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Schottky barrier height studies of Au/4H-SiC(0001) using photoemission and synchrotron radiation

Virojanadara, C; Glans, RA; Thiagarajan, Balasubramanian LU ; Johansson, LI; Macak, EB; Wahab, Q and Madsen, LD (2002) In Journal of Electronic Materials 31(12). p.1353-1356
Abstract
The Schottky barrier height (SBH) of Au on 4H-SiC(0001) has been studied using photoemission and synchrotron radiation. The Au was deposited in-situ on clean and well-ordered root3 X roots R30degrees reconstructed SiC surfaces prepared by in situ heating at similar to950degreesC. The SBH was determined from the shift observed in the Si 2p core level, in addition to the initial band bending determined for the clean surface. The results were compared with values obtained by electrical, capacitance-voltage (C-V), and current-voltage (I-V) characterization methods. A favorable comparison between the three independent, SBH determination methods was found.
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
surface treatment, silicon carbide, contacts, Schottky barriers, Au/SiC, photoemission, capacitance-voltage, current-voltage
in
Journal of Electronic Materials
volume
31
issue
12
pages
1353 - 1356
publisher
Springer
external identifiers
  • wos:000179825600009
  • scopus:0036918159
ISSN
0361-5235
DOI
10.1007/s11664-002-0121-8
language
English
LU publication?
yes
id
2e68086d-64d0-4817-affc-6010ac1d11e7 (old id 321644)
date added to LUP
2007-11-16 14:01:32
date last changed
2017-01-01 04:19:54
@article{2e68086d-64d0-4817-affc-6010ac1d11e7,
  abstract     = {The Schottky barrier height (SBH) of Au on 4H-SiC(0001) has been studied using photoemission and synchrotron radiation. The Au was deposited in-situ on clean and well-ordered root3 X roots R30degrees reconstructed SiC surfaces prepared by in situ heating at similar to950degreesC. The SBH was determined from the shift observed in the Si 2p core level, in addition to the initial band bending determined for the clean surface. The results were compared with values obtained by electrical, capacitance-voltage (C-V), and current-voltage (I-V) characterization methods. A favorable comparison between the three independent, SBH determination methods was found.},
  author       = {Virojanadara, C and Glans, RA and Thiagarajan, Balasubramanian and Johansson, LI and Macak, EB and Wahab, Q and Madsen, LD},
  issn         = {0361-5235},
  keyword      = {surface treatment,silicon carbide,contacts,Schottky barriers,Au/SiC,photoemission,capacitance-voltage,current-voltage},
  language     = {eng},
  number       = {12},
  pages        = {1353--1356},
  publisher    = {Springer},
  series       = {Journal of Electronic Materials},
  title        = {Schottky barrier height studies of Au/4H-SiC(0001) using photoemission and synchrotron radiation},
  url          = {http://dx.doi.org/10.1007/s11664-002-0121-8},
  volume       = {31},
  year         = {2002},
}