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Processing and characterization of large area InP nanowire photovoltaic devices

Alcer, David LU orcid ; Hrachowina, Lukas LU ; Hessman, Dan LU and Borgström, Magnus T. LU (2023) In Nanotechnology 34(29).
Abstract

III−V nanowire (NW) photovoltaic devices promise high efficiencies at reduced materials usage. However, research has so far focused on small devices, mostly ≤1 mm2. In this study, the upscaling potential of axial junction InP NW photovoltaic devices is investigated. Device processing was carried out on a full 2″ wafer, with device sizes up to 1 cm2, which is a significant increase from the mm-scale III−V NW photovoltaic devices published previously. The short-circuit current density of the largest 1 cm2 devices, in which 460 million NWs are contacted in parallel, is on par with smaller devices. This enables a record power generation of 6.0 mW under AM1.5 G illumination, more than one order of magnitude... (More)

III−V nanowire (NW) photovoltaic devices promise high efficiencies at reduced materials usage. However, research has so far focused on small devices, mostly ≤1 mm2. In this study, the upscaling potential of axial junction InP NW photovoltaic devices is investigated. Device processing was carried out on a full 2″ wafer, with device sizes up to 1 cm2, which is a significant increase from the mm-scale III−V NW photovoltaic devices published previously. The short-circuit current density of the largest 1 cm2 devices, in which 460 million NWs are contacted in parallel, is on par with smaller devices. This enables a record power generation of 6.0 mW under AM1.5 G illumination, more than one order of magnitude higher than previous III−V NW photovoltaic devices. On the other hand, the fill factor of the larger devices is lower in comparison with smaller devices, which affects the device efficiency. By use of electroluminescence mapping, resistive losses in the indium tin oxide (ITO) front contact are found to limit the fill factor of the large devices. We use combined light-beam induced current (LBIC) and photoluminescence (PL) mapping as a powerful characterization tool for NW photovoltaic devices. From the LBIC and PL maps, local defects can be identified on the fully processed devices.

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author
; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
InP, light-beam induced current (LBIC), nanowire photovoltaics, photoluminescence (PL) mapping
in
Nanotechnology
volume
34
issue
29
article number
295402
publisher
IOP Publishing
external identifiers
  • pmid:37044082
  • scopus:85158863291
ISSN
0957-4484
DOI
10.1088/1361-6528/accc37
language
English
LU publication?
yes
id
31d12358-e72a-4aea-830f-fc9cba90967a
date added to LUP
2023-08-10 10:55:21
date last changed
2024-04-20 00:15:52
@article{31d12358-e72a-4aea-830f-fc9cba90967a,
  abstract     = {{<p>III−V nanowire (NW) photovoltaic devices promise high efficiencies at reduced materials usage. However, research has so far focused on small devices, mostly ≤1 mm<sup>2</sup>. In this study, the upscaling potential of axial junction InP NW photovoltaic devices is investigated. Device processing was carried out on a full 2″ wafer, with device sizes up to 1 cm<sup>2</sup>, which is a significant increase from the mm-scale III−V NW photovoltaic devices published previously. The short-circuit current density of the largest 1 cm<sup>2</sup> devices, in which 460 million NWs are contacted in parallel, is on par with smaller devices. This enables a record power generation of 6.0 mW under AM1.5 G illumination, more than one order of magnitude higher than previous III−V NW photovoltaic devices. On the other hand, the fill factor of the larger devices is lower in comparison with smaller devices, which affects the device efficiency. By use of electroluminescence mapping, resistive losses in the indium tin oxide (ITO) front contact are found to limit the fill factor of the large devices. We use combined light-beam induced current (LBIC) and photoluminescence (PL) mapping as a powerful characterization tool for NW photovoltaic devices. From the LBIC and PL maps, local defects can be identified on the fully processed devices.</p>}},
  author       = {{Alcer, David and Hrachowina, Lukas and Hessman, Dan and Borgström, Magnus T.}},
  issn         = {{0957-4484}},
  keywords     = {{InP; light-beam induced current (LBIC); nanowire photovoltaics; photoluminescence (PL) mapping}},
  language     = {{eng}},
  month        = {{07}},
  number       = {{29}},
  publisher    = {{IOP Publishing}},
  series       = {{Nanotechnology}},
  title        = {{Processing and characterization of large area InP nanowire photovoltaic devices}},
  url          = {{http://dx.doi.org/10.1088/1361-6528/accc37}},
  doi          = {{10.1088/1361-6528/accc37}},
  volume       = {{34}},
  year         = {{2023}},
}