Site control of InAs quantum dots on a patterned InP surface: As/P exchange reactions
(2003) In Journal of Crystal Growth 248. p.310-316- Abstract
- In this paper. we present the effect of annealing temperature and annealing time on InAs site-controlled quantum dot growth. Individual InAs quantum dots formed by self-assembling have been positioned into holes, created by partial overgrowth of electron beam induced nano-carbon deposits by metal organic vapor phase epitaxy. As/P exchange reactions produce material sufficient for selective dot nucleation in the holes. Results. showing that As/P exchange reactions occur even when capping the dots with InP are presented. (C) 2002 Elsevier Science B.V. All rights reserved.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/319801
- author
- Borgström, Magnus LU ; Bryllert, Tomas LU ; Sass, T ; Wernersson, Lars-Erik LU ; Samuelson, Lars LU and Seifert, Werner LU
- organization
- publishing date
- 2003
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- nanomaterials, nanostructures, metalorganic vapor phase epitaxy, semiconducting IIIV materials
- in
- Journal of Crystal Growth
- volume
- 248
- pages
- 310 - 316
- publisher
- Elsevier
- external identifiers
-
- wos:000180446900056
- scopus:0037292510
- ISSN
- 0022-0248
- DOI
- 10.1016/S0022-0248(02)01817-1
- language
- English
- LU publication?
- yes
- id
- 5257d6d8-31bd-42d1-a676-6769dccad5a3 (old id 319801)
- date added to LUP
- 2016-04-01 15:47:43
- date last changed
- 2022-02-20 01:08:38
@article{5257d6d8-31bd-42d1-a676-6769dccad5a3, abstract = {{In this paper. we present the effect of annealing temperature and annealing time on InAs site-controlled quantum dot growth. Individual InAs quantum dots formed by self-assembling have been positioned into holes, created by partial overgrowth of electron beam induced nano-carbon deposits by metal organic vapor phase epitaxy. As/P exchange reactions produce material sufficient for selective dot nucleation in the holes. Results. showing that As/P exchange reactions occur even when capping the dots with InP are presented. (C) 2002 Elsevier Science B.V. All rights reserved.}}, author = {{Borgström, Magnus and Bryllert, Tomas and Sass, T and Wernersson, Lars-Erik and Samuelson, Lars and Seifert, Werner}}, issn = {{0022-0248}}, keywords = {{nanomaterials; nanostructures; metalorganic vapor phase epitaxy; semiconducting IIIV materials}}, language = {{eng}}, pages = {{310--316}}, publisher = {{Elsevier}}, series = {{Journal of Crystal Growth}}, title = {{Site control of InAs quantum dots on a patterned InP surface: As/P exchange reactions}}, url = {{http://dx.doi.org/10.1016/S0022-0248(02)01817-1}}, doi = {{10.1016/S0022-0248(02)01817-1}}, volume = {{248}}, year = {{2003}}, }