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Site control of InAs quantum dots on a patterned InP surface: As/P exchange reactions

Borgström, Magnus LU ; Bryllert, Tomas LU ; Sass, T; Wernersson, Lars-Erik LU ; Samuelson, Lars LU and Seifert, Werner LU (2003) In Journal of Crystal Growth 248. p.310-316
Abstract
In this paper. we present the effect of annealing temperature and annealing time on InAs site-controlled quantum dot growth. Individual InAs quantum dots formed by self-assembling have been positioned into holes, created by partial overgrowth of electron beam induced nano-carbon deposits by metal organic vapor phase epitaxy. As/P exchange reactions produce material sufficient for selective dot nucleation in the holes. Results. showing that As/P exchange reactions occur even when capping the dots with InP are presented. (C) 2002 Elsevier Science B.V. All rights reserved.
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
nanomaterials, nanostructures, metalorganic vapor phase epitaxy, semiconducting IIIV materials
in
Journal of Crystal Growth
volume
248
pages
310 - 316
publisher
Elsevier
external identifiers
  • wos:000180446900056
  • scopus:0037292510
ISSN
0022-0248
DOI
10.1016/S0022-0248(02)01817-1
language
English
LU publication?
yes
id
5257d6d8-31bd-42d1-a676-6769dccad5a3 (old id 319801)
date added to LUP
2007-08-24 15:33:16
date last changed
2018-10-03 11:51:49
@article{5257d6d8-31bd-42d1-a676-6769dccad5a3,
  abstract     = {In this paper. we present the effect of annealing temperature and annealing time on InAs site-controlled quantum dot growth. Individual InAs quantum dots formed by self-assembling have been positioned into holes, created by partial overgrowth of electron beam induced nano-carbon deposits by metal organic vapor phase epitaxy. As/P exchange reactions produce material sufficient for selective dot nucleation in the holes. Results. showing that As/P exchange reactions occur even when capping the dots with InP are presented. (C) 2002 Elsevier Science B.V. All rights reserved.},
  author       = {Borgström, Magnus and Bryllert, Tomas and Sass, T and Wernersson, Lars-Erik and Samuelson, Lars and Seifert, Werner},
  issn         = {0022-0248},
  keyword      = {nanomaterials,nanostructures,metalorganic vapor phase epitaxy,semiconducting IIIV materials},
  language     = {eng},
  pages        = {310--316},
  publisher    = {Elsevier},
  series       = {Journal of Crystal Growth},
  title        = {Site control of InAs quantum dots on a patterned InP surface: As/P exchange reactions},
  url          = {http://dx.doi.org/10.1016/S0022-0248(02)01817-1},
  volume       = {248},
  year         = {2003},
}