         = {{2003}},
}