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Highly functional tunnelling devices integrated in 3D

Wernersson, Lars-Erik LU ; Lind, Erik LU ; Lindström, Peter LU and Andreani, Pietro LU (2003) In International Journal of Circuit Theory and Applications 31(1). p.105-117
Abstract
We present a new technology for integrating tunnelling devices in three dimensions. These devices are fabricated by the combination of the growth of semiconductor heterostructures with the controlled introduction of metallic elements into an epitaxial layer by an overgrowth technique. First, we use a new type of tunnelling transistor, namely a resonant-tunnelling permeable base transistor. A simple model based on a piece-wise linear approximation is used in Cadence to describe the current-voltage characteristics of the transistor. This model is further introduced into a small signal equivalent circuit in order to optimize the performance of the device. In addition to the tunnelling structure below the grating, these transistors may be... (More)
We present a new technology for integrating tunnelling devices in three dimensions. These devices are fabricated by the combination of the growth of semiconductor heterostructures with the controlled introduction of metallic elements into an epitaxial layer by an overgrowth technique. First, we use a new type of tunnelling transistor, namely a resonant-tunnelling permeable base transistor. A simple model based on a piece-wise linear approximation is used in Cadence to describe the current-voltage characteristics of the transistor. This model is further introduced into a small signal equivalent circuit in order to optimize the performance of the device. In addition to the tunnelling structure below the grating, these transistors may be integrated in 3D by the introduction of another tunnelling structure directly over the metal grating. In the integrated device structure, the gate acts simultaneously on both tunnelling structures and the obtained characteristics are the result of the interplay between the two tunnelling structures and the gate. An equivalent circuit model is developed and we show how this interaction influences the current-voltage characteristics. The gate may be used to adjust the peak voltage of certain peaks in a controlled fashion, which creates a highly functional tunnelling device. These results show the need for a strong interaction between the development of circuit models and processing technology to develop new nano-electronic devices and circuits. (Less)
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
MOVPE, W/GaAs, resonant tunnelling, tunnelling transistor
in
International Journal of Circuit Theory and Applications
volume
31
issue
1
pages
105 - 117
publisher
John Wiley & Sons
external identifiers
  • wos:000180748400010
  • scopus:0037268774
ISSN
1097-007X
DOI
10.1002/cta.228
language
English
LU publication?
yes
id
e7d17c41-a902-4d87-9a73-f4eb9e8c09ed (old id 319341)
alternative location
http://www3.interscience.wiley.com/cgi-bin/fulltext/102524215/PDFSTART
date added to LUP
2007-09-24 08:01:48
date last changed
2018-01-07 05:18:53
@article{e7d17c41-a902-4d87-9a73-f4eb9e8c09ed,
  abstract     = {We present a new technology for integrating tunnelling devices in three dimensions. These devices are fabricated by the combination of the growth of semiconductor heterostructures with the controlled introduction of metallic elements into an epitaxial layer by an overgrowth technique. First, we use a new type of tunnelling transistor, namely a resonant-tunnelling permeable base transistor. A simple model based on a piece-wise linear approximation is used in Cadence to describe the current-voltage characteristics of the transistor. This model is further introduced into a small signal equivalent circuit in order to optimize the performance of the device. In addition to the tunnelling structure below the grating, these transistors may be integrated in 3D by the introduction of another tunnelling structure directly over the metal grating. In the integrated device structure, the gate acts simultaneously on both tunnelling structures and the obtained characteristics are the result of the interplay between the two tunnelling structures and the gate. An equivalent circuit model is developed and we show how this interaction influences the current-voltage characteristics. The gate may be used to adjust the peak voltage of certain peaks in a controlled fashion, which creates a highly functional tunnelling device. These results show the need for a strong interaction between the development of circuit models and processing technology to develop new nano-electronic devices and circuits.},
  author       = {Wernersson, Lars-Erik and Lind, Erik and Lindström, Peter and Andreani, Pietro},
  issn         = {1097-007X},
  keyword      = {MOVPE,W/GaAs,resonant tunnelling,tunnelling transistor},
  language     = {eng},
  number       = {1},
  pages        = {105--117},
  publisher    = {John Wiley & Sons},
  series       = {International Journal of Circuit Theory and Applications},
  title        = {Highly functional tunnelling devices integrated in 3D},
  url          = {http://dx.doi.org/10.1002/cta.228},
  volume       = {31},
  year         = {2003},
}