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Nanoimprint lithography for fabrication of three-terminal ballistic junctions in InP/GaInAs

Maximov, Ivan LU ; Carlberg, Patrick LU ; Wallin, Daniel LU ; Shorubalko, Ivan LU ; Seifert, Werner LU ; Xu, Hongqi LU ; Montelius, Lars LU and Samuelson, Lars LU (2002) In Nanotechnology 13(5). p.666-668
Abstract
We present processing technology and characterization results for InP/GaInAs two-dimensional electron gas (2DEG) three-terminal ballistic junction (TBJ) devices manufactured using nanoimprint lithography (NIL). To transfer sub-100 nm features into a high-mobility InP-based 2DEG material, we used SiO2/Si stamps made using electron beam lithography and reactive ion etching. After NIL, the resist residues are removed in oxygen plasma; this is followed by wet etching of InP/GaInAs to define the TBJ structures. Fabricated TBJ devices are characterized using scanning electron microscopy and electron transport measurements. Highly non-linear electrical characteristics as predicted by the theory (Xu H Q 2001 APPI. Phys. Lett. 78 2064) are... (More)
We present processing technology and characterization results for InP/GaInAs two-dimensional electron gas (2DEG) three-terminal ballistic junction (TBJ) devices manufactured using nanoimprint lithography (NIL). To transfer sub-100 nm features into a high-mobility InP-based 2DEG material, we used SiO2/Si stamps made using electron beam lithography and reactive ion etching. After NIL, the resist residues are removed in oxygen plasma; this is followed by wet etching of InP/GaInAs to define the TBJ structures. Fabricated TBJ devices are characterized using scanning electron microscopy and electron transport measurements. Highly non-linear electrical characteristics as predicted by the theory (Xu H Q 2001 APPI. Phys. Lett. 78 2064) are demonstrated. (Less)
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Nanotechnology
volume
13
issue
5
pages
666 - 668
publisher
IOP Publishing
external identifiers
  • wos:000179070200027
  • scopus:0036801415
ISSN
0957-4484
DOI
10.1088/0957-4484/13/5/325
language
English
LU publication?
yes
id
f6fbdbfd-ac3c-47af-b852-cd6cc2764798 (old id 324398)
date added to LUP
2007-11-16 14:48:10
date last changed
2017-01-01 04:42:51
@article{f6fbdbfd-ac3c-47af-b852-cd6cc2764798,
  abstract     = {We present processing technology and characterization results for InP/GaInAs two-dimensional electron gas (2DEG) three-terminal ballistic junction (TBJ) devices manufactured using nanoimprint lithography (NIL). To transfer sub-100 nm features into a high-mobility InP-based 2DEG material, we used SiO2/Si stamps made using electron beam lithography and reactive ion etching. After NIL, the resist residues are removed in oxygen plasma; this is followed by wet etching of InP/GaInAs to define the TBJ structures. Fabricated TBJ devices are characterized using scanning electron microscopy and electron transport measurements. Highly non-linear electrical characteristics as predicted by the theory (Xu H Q 2001 APPI. Phys. Lett. 78 2064) are demonstrated.},
  author       = {Maximov, Ivan and Carlberg, Patrick and Wallin, Daniel and Shorubalko, Ivan and Seifert, Werner and Xu, Hongqi and Montelius, Lars and Samuelson, Lars},
  issn         = {0957-4484},
  language     = {eng},
  number       = {5},
  pages        = {666--668},
  publisher    = {IOP Publishing},
  series       = {Nanotechnology},
  title        = {Nanoimprint lithography for fabrication of three-terminal ballistic junctions in InP/GaInAs},
  url          = {http://dx.doi.org/10.1088/0957-4484/13/5/325},
  volume       = {13},
  year         = {2002},
}